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Patent Agency Ranking
1.发明申请公开(公告)号：US20150255683A1
公开(公告)日：2015-09-10
申请号：US14428896
申请日：2013-09-16
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Ion Stoll , Sebastian Taeger , Hans-Christoph Gallmeier , Gudrun Lindberg , Stefan Hartauer
CPC classification number: H01L33/44 , H01L33/46 , H01L33/502 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2224/8592 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066 , H01L2933/0091 , H01L2924/00014
Abstract: A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate-and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.
Abstract translation: 可以使用一种方法将半导体芯片上的无矩阵电泳沉积层固定。 半导体晶片具有载体衬底和至少一个半导体芯片。 所述至少一个半导体芯片具有用于产生电磁辐射的活动区域。 在至少一个半导体芯片的远离载体衬底的表面上形成至少一个接触区域。 为了形成电泳沉积层，将材料电泳沉积在至少一个半导体芯片背离载体衬底的表面上。 防止材料沉积在至少一个接触区域上。 将无机基质材料施加到半导体晶片的远离载体衬底的表面的至少一个部分，以将材料固定在至少一个半导体芯片上。
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公开(公告)号：US10290997B2
公开(公告)日：2019-05-14
申请号：US15550888
申请日：2016-02-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Mueller , Christoph Stephan , Robert Walter , Stefan Hartauer , Christian Rumbolz
Abstract: A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.
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公开(公告)号：US20180048122A1
公开(公告)日：2018-02-15
申请号：US15550888
申请日：2016-02-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Mueller , Christoph Stephan , Robert Walter , Stefan Hartauer , Christian Rumbolz
CPC classification number: H01S5/2086 , H01S5/0282 , H01S5/0422 , H01S5/0425 , H01S5/22 , H01S2301/176
Abstract: A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.
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公开(公告)号：US09831390B2
公开(公告)日：2017-11-28
申请号：US14428896
申请日：2013-09-16
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Ion Stoll , Sebastian Taeger , Hans-Christoph Gallmeier , Gudrun Lindberg , Stefan Hartauer
CPC classification number: H01L33/44 , H01L33/46 , H01L33/502 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2224/8592 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066 , H01L2933/0091 , H01L2924/00014
Abstract: A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.
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公开(公告)号：US09893232B2
公开(公告)日：2018-02-13
申请号：US15514489
申请日：2015-09-24
Applicant: OSRAM Opto Semiconductors GmbH , OSRAM GmbH
Inventor： Bernd Boehm , Daniel Zaspel , Stefan Hartauer , Bjoern Hoxhold
IPC: H01L33/00
CPC classification number: H01L33/0095 , H01L33/486 , H01L33/642 , H01L2933/005
Abstract: The invention provides an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component (10), comprising the following steps: A) arranging at least one semiconductor chip (2) on a carrier (1), B) applying an electrically insulating photoresist (3) to a top side (1a) of the carrier (1) and to the semiconductor chip (2), C) curing the photoresist (3) with a baking step, D) patterning the photoresist (3) by exposure, F) developing the photoresist (3), wherein the photoresist (3) is removed at least from a radiation penetration surface (2b) of the semiconductor chip (2), G) again curing the photoresist (3) with a baking step, and H) applying an electrically conductive contact layer (4) to the photoresist (3), wherein the electrically conductive contact layer (4) is in places at a distance (A) from a marginal surface (3a) of the photoresist (3) which faces towards the semiconductor chip (2), wherein the marginal surface (3a) facing towards the semiconductor chip (2) is exposed in places.
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