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    Semiconductor light emitting device and method of manufacturing the same
    3.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 失效
    半导体发光器件及其制造方法

    公开(公告)号：US07968893B2

    公开(公告)日：2011-06-28

    申请号：US12210472

    申请日：2008-09-15

    申请人： Sang Yeob Song ,  Jin Hyun Lee ,  Yu Seung Kim ,  Kwang Ki Choi ,  Pun Jae Choi ,  Hyun Soo Kim ,  Sang Bum Lee

    发明人： Sang Yeob Song ,  Jin Hyun Lee ,  Yu Seung Kim ,  Kwang Ki Choi ,  Pun Jae Choi ,  Hyun Soo Kim ,  Sang Bum Lee

    IPC分类号： H01L31/0256 ,  H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/40 ,  H01L33/32

    摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

    摘要翻译： 公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性 器件的低压工作及其制造方法。 半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

    WHITE LIGHT EMITTING DEVICE
    7.
    发明申请
    WHITE LIGHT EMITTING DEVICE 失效
    白光发光装置

    公开(公告)号：US20120223660A1

    公开(公告)日：2012-09-06

    申请号：US13474240

    申请日：2012-05-17

    申请人： Pun Jae Choi ,  Masayoshi Koike ,  Sang Yeob Song

    发明人： Pun Jae Choi ,  Masayoshi Koike ,  Sang Yeob Song

    IPC分类号： H05B33/14

    CPC分类号： H01L33/50 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.

    摘要翻译： 白色发光器件包括通过使用两个或更少的LED发射具有至少四个波长的白光的结构，其中LED包括发射蓝色和绿色波长的光的蓝/绿LED。 该装置还包括用于发射红色波长的光的装置。

    Vertical structure LED device and method of manufacturing the same
    8.
    发明授权
    Vertical structure LED device and method of manufacturing the same 有权
    垂直结构LED装置及其制造方法

    公开(公告)号：US08309970B2

    公开(公告)日：2012-11-13

    申请号：US12767324

    申请日：2010-04-26

    申请人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

    发明人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

    IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L33/0079

    摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

    摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。

    Semiconductor light emitting diode and method for manufacturing the same
    9.
    发明申请
    Semiconductor light emitting diode and method for manufacturing the same 失效
    半导体发光二极管及其制造方法

    公开(公告)号：US20070145382A1

    公开(公告)日：2007-06-28

    申请号：US11594758

    申请日：2006-11-09

    申请人： Pun Jae Choi ,  Sang Yeob Song ,  Suk Youn Hong

    发明人： Pun Jae Choi ,  Sang Yeob Song ,  Suk Youn Hong

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/24

    摘要： A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.

    摘要翻译： 提供一种高效半导体发光二极管及其制造方法。 半导体LED具有高的内部量子效率，并且可以减少由晶体缺陷引起的不良影响。 在半导体发光二极管中，导电性基板具有三维顶面，发光叠层结构具有三维结构，并且包括n型氮化物半导体层，有源层和p型 氮化物半导体层，其依次形成在导电基板上。 在p型氮化物半导体层上形成p电极，在导电性基板的底面上形成n电极。

    Vertical structure LED device and method of manufacturing the same
    10.
    发明授权
    Vertical structure LED device and method of manufacturing the same 有权
    垂直结构LED装置及其制造方法

    公开(公告)号：US07795054B2

    公开(公告)日：2010-09-14

    申请号：US11987712

    申请日：2007-12-04

    申请人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

    发明人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

    IPC分类号： H01L21/00 ,  H01L21/50 ,  H01L21/48 ,  H01L21/44

    CPC分类号： H01L33/0079

    摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

    摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。