DETERMINING THERMAL INTERFACE MATERIAL (TIM) THICKNESS CHANGE
    3.
    发明申请
    DETERMINING THERMAL INTERFACE MATERIAL (TIM) THICKNESS CHANGE 失效
    确定热界面材料(TIM)厚度变化

    公开(公告)号:US20130027063A1

    公开(公告)日:2013-01-31

    申请号:US13191729

    申请日:2011-07-27

    IPC分类号: G01R27/26

    CPC分类号: G01B7/08 G01N27/22 H01L22/12

    摘要: An apparatus for determining a thickness change of thermal interface material (TIM) disposed between first and second elements is provided. The apparatus includes a first part movable with the first element in a movement direction along which the TIM thickness is to be determined, a second part movable with the second element in the movement direction and a sensor to measure a distance between the first and second parts in the movement direction, the measured distance being related to the TIM thickness change.

    摘要翻译: 提供一种用于确定设置在第一和第二元件之间的热界面材料(TIM)的厚度变化的装置。 该装置包括:第一部件,沿第一部件可沿着移动方向移动,TIM移动方向上沿着移动方向确定TIM厚度;第二部件,其沿着移动方向与第二部件移动;以及传感器,用于测量第一部件和第二部件之间的距离 在移动方向上,测量的距离与TIM厚度变化有关。

    Determining thermal interface material (TIM) thickness change
    4.
    发明授权
    Determining thermal interface material (TIM) thickness change 失效
    确定热界面材料(TIM)厚度变化

    公开(公告)号:US08717043B2

    公开(公告)日:2014-05-06

    申请号:US13191729

    申请日:2011-07-27

    CPC分类号: G01B7/08 G01N27/22 H01L22/12

    摘要: An apparatus for determining a thickness change of thermal interface material (TIM) disposed between first and second elements is provided. The apparatus includes a first part movable with the first element in a movement direction along which the TIM thickness is to be determined, a second part movable with the second element in the movement direction and a sensor to measure a distance between the first and second parts in the movement direction, the measured distance being related to the TIM thickness change.

    摘要翻译: 提供一种用于确定设置在第一和第二元件之间的热界面材料(TIM)的厚度变化的装置。 该装置包括:第一部件,沿第一部件可沿着移动方向移动,TIM移动方向上沿着移动方向确定TIM厚度;第二部件,其沿着移动方向与第二部件移动;以及传感器,用于测量第一部件和第二部件之间的距离 在移动方向上,测量的距离与TIM厚度变化有关。

    SEMICONDUCTOR DEVICE ASSEMBLY HAVING A STRESS-RELIEVING BUFFER LAYER
    5.
    发明申请
    SEMICONDUCTOR DEVICE ASSEMBLY HAVING A STRESS-RELIEVING BUFFER LAYER 有权
    具有应力缓冲缓冲层的半导体器件组件

    公开(公告)号:US20100327430A1

    公开(公告)日:2010-12-30

    申请号:US12491517

    申请日:2009-06-25

    IPC分类号: H01L23/34 F28F21/00

    摘要: Disclosed is a multilayer thermal interface material which includes a first layer of metallic thermal interface material, a buffer layer and preferably a second layer of thermal interface material which may be metallic or nonmetallic. The multilayer thermal interface material is used in conjunction with a semiconductor device assembly of a chip carrier substrate, a heat spreader for attaching to the substrate, a semiconductor device mounted on the substrate and underneath the heat spreader and the multilayer thermal interface material interposed between the heat spreader and the semiconductor device. The heat spreader has a first coefficient of thermal expansion (CTE), CTE1, the buffer layer has a second CTE, CTE2, and the semiconductor device has a third CTE, CTE3, wherein CTE1>CTE2>CTE3.

    摘要翻译: 公开了一种多层热界面材料,其包括金属热界面材料的第一层,缓冲层,优选为第二层热界面材料,其可以是金属或非金属的。 多层热界面材料与芯片载体衬底的半导体器件组件,用于附接到衬底的散热器,安装在衬底上的散热器和放置在散热器下方的多层热界面材料结合使用 散热器和半导体器件。 散热器具有第一热膨胀系数(CTE),CTE1,缓冲层具有第二CTE,CTE2,半导体器件具有第三个CTE CTE3,其中CTE1> CTE2> CTE3。

    Semiconductor device assembly having a stress-relieving buffer layer
    7.
    发明授权
    Semiconductor device assembly having a stress-relieving buffer layer 有权
    具有应力消除缓冲层的半导体器件组件

    公开(公告)号:US07875972B2

    公开(公告)日:2011-01-25

    申请号:US12491517

    申请日:2009-06-25

    IPC分类号: H01L23/34

    摘要: Disclosed is a multilayer thermal interface material which includes a first layer of metallic thermal interface material, a buffer layer and preferably a second layer of thermal interface material which may be metallic or nonmetallic. The multilayer thermal interface material is used in conjunction with a semiconductor device assembly of a chip carrier substrate, a heat spreader for attaching to the substrate, a semiconductor device mounted on the substrate and underneath the heat spreader and the multilayer thermal interface material interposed between the heat spreader and the semiconductor device. The heat spreader has a first coefficient of thermal expansion (CTE), CTE1, the buffer layer has a second CTE, CTE2, and the semiconductor device has a third CTE, CTE3, wherein CTE1>CTE2>CTE3.

    摘要翻译: 公开了一种多层热界面材料,其包括金属热界面材料的第一层,缓冲层,优选为第二层热界面材料,其可以是金属或非金属的。 多层热界面材料与芯片载体衬底的半导体器件组件,用于附接到衬底的散热器,安装在衬底上的散热器和放置在散热器下方的多层热界面材料结合使用 散热器和半导体器件。 散热器具有第一热膨胀系数(CTE),CTE1,缓冲层具有第二CTE,CTE2,半导体器件具有第三个CTE CTE3,其中CTE1> CTE2> CTE3。