公开(公告)号：US10266963B2

公开(公告)日：2019-04-23

申请号：US14168517

申请日：2014-01-30

申请人： Neeraj Nepal ,  Virginia D. Wheeler ,  Charles R. Eddy, Jr. ,  Francis J. Kub ,  Travis J. Anderson ,  Michael A. Mastro ,  Rachael L. Myers-Ward ,  Sandra C. Hangarter

发明人： Neeraj Nepal ,  Virginia D. Wheeler ,  Charles R. Eddy, Jr. ,  Francis J. Kub ,  Travis J. Anderson ,  Michael A. Mastro ,  Rachael L. Myers-Ward ,  Sandra C. Hangarter

IPC分类号： B32B9/00 ,  C30B25/18 ,  C30B29/40 ,  C30B29/48

摘要： A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.

公开(公告)号：US09111786B1

公开(公告)日：2015-08-18

申请号：US14578146

申请日：2014-12-19

申请人： Francis J. Kub ,  Travis J. Anderson ,  Michael A. Mastro ,  Charles R. Eddy, Jr. ,  Jennifer K. Hite

发明人： Francis J. Kub ,  Travis J. Anderson ,  Michael A. Mastro ,  Charles R. Eddy, Jr. ,  Jennifer K. Hite

IPC分类号： H01L29/778 ,  H01L27/092 ,  H01L27/095 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205 ,  H01L29/04 ,  H01L29/36 ,  H01L29/78 ,  H01L29/66 ,  H01L21/335 ,  H01L21/8228 ,  H01L21/8238

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.

摘要翻译： 具有N沟道和P沟道III氮化物场效应晶体管的器件包括在第一氮极氮氮III氮化物材料上的非反相P沟道III-氮化物场效应晶体管，非反相N沟道 III-氮化物场效应晶体管，外延生长，第一III-氮化物阻挡层，二维空穴气体，第二III-氮化物阻挡层和二维空穴气体。 制造互补的非反相P沟道和非反相N沟道III氮化物FET的方法，其包括生长外延层，沉积氧化物，限定开口，外延生长第一氮极III-氮化物材料，缓冲层，背部阻挡层， 通道，间隔物，阻挡层和覆盖层，载流子增强层，沉积氧化物，生长AlN成核层/极性反转层，生长中的镓极性III-氮化物，包括外延层，沉积电介质，制造P沟道III-氮化物FET ，并制造N沟道III型氮化物FET。

公开(公告)号：US09105499B1

公开(公告)日：2015-08-11

申请号：US14666494

申请日：2015-03-24

申请人： Francis J. Kub ,  Travis J. Anderson ,  Michael A. Mastro ,  Charles R. Eddy, Jr. ,  Jennifer K. Hite

发明人： Francis J. Kub ,  Travis J. Anderson ,  Michael A. Mastro ,  Charles R. Eddy, Jr. ,  Jennifer K. Hite

IPC分类号： H01L29/778 ,  H01L27/092 ,  H01L21/335 ,  H01L21/8252 ,  H01L29/78 ,  H01L21/8228 ,  H01L29/66 ,  H01L29/205 ,  H01L29/20 ,  H01L21/8238

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.

摘要翻译： 具有互补非反相N沟道和反相P沟道场效应晶体管的器件，其包括在衬底上外延生长的层，第一III-氮化物外延层中的势垒层，二维电子气，第二III- 氮化物材料层和第二III-氮化物外延层中的二维空穴气体。 具有互补反向N沟道和非反相P沟道场效应晶体管的器件，其包括外延生长的氮极III-氮化物层，阻挡材料层，二维空穴气体和二维电子气 第二个III-氮化物外延层。 制造互补的反相P沟道和非反相N沟道III氮化物场效应晶体管的方法。 在衬底上制作互补的非反相P沟道场效应晶体管和反相N沟道III氮化物场效应晶体管的方法。

公开(公告)号：US09018056B2

公开(公告)日：2015-04-28

申请号：US14170161

申请日：2014-01-31

申请人： Francis J. Kub ,  Travis J. Anderson ,  Michael A. Mastro ,  Charles R. Eddy, Jr. ,  Jennifer K. Hite

发明人： Francis J. Kub ,  Travis J. Anderson ,  Michael A. Mastro ,  Charles R. Eddy, Jr. ,  Jennifer K. Hite

IPC分类号： H01L21/335 ,  H01L29/778 ,  H01L29/66 ,  H01L29/78 ,  H01L29/20 ,  H01L29/417 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.

公开(公告)号：US10256090B2

公开(公告)日：2019-04-09

申请号：US14204045

申请日：2014-03-11

申请人： Rachael L. Myers-Ward ,  David Kurt Gaskill ,  Charles R. Eddy, Jr. ,  Robert E. Stahlbush ,  Nadeemmullah A. Mahadik ,  Virginia D. Wheeler

发明人： Rachael L. Myers-Ward ,  David Kurt Gaskill ,  Charles R. Eddy, Jr. ,  Robert E. Stahlbush ,  Nadeemmullah A. Mahadik ,  Virginia D. Wheeler

IPC分类号： C03C15/00 ,  H01L21/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/36 ,  H01L29/16 ,  H01L21/3065

摘要： A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.

公开(公告)号：US10256094B2

公开(公告)日：2019-04-09

申请号：US14204015

申请日：2014-03-11

申请人： Rachael L. Myers-Ward ,  David Kurt Gaskill ,  Charles R. Eddy, Jr. ,  Robert E. Stahlbush ,  Nadeemmullah A. Mahadik ,  Virginia D. Wheeler

发明人： Rachael L. Myers-Ward ,  David Kurt Gaskill ,  Charles R. Eddy, Jr. ,  Robert E. Stahlbush ,  Nadeemmullah A. Mahadik ,  Virginia D. Wheeler

IPC分类号： B44C1/22 ,  H01L21/02 ,  C30B25/20 ,  C30B29/36 ,  C30B25/18 ,  H01L21/3065

摘要： A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.

公开(公告)号：US20140141580A1

公开(公告)日：2014-05-22

申请号：US14165602

申请日：2014-01-28

申请人： Francis J. Kub ,  Travis Anderson ,  Karl D. Hobart ,  Michael A. Mastro ,  Charles R. Eddy, Jr.

发明人： Francis J. Kub ,  Travis Anderson ,  Karl D. Hobart ,  Michael A. Mastro ,  Charles R. Eddy, Jr.

IPC分类号： H01L29/66

CPC分类号： H01L29/778 ,  H01L29/0847 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

摘要翻译： 提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。

公开(公告)号：US08900939B2

公开(公告)日：2014-12-02

申请号：US14165602

申请日：2014-01-28

申请人： Francis J. Kub ,  Travis Anderson ,  Karl D. Hobart ,  Michael A. Mastro ,  Charles R. Eddy, Jr.

发明人： Francis J. Kub ,  Travis Anderson ,  Karl D. Hobart ,  Michael A. Mastro ,  Charles R. Eddy, Jr.

IPC分类号： H01L21/335 ,  H01L29/66 ,  H01L29/778 ,  H01L29/08 ,  H01L29/205 ,  H01L29/423 ,  H01L29/20 ,  H01L29/40

CPC分类号： H01L29/778 ,  H01L29/0847 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

公开(公告)号：US08648390B2

公开(公告)日：2014-02-11

申请号：US13775309

申请日：2013-02-25

申请人： Francis J. Kub ,  Karl D. Hobart ,  Charles R. Eddy, Jr. ,  Michael A. Mastro ,  Travis Anderson

发明人： Francis J. Kub ,  Karl D. Hobart ,  Charles R. Eddy, Jr. ,  Michael A. Mastro ,  Travis Anderson

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/778 ,  H01L29/0847 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

摘要翻译： 提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。

公开(公告)号：US08384129B2

公开(公告)日：2013-02-26

申请号：US12823210

申请日：2010-06-25

申请人： Francis J. Kub ,  Karl D. Hobart ,  Charles R. Eddy, Jr. ,  Michael A Mastro ,  Travis Anderson

发明人： Francis J. Kub ,  Karl D. Hobart ,  Charles R. Eddy, Jr. ,  Michael A Mastro ,  Travis Anderson

IPC分类号： H01L29/778

CPC分类号： H01L29/778 ,  H01L29/0847 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

摘要翻译： 提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。