摘要:
A nonvolatile sequential machine is described which includes a semiconductor controller operable to control operation of the nonvolatile sequential machine according to a state machine comprising a plurality of states. The nonvolatile sequential machine further includes a plurality of state registers operable to store the plurality of states. The state registers comprise nonvolatile random-access memory operation of which is based on giant magnetoresistance.
摘要:
A radiation detector is described which includes first circuitry having at least one operational parameter associated therewith which is operable to change in response to radiation exposure. Second circuitry is operable to detect a change in the at least one operational parameter based on a predetermined relation between the at least one operational parameter and at least one type of radiation. The second circuitry is also operable to encode detection information representative of the radiation exposure in response thereto.
摘要:
A radiation detector is described which includes first circuitry having at least one operational parameter associated therewith which is operable to change in response to radiation exposure. Second circuitry is operable to detect a change in the at least one operational parameter based on a predetermined relation between the at least one operational parameter and at least one type of radiation. The second circuitry is also operable to encode detection information representative of the radiation exposure in response thereto.
摘要:
A display device is described having a panel and all-metal electronics formed on a surface of the panel and operable to control operation of a plurality of basic visible elements associated with the panel.
摘要:
A three-dimensional circuit and methods for fabricating such a circuit are described. The three-dimensional circuit includes a plurality of stacked levels on a substrate. Each level includes a plurality of all-metal circuit components exhibiting giant magnetoresistance and arranged in two dimensions, the circuit further includes an interconnect for providing interconnections between the circuit components on different ones of the plurality of levels.
摘要:
A solid-state component including a network of multi-layer structures is described. Each multi-layer structure exhibits magnetoresistance and has magnetization vectors associated therewith which are operable to be switched at least in part by current-induced magnetization reversal. The solid-state component generates an output signal when the network of multi-layer structures is resistively imbalanced. The output signal corresponds to output nodes in the network and is a function of an input signal applied at input nodes in the network.
摘要:
A sample-and-hold circuit is described which includes a network of thin-film elements in a bridge configuration. Each of the thin-film elements exhibits giant magnetoresistance. The circuit also includes a plurality of conductors inductively coupled to each of the thin-film elements for applying magnetic fields thereto. The circuit is operable using the plurality of conductors to sample and store a value corresponding to an input signal.
摘要:
Methods of high resolution imaging and measuring dynamic surface effects of substrate surfaces is provided. The present invention utilizes electronic scanning with multiple scanning tunneling microscope (STM) tunnel-effect probes on an array that is stationary relative to the substrate surface. A high resolution image of the substrate surface is obtained by positioning an array of STM probes stationary relative to the substrate surface during the scanning process, selecting spatial points at which probes of the array of STM probes are to be activated, selecting times at which the selected STM probes are to be activated, activating the selected STM probes at the selected times, and measuring tunneling currents between the selected STM probes and the substrate.
摘要:
Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.