Method for manufacturing semiconductor device

    公开(公告)号:US10395967B2

    公开(公告)日:2019-08-27

    申请号:US15628537

    申请日:2017-06-20

    Abstract: Provided is a method of manufacturing a semiconductor device with improved manufacturing efficiency for the semiconductor device. The method of manufacturing a semiconductor device includes the steps of: (a) forming a circuit at a front surface side of a wafer (semiconductor wafer) having the front surface and a back surface opposite to the front surface; (b) grinding the back surface of the wafer that has a center part (first part) and a peripheral edge part (second part) surrounding a periphery of the center part in such a manner that the center part is thinner than the peripheral edge part; (c) attaching an upper surface (bonding surface) of a holding tape to the front surface of the wafer; and (d) separating the center part from the peripheral edge part by cutting a part of the center part with a blade (rotary blade) while the wafer is held by the first tape.

    Semiconductor device and manufacturing method thereof

    公开(公告)号:US10262927B2

    公开(公告)日:2019-04-16

    申请号:US15558977

    申请日:2015-07-23

    Abstract: Reliability of a semiconductor device is improved. For this, embodied is a basic idea that a semiconductor chip (CHP1) mounted on an Ag layer (AGL) is fixed by using a temporarily fixing material (TA) having tackiness without forming the temporarily fixing material (TA) on a surface of the Ag layer (AGL) having a porous structure as much as possible, is realized. More specifically, the temporarily fixing material (TA) is supplied so as to have a portion made in contact with a chip mounting part (TAB), and the semiconductor chip (CHP1) is also mounted on the Ag layer (AGL) so that one portion of a rear surface of the semiconductor chip (CHP1) is made in contact with the temporarily fixing material (TA).

    Manufacturing method for semiconductor device and semiconductor device

    公开(公告)号:US10388597B2

    公开(公告)日:2019-08-20

    申请号:US15985957

    申请日:2018-05-22

    Abstract: A die bonding process for assembling a semiconductor device includes the steps of applying a sintered-silver-use paste to each of a plurality of first regions on an upper surface of a chip mounting part, drying the sintered-silver-use paste and applying a silver paste to a second region located between/among the respective first regions. Further, the process includes the step of mounting a semiconductor chip onto the chip mounting part in such a manner that a rear surface of the semiconductor chip faces an upper surface of the chip mounting part with the sintered-silver-use paste and the silver paste being interposed. After mounting the chip, part of each of first, second, third and fourth corners of a principal surface of the semiconductor chip is located in each of the first regions.

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