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公开(公告)号:US12147367B2
公开(公告)日:2024-11-19
申请号:US18355660
申请日:2023-07-20
Applicant: Rambus Inc.
Inventor: Amir Amirkhany , Suresh Rajan , Ravindranath Kollipara , Ian Shaeffer , David A. Secker
Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.
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公开(公告)号:US20210124703A1
公开(公告)日:2021-04-29
申请号:US16950861
申请日:2020-11-17
Applicant: Rambus Inc.
Inventor: Amir Amirkhany , Suresh Rajan , Ravindranath Kollipara , Ian Shaeffer , David A. Secker
Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.
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公开(公告)号:US10761587B2
公开(公告)日:2020-09-01
申请号:US16193247
申请日:2018-11-16
Applicant: RAMBUS INC.
Inventor: Dinesh Patil , Amir Amirkhany , Farrukh Aquil , Kambiz Kaviani , Frederick A. Ware
IPC: G06F1/324 , G11C7/10 , G11C7/22 , G11C11/4093 , G11C11/4076 , G06F1/3234 , G06F1/3287 , G06F5/06 , G11C7/04 , H03L7/081
Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.
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公开(公告)号:US20170351282A1
公开(公告)日:2017-12-07
申请号:US15626096
申请日:2017-06-17
Applicant: Rambus Inc.
Inventor: Brian S. Leibowitz , Michael D. Bucher , Lei Luo , Chaofeng Charlie Huang , Amir Amirkhany , Huy M. Nguyen , Hsuan-Jung (Bruce) Su , John Wilson
Abstract: An integrated circuit includes a voltage regulator to supply a regulated voltage and a data output that couples to an unterminated transmission line. The circuit draws a variable amount of power from the voltage regulator according to the data. The voltage regulator includes a first current generation circuit to provide a data transition-dependent current.
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公开(公告)号:US20170097905A1
公开(公告)日:2017-04-06
申请号:US15333001
申请日:2016-10-24
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Amir Amirkhany , Suresh Rajan , Mohammad Hekmat , Dinesh Patil
CPC classification number: G06F13/1673 , G06F13/4068 , G11C5/02 , G11C7/10 , G11C7/1012 , G11C7/1021 , G11C7/106 , G11C7/1066 , G11C7/1072 , G11C7/1087 , G11C7/1093 , G11C7/222 , G11C8/18 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C11/419 , G11C29/022 , G11C29/023 , G11C29/028
Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.
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公开(公告)号:US20170052584A1
公开(公告)日:2017-02-23
申请号:US15248364
申请日:2016-08-26
Applicant: RAMBUS INC.
Inventor: Dinesh Patil , Amir Amirkhany , Farrukh Aquil , Kambiz Kaviani , Frederick A. Ware
CPC classification number: G06F1/324 , G06F1/3275 , G06F1/3287 , G06F5/065 , G06F2205/067 , G11C7/04 , G11C7/1057 , G11C7/1066 , G11C7/222 , G11C11/4076 , G11C11/4093 , G11C2207/2272 , H03L7/0816
Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.
Abstract translation: 实施例通常涉及存储器件。 在一个实施例中,存储器件包括时钟接收器电路,其接收外部时钟信号并提供内部时钟信号。 存储装置还包括具有输入的延迟锁定环路电路(DLL)和接收内部时钟信号的电路。 该电路选择内部时钟信号的哪些脉冲被施加到DLL的输入端,使得从外部时钟信号的至少三个连续脉冲中选出的不超过两个时钟脉冲在预定的时间内被施加到DLL的输入 间隔。 在另一个实施例中,一种方法包括在时钟接收器电路处接收外部时钟信号,从时钟接收器电路接收内部时钟信号,以及选择内部时钟信号的哪些脉冲被施加到DLL的输入,其中不再有 从外部时钟信号的至少三个连续脉冲中选择的两个时钟脉冲在预定间隔期间被施加到DLL的输入端。
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公开(公告)号:US09501433B2
公开(公告)日:2016-11-22
申请号:US14683080
申请日:2015-04-09
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Amir Amirkhany , Suresh Rajan , Mohammad Hekmat , Dinesh Patil
IPC: G06F13/00 , G06F13/16 , G11C7/10 , G11C8/18 , G11C11/419 , G11C7/22 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C5/02 , G11C29/02
CPC classification number: G06F13/1673 , G06F13/4068 , G11C5/02 , G11C7/10 , G11C7/1012 , G11C7/1021 , G11C7/106 , G11C7/1066 , G11C7/1072 , G11C7/1087 , G11C7/1093 , G11C7/222 , G11C8/18 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C11/419 , G11C29/022 , G11C29/023 , G11C29/028
Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.
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公开(公告)号:US09431089B2
公开(公告)日:2016-08-30
申请号:US14405910
申请日:2013-06-10
Applicant: RAMBUS INC.
Inventor: Dinesh Patil , Amir Amirkhany , Farrukh Aquil , Kambiz Kaviani , Frederick A. Ware
IPC: G11C8/00 , G11C11/4076 , G11C7/10 , G11C7/22 , G11C11/4093 , H03L7/081 , G11C7/04
CPC classification number: G06F1/324 , G06F1/3275 , G06F1/3287 , G06F5/065 , G06F2205/067 , G11C7/04 , G11C7/1057 , G11C7/1066 , G11C7/222 , G11C11/4076 , G11C11/4093 , G11C2207/2272 , H03L7/0816
Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.
Abstract translation: 实施例通常涉及存储器件。 在一个实施例中,存储器件包括时钟接收器电路,其接收外部时钟信号并提供内部时钟信号。 存储装置还包括具有输入的延迟锁定环路电路(DLL)和接收内部时钟信号的电路。 该电路选择内部时钟信号的哪些脉冲被施加到DLL的输入端,使得从外部时钟信号的至少三个连续脉冲中选出的不超过两个时钟脉冲在预定的时间内被施加到DLL的输入 间隔。 在另一个实施例中,一种方法包括在时钟接收器电路处接收外部时钟信号,从时钟接收器电路接收内部时钟信号,以及选择内部时钟信号的哪些脉冲被施加到DLL的输入,其中不再有 从外部时钟信号的至少三个连续脉冲中选择的两个时钟脉冲在预定间隔期间被施加到DLL的输入端。
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9.
公开(公告)号:US09009400B2
公开(公告)日:2015-04-14
申请号:US14023970
申请日:2013-09-11
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Amir Amirkhany , Suresh Rajan , Mohammad Hekmat , Dinesh Patil
IPC: G06F13/00 , G11C7/10 , G11C8/18 , G11C11/419 , G11C7/22 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C29/02
CPC classification number: G06F13/1673 , G06F13/4068 , G11C5/02 , G11C7/10 , G11C7/1012 , G11C7/1021 , G11C7/106 , G11C7/1066 , G11C7/1072 , G11C7/1087 , G11C7/1093 , G11C7/222 , G11C8/18 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C11/419 , G11C29/022 , G11C29/023 , G11C29/028
Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.
Abstract translation: 半导体存储器系统包括第一半导体存储器管芯和第二半导体存储器管芯。 第一半导体存储器管芯包括主数据接口,用于在写操作期间接收输入数据流,并将输入数据流反序列化为第一多个数据流,并且还包括耦合到主数据接口的辅数据接口, 发送第一多个数据流。 第二半导体存储器管芯包括耦合到第一半导体存储器管芯的次级数据接口的次级数据接口,以接收第一多个数据流。
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公开(公告)号:US08964879B2
公开(公告)日:2015-02-24
申请号:US13937549
申请日:2013-07-09
Applicant: Rambus Inc.
Inventor: Reza Navid , Amir Amirkhany , Dinesh D. Patil , Brian S. Leibowitz
CPC classification number: H04L1/0083 , H04L1/0001 , H04L1/0002 , H04L1/0007
Abstract: Data coding schemes perform level-based and/or transition-based encoding to avoid signaling conditions that create worst case crosstalk during transmission of multi-bit data from one circuit to another circuit via a parallel communication link. The coding schemes disallow certain patterns from being present in the signal levels, signal transitions, or a combination of the signal levels and signal transitions that occur in a subset of the multi-bit data that corresponds to certain physically neighboring wires of the parallel communication link.
Abstract translation: 数据编码方案执行基于电平和/或基于转换的编码,以避免在通过并行通信链路将多位数据从一个电路传输到另一电路时产生最差情况串扰的信令条件。 编码方案不允许某些模式存在于信号电平,信号转换或信号电平和信号转换的组合中,信号电平和信号转换发生在对应于并行通信链路的某些物理相邻电线的多位数据的子集中 。
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