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1.发明授权公开(公告)号：US09362466B2
公开(公告)日：2016-06-07
申请号：US14493257
申请日：2014-09-22
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Hans-Christoph Gallmeier , Michael Kruppa , Raimund Schwarz , Guenter Spath
CPC classification number: H01L33/507 , H01L33/38 , H01L33/50 , H01L33/62 , H01L2224/48091 , H01L2224/48465 , H01L2933/0033 , H01L2933/0041 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.
Abstract translation: 一种制造光电子半导体部件的方法，包括：在复合晶片中提供半导体芯片，其包括用于发射初级辐射的有源侧和布置在所述有源侧的接触端子; 在活动侧上沉积耦合元件; 附接用于将一次辐射的一部分转换成二次辐射的发光转换元件连接到耦合元件。
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2.发明授权公开(公告)号：US09590151B2
公开(公告)日：2017-03-07
申请号：US14785620
申请日：2014-04-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Markus Richter , Alexander Baumgartner , Hans-Christoph Gallmeier , Tony Albrecht
CPC classification number: H01L33/507 , H01L33/0095 , H01L33/508 , H01L33/54 , H01L33/56 , H01L33/60 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps: providing a plurality of semiconductor bodies (1) which are suitable for emitting electromagnetic radiation from a radiation exit face (3), applying the semiconductor bodies (1) to a carrier (2), applying a first mask layer (4) to regions of the carrier (2) between the semiconductor bodies (1), applying a conversion layer (5) to the entire surface of the semiconductor bodies (1) and the first mask layer (4) using a spray coating method, and removing the first mask layer (4), such that in each case a conversion layer (5) arises on the radiation exit faces (3) of the semiconductor bodies (1).
Abstract translation: 提供了一种用于制造多个辐射发射半导体芯片的方法，具有以下步骤：提供适于从辐射出射面（3）发射电磁辐射的多个半导体本体（1），施加半导体本体（ 1）到载体（2）上，在半导体体（1）之间的载体（2）的区域上施加第一掩模层（4），在半导体本体（1）的整个表面上施加转换层 ）和第一掩模层（4），并且去除第一掩模层（4），使得在每种情况下，在半导体主体的辐射出射面（3）上出现转换层（5） 1）。
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3.发明申请公开(公告)号：US20150200138A1
公开(公告)日：2015-07-16
申请号：US14405393
申请日：2013-05-03
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Thomas Schlereth , Michael Bestele , Christian Gaertner , Tobias Gebuhr , Hans-Christoph Gallmeier , Peter Holzer , Karlheinz Arndt , Albert Schneider
IPC: H01L21/78 , H01L23/495 , H01L21/66 , H01L21/50
CPC classification number: H01L21/78 , G01R31/2635 , H01L21/50 , H01L22/10 , H01L23/49541 , H01L23/49565 , H01L33/0095 , H01L33/486 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2933/0033 , H01L2933/0066 , H01L2924/00014
Abstract: In one embodiment, the method is configured for producing optoelectronic semiconductor components (1) and includes the steps of: providing a leadframe assembly (20) with a multiplicity of leadframes (2), each having at least two leadframe parts (21, 22); forming at least a part of the leadframe assembly (20) with a housing material for housing bodies (4); dividing the leadframe assembly (20) between at least one part of the columns (C) and/or the rows (R), wherein the leadframes (2) remain arranged in a matrix-like manner; equipping the leadframes (2) with at least one optoelectronic semiconductor chip (3); testing at least one part of the leadframes (2) equipped with the semiconductor chips (3) and formed with the housing material after the step of dividing; and separating to form the semiconductor components (1) after the step of forming and after the step of testing.
Abstract translation: 在一个实施例中，该方法被配置用于制造光电子半导体部件（1），并且包括以下步骤：提供具有多个引线框架（2）的引线框组件（20），每个引线框架（2）具有至少两个引线框部件（21,22） ; 用用于壳体（4）的壳体材料形成所述引线框架组件（20）的至少一部分; 在所述列（C）的至少一部分和/或所述行（R）之间划分所述引线框架组件（20），其中所述引线框架（2）保持以矩阵状方式布置; 将引线框架（2）装配至少一个光电半导体芯片（3）; 测试配备有半导体芯片（3）的引线框（2）的至少一部分，并在分割步骤之后形成外壳材料; 并且在成型步骤和测试步骤之后分离形成半导体部件（1）。
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公开(公告)号：US20180033931A1
公开(公告)日：2018-02-01
申请号：US15730214
申请日：2017-10-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Johann Ramchen , David Racz , Hans-Christoph Gallmeier , Stefan Grötsch , Simon Jerebic
IPC: H01L33/60 , H01L33/46 , H01L23/29 , H01L33/62 , H01L33/54 , H01L23/31 , H01L25/16 , H01L25/075 , H01L23/00 , H01L23/60 , H01L31/0232
CPC classification number: H01L33/60 , H01L23/295 , H01L23/3121 , H01L23/60 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/0753 , H01L25/167 , H01L31/0232 , H01L33/46 , H01L33/54 , H01L33/56 , H01L33/62 , H01L2224/291 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2924/00014 , H01L2924/01013 , H01L2924/01023 , H01L2924/01079 , H01L2924/05032 , H01L2924/05432 , H01L2924/12036 , H01L2924/181 , H01L2924/207 , H01L2924/00 , H01L2924/014 , H01L2924/00012 , H01L2224/45099
Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.
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公开(公告)号：US09831390B2
公开(公告)日：2017-11-28
申请号：US14428896
申请日：2013-09-16
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Ion Stoll , Sebastian Taeger , Hans-Christoph Gallmeier , Gudrun Lindberg , Stefan Hartauer
CPC classification number: H01L33/44 , H01L33/46 , H01L33/502 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2224/8592 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066 , H01L2933/0091 , H01L2924/00014
Abstract: A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.
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Patent Agency Ranking
6.发明授权公开(公告)号：US09373760B2
公开(公告)日：2016-06-21
申请号：US14651306
申请日：2013-12-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Baumgartner , Markus Richter , Hans-Christoph Gallmeier , Tony Albrecht
CPC classification number: H01L33/507 , H01L33/505 , H01L33/508 , H01L33/58
Abstract: The invention relates to an optoelectronic semiconductor element that emits mixed-color radiation when in operation. The optoelectronic semiconductor component comprises an optoelectronic semiconductor chip, a conversion element that has a curvature, and a spacer element that is arranged between the optoelectronic semiconductor chip and conversion element. The spacer has a curved surface that faces the conversion element, with the conversion element being in direct contact with the curved surface.
Abstract translation: 本发明涉及一种在操作时发出混合色辐射的光电子半导体元件。 光电子半导体部件包括光电子半导体芯片，具有曲率的转换元件和布置在光电半导体芯片和转换元件之间的间隔元件。 间隔物具有面向转换元件的曲面，转换元件与弯曲表面直接接触。
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7.发明申请Optoelectronic Semiconductor Component, Conversion-Medium Lamina and Method for Producing a Conversion-Medium Lamina 有权光电子半导体组件，转化介质层和生产转化介质层的方法公开(公告)号：US20150200339A1
公开(公告)日：2015-07-16
申请号：US14420310
申请日：2013-07-30
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Ales Markytan , Christian Gärtner , Hans-Christoph Gallmeier , Ion Stoll , Herbert Brunner , Thomas Schlereth
IPC: H01L33/50
CPC classification number: H01L33/501 , H01L33/504 , H01L33/505 , H01L33/508 , H01L2924/0002 , H01L2924/00
Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.
Abstract translation: 在至少一个实施例中，半导体部件包括光电子半导体芯片。 此外，半导体部件包括转换介质层，其被安装到半导体芯片的主辐射侧，并被设计用于将初级辐射转换成次级辐射。 转化介质层包括嵌入其中的基质材料和转化介质颗粒。 此外，转换介质层包括转化层。 转化介质颗粒位于至少一个转化层中。 任选存在的单独或与扩散介质颗粒一起的转化介质颗粒占转化层的至少50％的体积比例。 此外，转化介质层包括含有体积比至多2.5％的转化介质颗粒的粘合剂层。
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8.发明申请公开(公告)号：US20150155446A1
公开(公告)日：2015-06-04
申请号：US14400668
申请日：2013-05-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Ion Stoll , Hans-Christoph Gallmeier , Claudia Jurenka
CPC classification number: H01L33/50 , B05B5/00 , B05B5/005 , B05B5/006 , B05B5/0255 , B05B5/1608 , B05B5/1675 , H01L2933/0041
Abstract: A method of manufacturing optoelectronic components includes spraying a fluorescent layer of an optoelectronic component onto a substrate, the substance or the substance mixture of the fluorescent layer including an electric charge when sprayed on, and wherein the electrically charged substance or the at least partially electrically charged substance mixture includes a larger electric potential when the fluorescent layer is sprayed on than at least one area of the substrate; and locally adjusting the thickness of the fluorescent layer of the sprayed-on fluorescent substance when spraying on the fluorescent layer onto the substrate by an electric potential gradient.
Abstract translation: 制造光电子部件的方法包括将光电子部件的荧光层喷射到基板上，荧光层的物质或物质混合物在喷射时包括电荷，并且其中带电物质或至少部分带电的 当荧光层被喷射时，物质混合物包括比衬底的至少一个区域更大的电位; 并且通过电位梯度将荧光层上的荧光层喷射到基板上时，局部调整喷涂荧光物质的荧光层的厚度。
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公开(公告)号：US10217915B2
公开(公告)日：2019-02-26
申请号：US15730214
申请日：2017-10-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Johann Ramchen , David Racz , Hans-Christoph Gallmeier , Stefan Grötsch , Simon Jerebic
IPC: H01L33/60 , H01L33/46 , H01L23/29 , H01L23/31 , H01L23/00 , H01L25/075 , H01L31/0232 , H01L33/54 , H01L33/62 , H01L25/16 , H01L23/60 , H01L33/56
Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.
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10.发明授权公开(公告)号：US09793445B2
公开(公告)日：2017-10-17
申请号：US14400668
申请日：2013-05-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Ion Stoll , Hans-Christoph Gallmeier , Claudia Jurenka
CPC classification number: H01L33/50 , B05B5/00 , B05B5/005 , B05B5/006 , B05B5/0255 , B05B5/1608 , B05B5/1675 , H01L2933/0041
Abstract: A method of manufacturing optoelectronic components includes spraying a fluorescent layer of an optoelectronic component onto a substrate, the substance or the substance mixture of the fluorescent layer including an electric charge when sprayed on, and wherein the electrically charged substance or the at least partially electrically charged substance mixture includes a larger electric potential when the fluorescent layer is sprayed on than at least one area of the substrate; and locally adjusting the thickness of the fluorescent layer of the sprayed-on fluorescent substance when spraying on the fluorescent layer onto the substrate by an electric potential gradient.
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