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17 条记录 (耗时 0.021 秒)

    Rapid and accurate end point detection in a noisy environment
    3.
    发明授权
    Rapid and accurate end point detection in a noisy environment 有权
    在嘈杂的环境中快速准确的终点检测

    公开(公告)号：US06172756B2

    公开(公告)日：2001-01-09

    申请号：US09210140

    申请日：1998-12-11

    申请人： Scott A. Chalmers ,  Randall S. Geels

    发明人： Scott A. Chalmers ,  Randall S. Geels

    IPC分类号： G01B1102

    CPC分类号： B24B37/013 ,  B24B49/02 ,  B24B49/12 ,  G01B11/0683

    摘要： Methods and apparatus for film measurement and endpoint detection in a noisy environment, such as CMP processing of semiconductor wafers, are disclosed, characterized by the use of spectral analysis of intensity data derived from light reflected off the sample to estimate film thickness or detect an endpoint condition.

    摘要翻译： 公开了在诸如半导体晶片的CMP处理的噪声环境中的膜测量和端点检测的方法和装置，其特征在于使用从样品反射的光导出的强度数据的光谱分析来估计膜厚度或检测端点 条件。

    Thin-film metrology using spectral reflectance with an intermediate in-line reference
    4.
    发明授权
    Thin-film metrology using spectral reflectance with an intermediate in-line reference 有权
    薄膜测量采用光谱反射率与中间的在线参考

    公开(公告)号：US07502119B2

    公开(公告)日：2009-03-10

    申请号：US11699262

    申请日：2007-01-29

    申请人： Scott A. Chalmers ,  Randall S. Geels

    发明人： Scott A. Chalmers ,  Randall S. Geels

    IPC分类号： G01B9/02

    CPC分类号： G01B11/0625 ,  G01N21/274 ,  G01N2021/4742 ,  G01N2021/8427

    摘要： Reflectance systems and methods are described that use information of an intermediate reference signal to continuously monitor, detect and/or compensate for drift in a metrology system. The intermediate reference signal is present regardless of whether a sample is being measured. The reflectance system comprises components including a transmission element coupled to a sample area and a receiver. The transmission element is configured to route signals between components of the system. The signals include an illumination signal, and a sample signal resulting from interaction of the illumination signal with a sample when the sample is present in the sample area. The signals also include the reference signal that results from interaction of the illumination signal with one or more components of the system.

    摘要翻译： 描述了使用中间参考信号的信息来连续监视，检测和/或补偿计量系统中的漂移的反射系统和方法。 无论样品是否被测量，都存在中间参考信号。 反射系统包括包括耦合到采样区域的传输元件和接收器的部件。 传输元件被配置为在系统的组件之间路由信号。 信号包括照明信号和当样品存在于样品区域中时照明信号与样品的相互作用产生的采样信号。 信号还包括由照明信号与系统的一个或多个部件的相互作用产生的参考信号。

    Thin-film metrology using spectral reflectance with an intermediate in-line reference
    5.
    发明申请
    Thin-film metrology using spectral reflectance with an intermediate in-line reference 有权
    薄膜测量采用光谱反射率与中间的在线参考

    公开(公告)号：US20080180684A1

    公开(公告)日：2008-07-31

    申请号：US11699262

    申请日：2007-01-29

    申请人： Scott A. Chalmers ,  Randall S. Geels

    发明人： Scott A. Chalmers ,  Randall S. Geels

    IPC分类号： G01B11/02

    CPC分类号： G01B11/0625 ,  G01N21/274 ,  G01N2021/4742 ,  G01N2021/8427

    摘要： Reflectance systems and methods are described that use information of an intermediate reference signal to continuously monitor, detect and/or compensate for drift in a metrology system. The intermediate reference signal is present regardless of whether a sample is being measured. The reflectance system comprises components including a transmission element coupled to a sample area and a receiver. The transmission element is configured to route signals between components of the system. The signals include an illumination signal, and a sample signal resulting from interaction of the illumination signal with a sample when the sample is present in the sample area. The signals also include the reference signal that results from interaction of the illumination signal with one or more components of the system.

    摘要翻译： 描述了使用中间参考信号的信息来连续监视，检测和/或补偿计量系统中的漂移的反射系统和方法。 无论样品是否被测量，都存在中间参考信号。 反射系统包括包括耦合到采样区域的传输元件和接收器的部件。 传输元件被配置为在系统的组件之间路由信号。 信号包括照明信号和当样品存在于样品区域中时照明信号与样品的相互作用产生的采样信号。 信号还包括由照明信号与系统的一个或多个部件的相互作用产生的参考信号。

    Method and apparatus for high-speed thickness mapping of patterned thin films
    6.
    发明授权
    Method and apparatus for high-speed thickness mapping of patterned thin films 失效

    公开(公告)号：US07095511B2

    公开(公告)日：2006-08-22

    申请号：US09899383

    申请日：2001-07-03

    申请人： Scott A. Chalmers ,  Randall S. Geels

    发明人： Scott A. Chalmers ,  Randall S. Geels

    IPC分类号： G01B11/28

    CPC分类号： G03F7/70483 ,  G01B11/0625 ,  G01N21/55 ,  G01N21/8422 ,  G01N21/9501

    摘要： A system is described that permits high-speed, high-resolution mapping of thicknesses (or other properties) of layers on patterned semiconductor wafers. The system comprises one or more spectrometers that each simultaneously image a plurality of spatial locations. In one example, the spectrometer comprises a two-dimensional CCD imager with one axis of the imager measuring spectral data and the other axis measuring spatial data. Spectral reflectance or transmission of the patterned wafer under test is obtained by passing the wafer under (or over) the imaging spectrometer(s) and taking sequential reflectance or transmission images for successive pluralities of spatial locations. The resulting spectral reflectance or transmission map can then be analyzed at discrete locations to determine the thicknesses or other properties of the layers at those locations.

    Passivation and protection of semiconductor surface
    10.
    发明授权
    Passivation and protection of semiconductor surface 失效
    半导体表面的钝化和保护

    公开(公告)号：US5933705A

    公开(公告)日：1999-08-03

    申请号：US928762

    申请日：1997-09-12

    申请人： Randall S. Geels ,  Julian S. Osinski ,  David F. Welch ,  Donald R. Scifres

    发明人： Randall S. Geels ,  Julian S. Osinski ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： H01L33/44 ,  H01S5/028 ,  H01L21/00

    CPC分类号： H01L33/44 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282

    摘要： A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passivation and deposition of the protective layer, previously formed contact metalizations may be protected with a liftoff film or layer. A low temperature MOCVD process is used to deposit the protection layer so that the integrity of the previously deposited contact metalization is maintained. The preferred range for MOCVD deposition of the protection layer is in the range of about 300.degree. C. to about 450.degree. C. This processing temperature range is within a temperature range where stable contact metalization exists.

    摘要翻译： 化合物III-V半导体器件的表面分别被钝化和保护，通过用表面上的含硫或含硒钝化膜处理，然后沉积GaN，GaP，InGaP，GaAsP，ZnS或ZnSe 保护层。 在钝化和沉积保护层之前，预先形成的接触金属化可以用剥离膜或层保护。 使用低温MOCVD工艺沉积保护层，以保持先前沉积的接触金属化的完整性。 保护层的MOCVD沉积的优选范围在约300℃至约450℃的范围内。该处理温度范围在存在稳定的接触金属化的温度范围内。