摘要:
An apparatus for determining a magnitude of a compressive load applied to a piston including a compliant film disposed between first and second elements is provided. The apparatus includes a first part movable with the first element in a movement direction along which the magnitude of the compressive load is to be determined, a second part movable with the second element in the movement direction and a sensor to measure a distance between the first and second parts in the movement direction, the measured distance being related to a deformation of the compliant film as the compressive load is applied.
摘要:
An apparatus for determining a magnitude of a compressive load applied to a piston including a compliant film disposed between first and second elements is provided. The apparatus includes a first part movable with the first element in a movement direction along which the magnitude of the compressive load is to be determined, a second part movable with the second element in the movement direction and a sensor to measure a distance between the first and second parts in the movement direction, the measured distance being related to a deformation of the compliant film as the compressive load is applied.
摘要:
An apparatus for determining a thickness change of thermal interface material (TIM) disposed between first and second elements is provided. The apparatus includes a first part movable with the first element in a movement direction along which the TIM thickness is to be determined, a second part movable with the second element in the movement direction and a sensor to measure a distance between the first and second parts in the movement direction, the measured distance being related to the TIM thickness change.
摘要:
An apparatus for determining a thickness change of thermal interface material (TIM) disposed between first and second elements is provided. The apparatus includes a first part movable with the first element in a movement direction along which the TIM thickness is to be determined, a second part movable with the second element in the movement direction and a sensor to measure a distance between the first and second parts in the movement direction, the measured distance being related to the TIM thickness change.
摘要:
Disclosed is a multilayer thermal interface material which includes a first layer of metallic thermal interface material, a buffer layer and preferably a second layer of thermal interface material which may be metallic or nonmetallic. The multilayer thermal interface material is used in conjunction with a semiconductor device assembly of a chip carrier substrate, a heat spreader for attaching to the substrate, a semiconductor device mounted on the substrate and underneath the heat spreader and the multilayer thermal interface material interposed between the heat spreader and the semiconductor device. The heat spreader has a first coefficient of thermal expansion (CTE), CTE1, the buffer layer has a second CTE, CTE2, and the semiconductor device has a third CTE, CTE3, wherein CTE1>CTE2>CTE3.
摘要:
The invention is directed to an improved microelectronics device that reduces BEOL delamination by reducing the tensile stress imposed on the via which connects first level interconnects with the BEOL. Tensile stress imposed on the via is reduced by shifting the via towards the center of a silicon chip or alternatively shifting the UBM towards the corners of the silicon chip.
摘要:
Disclosed is a multilayer thermal interface material which includes a first layer of metallic thermal interface material, a buffer layer and preferably a second layer of thermal interface material which may be metallic or nonmetallic. The multilayer thermal interface material is used in conjunction with a semiconductor device assembly of a chip carrier substrate, a heat spreader for attaching to the substrate, a semiconductor device mounted on the substrate and underneath the heat spreader and the multilayer thermal interface material interposed between the heat spreader and the semiconductor device. The heat spreader has a first coefficient of thermal expansion (CTE), CTE1, the buffer layer has a second CTE, CTE2, and the semiconductor device has a third CTE, CTE3, wherein CTE1>CTE2>CTE3.
摘要:
The invention is directed to an improved microelectronics device that reduces BEOL delamination by reducing the tensile stress imposed on the via which connects first level interconnects with the BEOL. Tensile stress imposed on the via is reduced by shifting the via towards the center of a silicon chip or alternatively shifting the UBM towards the corners of the silicon chip.
摘要:
A symmetrical, flat laminate structure used to minimize variables in a test structure to experimentally gauge white bump sensitivity to CTE mismatch is disclosed. The test structure includes a flat laminate structure. The method of using the test structure includes isolating a cause of a multivariable chip join problem that is adversely impacted by warpage and quantifying a contribution of the warpage, itself, in a formation of the multivariable chip join problem.
摘要:
Disclosed are embodiments of a flip-chip assembly and method using lead-free solder. This assembly incorporates mushroom-plated metal layers that fill and overflow solder resist openings on an organic laminate substrate. The lower portion of metal layer provides structural support to its corresponding solder resist opening. The upper portion (i.e., cap) of each metal layer provides a landing spot for a solder joint between an integrated circuit device and the substrate and, thereby, allows for enhanced solder volume control. The additional structural support, in combination with the enhanced solder volume control, minimizes strain on the resulting solder joints. Additionally, the cap further allows the minimum diameter of the solder joint on the substrate-side of the assembly to be larger than the diameter of the solder resist opening. Thus, the invention decouples C4 reliability concerns from laminate design concerns and, thereby, allows for greater design flexibility.