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    Pneumatic tire
    8.
    发明授权
    Pneumatic tire 失效
    气动轮胎

    公开(公告)号：US06334476B1

    公开(公告)日：2002-01-01

    申请号：US08924646

    申请日：1997-09-05

    申请人： Nobuyuki Okamura ,  Masahiro Hojo

    发明人： Nobuyuki Okamura ,  Masahiro Hojo

    IPC分类号： B60C100

    CPC分类号： C08K5/5398 ,  B60C1/0016 ,  Y10T152/10855 ,  C08L21/00 ,  C08L9/06

    摘要： A pneumatic tire comprising a tread, wherein the rubber composition of the tread layer comprises 50 parts by weight or more of SBR in 100 parts by weight of the rubber component and, in an amount of 0.2 to 5.0 parts by weight per 100 parts by weight of the rubber component, a vulcanization accelerator represented by the following general formula (I): wherein R1 and R2 each independently represents an alkyl group having 1 to 10 carbon atoms which may be linear, branched, or cyclic or an aryl group having 6 to 10 carbon atoms. The pneumatic tire shows excellent controllability at high speed.

    摘要翻译： 一种包括胎面的充气轮胎，其中所述胎面层的橡胶组合物在100重量份的所述橡胶组分中包含50重量份或更多的SBR，并且以每100重量份计0.2至5.0重量份 的橡胶组分，由以下通式（I）表示的硫化促进剂：其中R 1和R 2各自独立地表示可以是直链，支链或环状的具有1〜10个碳原子的烷基或具有6〜 10个碳原子。 充气轮胎在高速下显示出优异的可控性。

    Plasma CVD process using a very-high-frequency and plasma CVD apparatus
    9.
    发明授权
    Plasma CVD process using a very-high-frequency and plasma CVD apparatus 失效
    使用非常高频和等离子体CVD装置的等离子体CVD工艺

    公开(公告)号：US5534070A

    公开(公告)日：1996-07-09

    申请号：US343560

    申请日：1994-11-30

    申请人： Nobuyuki Okamura ,  Atsushi Yamagami ,  Satoshi Takaki

    发明人： Nobuyuki Okamura ,  Atsushi Yamagami ,  Satoshi Takaki

    IPC分类号： C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00 ,  H05H1/20

    CPC分类号： H01J37/321 ,  C23C16/509 ,  H01J37/32532

    摘要： A plasma CVD process comprises conducting film formation in a reaction chamber capable of being substantially vacuumed in which a plurality of cylindrical substrates are spacedly arranged on a concentric circle in said reaction chamber such that a desired discharge space is formed at the central position of the inside of said reaction chamber and a cathode electrode is disposed at the central position of said discharge space, by introducing a film-forming gas into said discharge space and applying a high frequency power from a high frequency power source to said cathode electrode to produce plasma between said plurality of cylindrical substrates and said cathode electrode, whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates, characterized in that an earth shield comprising a non-magnetic material and a soft magnetic material or an insulating material being stacked is disposed at each of the opposite end portions of said cathode electrode, and a very-high-frequency energy of a frequency range of 60 MHz or more from said high frequency power source is applied to said cathode electrode to produce plasma in said reaction chamber whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates. And a VHF plasma CVD apparatus suitable for practicing the plasma CVD process.

    摘要翻译： PCT No.PCT / JP94 / 00537 371日期1994年11月30日 102（e）1994年11月30日PCT PCT日期为1994年3月31日。等离子体CVD工艺包括在能够基本上被抽真空的反应室中进行成膜，其中多个圆柱形基板间隔布置在同心圆上 所述反应室使得在所述反应室的内部的中心位置处形成期望的放电空间，并且在所述放电空间的中心位置处设置阴极，通过将成膜气体引入所述放电空间并施加 从高频电源到所述阴极电极的高频电力，以在所述多个圆柱形基板和所述阴极之间产生等离子体，由此在所述多个圆柱形基板中的每一个的表面上形成沉积膜，其特征在于， 包括非磁性材料和软磁性材料或层叠的绝缘材料的屏蔽设置在每一个上 e所述阴极电极的相对端部分，并且将所述高频电源的频率范围为60MHz或更高的非常高频能量施加到所述阴极以在所述反应室中产生等离子体，由此形成沉积膜 在所述多个圆柱形基底中的每一个的表面上。 以及适用于实施等离子体CVD工艺的VHF等离子体CVD装置。