公开(公告)号：US06723780B2

公开(公告)日：2004-04-20

申请号：US10299127

申请日：2002-11-18

申请人： Nigel Hacker ,  Todd Krajewski ,  Richard Spear

发明人： Nigel Hacker ,  Todd Krajewski ,  Richard Spear

IPC分类号： B32B2742

CPC分类号： G03F7/094 ,  G03F7/0236 ,  Y10S428/901 ,  Y10T428/31688 ,  Y10T428/31942

摘要： A process for forming a planarization film on a substrate that does not smoke or fume on heating includes applying a polymeric solution including a novolac resin having a weight average molecular weight between about 1000 and 3000 amu, which has been fractionated to remove molecules with molecular weight below about 350 amu, a surfactant selected from a group consisting of a non-fluorinated hydrocarbon, a fluorinated hydrocarbon and combinations thereof, and an optional organic solvent to a substrate, followed by heating the substrate.

摘要翻译： 在加热时不吸烟或烟雾的基板上形成平坦化膜的方法包括施加包含重量平均分子量在约1000和3000amu之间的聚合溶液，其已被分级分离以除去分子量分子 低于约350amu，将选自非氟化烃，氟化烃及其组合的表面活性剂和任选的有机溶剂加入到基材中，然后加热基材。

公开(公告)号：US06517951B2

公开(公告)日：2003-02-11

申请号：US09735746

申请日：2000-12-12

申请人： Nigel Hacker ,  Todd Krajewski ,  Richard Spear

发明人： Nigel Hacker ,  Todd Krajewski ,  Richard Spear

IPC分类号： B32B2742

CPC分类号： G03F7/094 ,  G03F7/0236 ,  Y10S428/901 ,  Y10T428/31688 ,  Y10T428/31942

摘要： A process for forming a planarization film on a substrate that does not smoke or fume on heating includes applying a polymeric solution including a novolac resin having a weight average molecular weight between about 1000 and 3000 amu, which has been fractionated to remove molecules with molecular weight below about 350 amu, a surfactant selected from a group consisting of a non-fluorinated hydrocarbon, a fluorinated hydrocarbon and combinations thereof, and an optional organic solvent to a substrate, followed by heating the substrate.

公开(公告)号：US06506831B2

公开(公告)日：2003-01-14

申请号：US09205006

申请日：1998-12-02

申请人： Nigel Hacker ,  Todd Krajewski ,  Richard Spear

发明人： Nigel Hacker ,  Todd Krajewski ,  Richard Spear

IPC分类号： B32B2742

CPC分类号： G03F7/094 ,  G03F7/0236 ,  Y10S428/901 ,  Y10T428/31688 ,  Y10T428/31942

摘要： A process for forming a planarization film on a substrate that does not smoke or fume on heating includes applying a polymeric solution including a novolac resin having a weight average molecular weight between about 1000 and 3000 amu, which has been fractionated to remove molecules with molecular weight below about 350 amu, a surfactant selected from a group consisting of a non-fluorinated hydrocarbon, a fluorinated hydrocarbon and combinations thereof, and an optional organic solvent to a substrate, followed by heating the substrate.

公开(公告)号：US06506441B2

公开(公告)日：2003-01-14

申请号：US09735838

申请日：2000-12-12

申请人： Nigel Hacker ,  Todd Krajewski ,  Richard Spear

发明人： Nigel Hacker ,  Todd Krajewski ,  Richard Spear

IPC分类号： B05D512

CPC分类号： G03F7/094 ,  G03F7/0236 ,  Y10S428/901 ,  Y10T428/31688 ,  Y10T428/31942

摘要： A process for forming a planarization film on a substrate that does not smoke or fume on heating includes applying a polymeric solution including a novolac resin having a weight average molecular weight between about 1000 and 3000 amu, which has been fractionated to remove molecules with molecular weight below about 350 amu, a surfactant selected from a group consisting of a non-fluorinated hydrocarbon, a fluorinated hydrocarbon and combinations thereof, and an optional organic solvent to a substrate, followed by heating the substrate.

公开(公告)号：US20050245717A1

公开(公告)日：2005-11-03

申请号：US11178544

申请日：2005-07-11

申请人： Joseph Kennedy ,  Teresa Baldwin ,  Nigel Hacker ,  Richard Spear

发明人： Joseph Kennedy ,  Teresa Baldwin ,  Nigel Hacker ,  Richard Spear

IPC分类号： G03F7/004 ,  C03C17/00 ,  C03C17/30 ,  C07F7/18 ,  C08K5/00 ,  C09D7/12 ,  C09D183/04 ,  C09D183/06 ,  C09D183/08 ,  G03C1/492 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027

CPC分类号： G03F7/091 ,  C03C17/008 ,  C03C17/30 ,  C08K5/0008 ,  C09D183/04 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0752 ,  H01L21/0276 ,  Y10T428/31663 ,  C08L83/04 ,  C08L2666/28

摘要： Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

公开(公告)号：US20070100109A1

公开(公告)日：2007-05-03

申请号：US10520252

申请日：2002-08-15

申请人： Nigel Hacker ,  Scott Leffert ,  Lisa Figge ,  Richard Spear ,  William Bedwell ,  Teresa Ramos

发明人： Nigel Hacker ,  Scott Leffert ,  Lisa Figge ,  Richard Spear ,  William Bedwell ,  Teresa Ramos

IPC分类号： C08G77/12

CPC分类号： H01L21/02126 ,  C08G77/12 ,  C08G77/20 ,  H01B3/46 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： Low dielectric materials are described herein that comprise a plurality of pores or nanopores in addition to the ultrananopores. It is further contemplated that the low dielectric materials described herein will have a dielectric constant of less than about 3. The dielectric materials are fromed from polymer compositions, wherein the polymer compositions comprise a plurality of monomers and wherein at least one monomer comprises a radical precursor bonded to a structural precursor. Further, methods of forming dielectric materials from polymer compositions are presented. The figure shows the chemical structure for a methyl/t-butyl Low organic Content/Low Organic Siloxane Polymer.

摘要翻译： 本文描述的低电介质材料除了超极子纳米孔之外还包含多个孔或纳米孔。 进一步预期，本文所述的低电介质材料将具有小于约3的介电常数。介电材料来自聚合物组合物，其中聚合物组合物包含多个单体，并且其中至少一个单体包含自由基前体 结合到结构前体。 此外，提出了从聚合物组合物形成电介质材料的方法。 该图显示了甲基/叔丁基低有机含量/低有机硅氧烷聚合物的化学结构。

公开(公告)号：US06969753B2

公开(公告)日：2005-11-29

申请号：US10300357

申请日：2002-11-19

申请人： Teresa Baldwin ,  Joseph Kennedy ,  Nigel Hacker ,  Richard Spear

发明人： Teresa Baldwin ,  Joseph Kennedy ,  Nigel Hacker ,  Richard Spear

IPC分类号： G03F7/004 ,  C03C17/00 ,  C03C17/30 ,  C07F7/18 ,  C08K5/00 ,  C09D7/12 ,  C09D183/04 ,  C09D183/06 ,  C09D183/08 ,  G03C1/492 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  C08G77/12

CPC分类号： G03F7/091 ,  C03C17/008 ,  C03C17/30 ,  C08K5/0008 ,  C09D183/04 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0752 ,  H01L21/0276 ,  Y10T428/31663 ,  C08L83/04 ,  C08L2666/28

摘要： Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

摘要翻译： 用于深紫外光刻的抗反射涂层材料包括掺入旋涂玻璃材料中的一种或多种有机光吸收化合物。 合适的吸收化合物在可用于光刻的诸如365nm，248nm和193nm的波长附近的波长范围上是强吸收的。 制造吸收旋涂玻璃材料的方法包括在旋涂玻璃材料的合成期间将一种或多种有机吸收化合物与烷氧基硅烷或卤代硅烷反应物组合。

公开(公告)号：US06824879B2

公开(公告)日：2004-11-30

申请号：US10001143

申请日：2001-11-15

申请人： Teresa Baldwin ,  Joseph Kennedy ,  Nigel Hacker ,  Richard Spear

发明人： Teresa Baldwin ,  Joseph Kennedy ,  Nigel Hacker ,  Richard Spear

IPC分类号： C08G7718

CPC分类号： G02B5/23 ,  C03C17/008 ,  C03C17/30 ,  C08G77/04 ,  C08G77/12 ,  C08K5/0008 ,  C09D183/04 ,  C09D183/06 ,  C09D183/08 ,  G03F7/091 ,  H01L21/0276 ,  Y10T428/31663 ,  C08L83/04 ,  C08L2666/28

摘要： Anti-reflective coating materials for ultraviolet photolithography include at least one organic light-absorbing compound incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining at least one organic absorbing compound with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

摘要翻译： 用于紫外光刻的抗反射涂层材料包括掺入旋涂玻璃材料中的至少一种有机光吸收化合物。 合适的吸收化合物在可用于光刻的诸如365nm，248nm，193nm和157nm的波长周围的波长范围上是强吸收的。 制造吸收旋涂玻璃材料的方法包括在旋涂玻璃材料的合成期间将至少一种有机吸收化合物与烷氧基硅烷或卤代硅烷反应物组合。

公开(公告)号：US06365765B1

公开(公告)日：2002-04-02

申请号：US09698883

申请日：2000-10-27

申请人： Teresa Baldwin ,  Nigel Hacker ,  Joseph Kennedy ,  Richard Spear

发明人： Teresa Baldwin ,  Nigel Hacker ,  Joseph Kennedy ,  Richard Spear

IPC分类号： C07F718

CPC分类号： G03F7/091 ,  C03C17/008 ,  C03C17/30 ,  C08K5/0008 ,  C09D183/04 ,  C09D183/06 ,  C09D183/08 ,  H01L21/0276 ,  Y10T428/31663 ,  C08L83/04 ,  C08L2666/28

摘要： Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths such as 248 nm and 193 nm that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.

摘要翻译： 用于深紫外光刻的抗反射涂层材料包括掺入旋涂玻璃材料中的一种或多种有机染料。 合适的染料在诸如248nm和193nm的波长周围的波长范围上是强吸收的，可以用于光刻。 制造染色旋涂玻璃材料的方法包括在旋涂玻璃材料合成期间将一种或多种有机染料与烷氧基硅烷反应物组合。

公开(公告)号：US20060078827A1

公开(公告)日：2006-04-13

申请号：US11287992

申请日：2005-11-28

申请人： Nigel Hacker ,  Michael Thomas ,  James Drage

发明人： Nigel Hacker ,  Michael Thomas ,  James Drage

IPC分类号： G03F7/00

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76831 ,  Y10T428/24802

摘要： Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.