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12 条记录 (耗时 0.015 秒)

    Method and system for controlling chiller and semiconductor processing system
    1.
    发明授权
    Method and system for controlling chiller and semiconductor processing system 有权
    控制冷水机组和半导体加工系统的方法和系统

    公开(公告)号：US06986261B2

    公开(公告)日：2006-01-17

    申请号：US10712043

    申请日：2003-11-14

    申请人： Norikazu Sasaki ,  Hiroshi Koizumi ,  Norihiko Amikura

    发明人： Norikazu Sasaki ,  Hiroshi Koizumi ,  Norihiko Amikura

    IPC分类号： F25D17/02

    CPC分类号： H01L21/67766 ,  H01L21/67167 ,  H01L21/67742 ,  H01L21/67745

    摘要： A semiconductor processing system includes a control section that refers to recipe information on a process sequence, thereby detects that a processing apparatus will shift from an ordinary operation state to a long idle state, and switches thermo-medium circulation apparatus from an ordinary mode to an energy-saving mode after the shift to the long idle state. The control section refers to recipe information on the process sequence or another process sequence, thereby detects that the processing apparatus will shift from the long idle state to the ordinary operation state, and switches the thermo-medium circulation apparatus from the energy-saving mode to the ordinary mode before the shift to the ordinary operation state. A thermo-medium is circulated at a first flow rate and at a second flow rate smaller than the first flow rate in the ordinary mode and the energy-saving mode, respectively.

    摘要翻译： 半导体处理系统包括控制部分，其参考处理顺序的配方信息，从而检测处理装置将从普通操作状态转换到长时间闲置状态，并将热介质循环装置从普通模式切换到 节能模式转移到长时间闲置状态。 控制部分参照处理顺序或其他处理顺序的配方信息，从而检测出处理装置将从长时间闲置状态转移到正常操作状态，并将热介质循环装置从节能模式切换到 普通模式转移到普通运行状态之前。 分别在普通模式和节能模式下，热介质以第一流量和小于第一流量的第二流量循环。

    Exhausting method and gas processing apparatus
    6.
    发明授权
    Exhausting method and gas processing apparatus 有权
    排气方式和气体处理装置

    公开(公告)号：US08597401B2

    公开(公告)日：2013-12-03

    申请号：US13205077

    申请日：2011-08-08

    申请人： Norihiko Amikura ,  Risako Miyoshi

    发明人： Norihiko Amikura ,  Risako Miyoshi

    IPC分类号： H01L21/00

    CPC分类号： B01D53/30 ,  B01D2258/0216

    摘要： An exhausting method includes determining an exhaust flow rate of a process gas to be a predetermined value that is less than or equal to a gas flow rate corresponding to a maximum process capability of a purification system when the process gas is diluted to a lower explosive limit; calculating a pressure drop amount per unit time to maintain the determined exhaust flow rate of the process gas, based on a relation between the exhaust flow rate and the pressure drop amount per unit time; and evacuating an inside of the chamber to maintain the determined exhaust flow rate, while controlling the pressure through an automatic pressure control valve by setting a target pressure value to be updated as a control value of the automatic pressure control valve at every predetermined time interval so as to achieve a calculated pressure drop amount per unit time.

    摘要翻译： 排气方法包括将处理气体的排气流量确定为小于或等于当处理气体稀释至较低爆炸极限时与净化系统的最大过程能力相对应的气体流量的预定值 ; 基于每单位时间的排气流量与压降量之间的关系，计算每单位时间的压降量以维持所确定的处理气体的排气流量; 并且通过将目标压力值设定为每隔预定时间间隔的自动压力控制阀的控制值，同时通过自动压力控制阀来控制压力，从而保持所确定的排气流量，从而保持确定的排气流量。 以实现每单位时间的计算压降量。

    Substrate processing apparatus and substrate processing method
    7.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号：US08043659B2

    公开(公告)日：2011-10-25

    申请号：US12022533

    申请日：2008-01-30

    申请人： Eiji Takahashi ,  Norihiko Amikura

    发明人： Eiji Takahashi ,  Norihiko Amikura

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： H01L21/67069 ,  H01L21/02071

    摘要： A substrate processing method capable of controlling the internal pressure of a processing chamber to a high pressure and exhausting gases within the processing chamber at a high rate. The substrate processing method is for use in a substrate processing apparatus having a processing chamber, a supply unit supplying a processing gas into the processing chamber, a first pipe connected to the processing chamber at one end thereof, a turbo molecular pump disposed in the first pipe, a first shutoff valve disposed between the processing chamber and the turbo molecular pump in the first pipe, a second pipe connected to the processing chamber at one end thereof, a pressure control valve disposed in the second pipe, and a dry pump connected to the other end of the first pipe and to the other end of the second pipe. The substrate processing method comprises a pressure control step of controlling the internal pressure of the processing chamber using the pressure control valve after closing the first shutoff valve when performing a treatment on a substrate housed in the processing chamber; a first exhaust step of exhausting gases within the processing chamber through the second pipe using the dry pump by opening the pressure control valve after performing the treatment on the substrate; and a second exhaust step of exhausting gases within the processing chamber through the first pipe using the turbo molecular pump by closing the pressure control valve and opening the first shutoff valve after the first exhaust step.

    摘要翻译： 一种基板处理方法，其能够以高速率将处理室的内部压力控制到高压并且在处理室内排出气体。 基板处理方法用于具有处理室的基板处理装置，向处理室供给处理气体的供给单元，在其一端与处理室连接的第一管，设置在第一个中的涡轮分子泵 管道，设置在第一管中的处理室和涡轮分子泵之间的第一截止阀，在其一端连接到处理室的第二管，设置在第二管中的压力控制阀，以及连接到 第一管的另一端和第二管的另一端。 基板处理方法包括压力控制步骤，当在容纳在处理室中的基板上进行处理时，在关闭第一截止阀之后使用压力控制阀来控制处理室的内部压力; 第一排气步骤，通过在对所述基板进行处理之后打开所述压力控制阀，通过所述干式泵通过所述第二管排出所述处理室内的气体; 以及第二排气步骤，通过关闭所述压力控制阀并在所述第一排气步骤之后打开所述第一截止阀，通过所述涡轮分子泵通过所述第一管排出所述处理室内的气体。

    Plasma processing apparatus and gas supply method therefor
    8.
    发明授权
    Plasma processing apparatus and gas supply method therefor 有权
    等离子体处理装置及其供气方法

    公开(公告)号：US09236230B2

    公开(公告)日：2016-01-12

    申请号：US13483843

    申请日：2012-05-30

    申请人： Yoshiyuki Kato ,  Norihiko Amikura ,  Risako Miyoshi ,  Kimihiro Fukasawa

    发明人： Yoshiyuki Kato ,  Norihiko Amikura ,  Risako Miyoshi ,  Kimihiro Fukasawa

    IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/52

    CPC分类号： H01J37/32449 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/52 ,  H01J37/3244 ,  Y10T137/0368

    摘要： It is possible to prevent processing gases from being mixed when alternately supplying the processing gases while alternately switching the processing gases and to suppressed a transient phenomenon more efficiently as compared to conventional cases. When supplying at least two kinds of processing gases (e.g., a C4F6 gas and a C4F8 gas) into a processing chamber while alternately switching the at least two kinds of processing gases during a plasma process on a wafer, the supply of each processing gas can be alternately turned on and off by alternately setting an instruction flow rate of a mass flow controller to be a predetermined flow rate and a zero flow rate while a downstream opening/closing valve provided at a downstream side of the mass flow controller is open.

    摘要翻译： 与常规情况相比，可以在交替地切换处理气体的同时交替地供给处理气体并且与现有技术相比更有效地抑制瞬态现象，可以防止加工气体混合。 当在晶片上等离子体处理期间交替地切换至少两种处理气体时，将至少两种处理气体（例如，C 4 F 6气体和C 4 F 8气体）供应到处理室中，每个处理气体的供应可以 通过在设置在质量流量控制器的下游侧的下游打开/关闭阀打开的同时将质量流量控制器的指令流量交替地设定为预定流量和零流量来交替地接通和关闭。