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17 条记录 (耗时 0.024 秒)

    Passivation and protection of semiconductor surface
    6.
    发明授权
    Passivation and protection of semiconductor surface 失效
    半导体表面的钝化和保护

    公开(公告)号：US5933705A

    公开(公告)日：1999-08-03

    申请号：US928762

    申请日：1997-09-12

    申请人： Randall S. Geels ,  Julian S. Osinski ,  David F. Welch ,  Donald R. Scifres

    发明人： Randall S. Geels ,  Julian S. Osinski ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： H01L33/44 ,  H01S5/028 ,  H01L21/00

    CPC分类号： H01L33/44 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282

    摘要： A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passivation and deposition of the protective layer, previously formed contact metalizations may be protected with a liftoff film or layer. A low temperature MOCVD process is used to deposit the protection layer so that the integrity of the previously deposited contact metalization is maintained. The preferred range for MOCVD deposition of the protection layer is in the range of about 300.degree. C. to about 450.degree. C. This processing temperature range is within a temperature range where stable contact metalization exists.

    摘要翻译： 化合物III-V半导体器件的表面分别被钝化和保护，通过用表面上的含硫或含硒钝化膜处理，然后沉积GaN，GaP，InGaP，GaAsP，ZnS或ZnSe 保护层。 在钝化和沉积保护层之前，预先形成的接触金属化可以用剥离膜或层保护。 使用低温MOCVD工艺沉积保护层，以保持先前沉积的接触金属化的完整性。 保护层的MOCVD沉积的优选范围在约300℃至约450℃的范围内。该处理温度范围在存在稳定的接触金属化的温度范围内。

    Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films
    7.
    发明授权
    Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films 失效
    在外延铁电氧化膜生长期间和之后复制周期性非线性系数图案的方法

    公开(公告)号：US5654229A

    公开(公告)日：1997-08-05

    申请号：US430005

    申请日：1995-04-26

    申请人： Florence E. Leplingard ,  John J. Kingston ,  Ross D. Bringans ,  David K. Fork ,  Robert G. Waarts ,  David F. Welch ,  Randall S. Geels

    发明人： Florence E. Leplingard ,  John J. Kingston ,  Ross D. Bringans ,  David K. Fork ,  Robert G. Waarts ,  David F. Welch ,  Randall S. Geels

    IPC分类号： G02F1/37 ,  G02F1/355 ,  H01S3/109 ,  H01L21/20

    CPC分类号： G02F1/3558 ,  Y10S117/918

    摘要： A method for providing an nonlinear, frequency converting optical QPM waveguide device by growing a first ferroelectric oxide film or layer on a second ferroelectric layer or medium wherein, in first and second embodiments, respectively, the second layer is initially provided with a periodic nonlinear coefficient pattern or a periodic pattern comprising a seed layer. During the growth of the first layer, the periodic pattern formed in the second layer, is replicated, transformed or induced into the first layer resulting in a plurality of substantially rectangular prismatic-shaped domains in the first layer having the periodic nonlinear coefficient pattern status based upon the periodic patterning of the second layer. In a third embodiment, the periodic nonlinear coefficient pattern may be introduced into the first layer after completion of its growth, and the periodic nonlinear coefficient pattern status of the first layer, at the interface between the first and second layers, is transposed or migrated into the second layer forming a plurality of substantially rectangular prismatic-shaped domains in the second layer having the periodic nonlinear coefficient pattern status of the first layer. In the first and second embodiments, the optical QPM waveguide is the first layer and in the third embodiment, the optical QPM waveguide is the second layer.

    摘要翻译： 一种用于通过在第二铁电层或介质上生长第一铁电氧化物膜或层的非线性频率转换光QPM波导器件的方法，其中在第一和第二实施例中，第二层分别开始提供周期性非线性系数 图案或包括种子层的周期性图案。 在第一层的生长期间，形成在第二层中的周期性图案被复制，变换或诱导成第一层，从而在第一层中形成多个具有基于周期性非线性系数模式状态的基本上矩形的棱柱形结构域 在第二层的周期性图案化时。 在第三实施例中，周期性非线性系数模式可以在其生长完成之后被引入第一层，并且第一层和第二层之间的界面处的第一层的周期性非线性系数模式状态被转置或迁移 所述第二层在所述第二层中形成具有所述第一层的周期性非线性系数图案状态的多个基本上矩形的棱柱形域。 在第一和第二实施例中，光QPM波导是第一层，在第三实施例中，光QPM波导是第二层。

    Passivation and protection of a semiconductor surface
    8.
    发明授权
    Passivation and protection of a semiconductor surface 失效
    半导体表面的钝化和保护

    公开(公告)号：US5799028A

    公开(公告)日：1998-08-25

    申请号：US683495

    申请日：1996-07-18

    申请人： Randall S. Geels ,  Julian S. Osinski ,  David F. Welch ,  Donald R. Scifres

    发明人： Randall S. Geels ,  Julian S. Osinski ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： H01L33/44 ,  H01S5/028 ,  H01S3/19

    CPC分类号： H01L33/44 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282

    摘要： A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passivation and deposition of the protective layer, previously formed contact metalizations may be protected with a liftoff film or layer. A low temperature MOCVD process is used to deposit the protection layer so that the integrity of the previously deposited contact metalization is maintained. The preferred range for MOCVD deposition of the protection layer is in the range of about 300.degree. C. to about 450.degree. C. This processing temperature range is within a temperature range where stable contact metalization exists.

    摘要翻译： 化合物III-V半导体器件的表面分别被钝化和保护，通过用表面上的含硫或含硒钝化膜处理，然后沉积GaN，GaP，InGaP，GaAsP，ZnS或ZnSe 保护层。 在钝化和沉积保护层之前，预先形成的接触金属化可以用剥离膜或层保护。 使用低温MOCVD工艺沉积保护层，以保持先前沉积的接触金属化的完整性。 保护层的MOCVD沉积的优选范围在约300℃至约450℃的范围内。该处理温度范围在存在稳定的接触金属化的温度范围内。