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35 条记录 (耗时 0.042 秒)

    Substrate monitoring method and apparatus
    2.
    发明授权
    Substrate monitoring method and apparatus 失效
    基板监控方法及装置

    公开(公告)号：US06824813B1

    公开(公告)日：2004-11-30

    申请号：US09545110

    申请日：2000-04-06

    申请人： Thorsten B. Lill ,  Michael N. Grimbergen ,  Jitske Trevor ,  Wei-Nan Jiang ,  Jeffrey Chinn

    发明人： Thorsten B. Lill ,  Michael N. Grimbergen ,  Jitske Trevor ,  Wei-Nan Jiang ,  Jeffrey Chinn

    IPC分类号： H05H100

    CPC分类号： H01J37/32935 ,  C23C16/401 ,  G01B11/0625 ,  G01B11/0683

    摘要： A substrate processing apparatus comprises a chamber 28 capable of processing a substrate 20. A radiation source 58 provides radiation that is at least partially reflected from the substrate in the chamber. A radiation detector 62 is provided to detect the reflected radiation and generate a signal. A controller 100 is adapted to receive the signal and determine a property of the substrate 20 in situ during processing, before an onset of during or after processing of a material on the substrate 20.

    摘要翻译： 衬底处理设备包括能够处理衬底20的腔室28.辐射源58提供至少部分地从腔室中的衬底反射的辐射。 提供辐射检测器62以检测反射的辐射并产生信号。 控制器100适于在处理期间在衬底20上的材料处理之前或之后开始时接收信号并确定衬底20的特性。

    Process for etching silicon-containing material on substrates
    3.
    发明授权
    Process for etching silicon-containing material on substrates 失效
    在基板上蚀刻含硅材料的工艺

    公开(公告)号：US06322714B1

    公开(公告)日：2001-11-27

    申请号：US09116621

    申请日：1998-07-16

    申请人： Padmapani Nallan ,  Jeffrey Chinn ,  Stephen Yuen

    发明人： Padmapani Nallan ,  Jeffrey Chinn ,  Stephen Yuen

    IPC分类号： H01L213065

    CPC分类号： H01L21/02071 ,  H01L21/32137 ,  Y10S438/905

    摘要： A method of etching a silicon-containing layer 170 on a substrate 45 comprises the steps of placing the substrate 45 on a support 75 in a process chamber 50. The substrate 45 is exposed to an energized process gas comprising a bromine-containing gas, a chlorine-containing gas, an inorganic fluorinated gas, and an oxygen gas. The volumetric flow ratio of the gas constituents is selected so that the energized process gas etches regions 180a,b having different concentrations of dopant in the polysilicon layer 170 at substantially the same etching rate. Optionally, the gas composition is also tailored to simultaneously clean off etch residue from the internal surfaces of a process chamber 50 during etching of the substrate 45.

    摘要翻译： 蚀刻衬底45上的含硅层170的方法包括以下步骤：将衬底45放置在处理室50中的支撑件75上。衬底45暴露于包含含溴气体， 含氯气体，无机氟化气体和氧气。 选择气体组分的体积流量比，使得通电处理气体以基本上相同的蚀刻速率蚀刻多晶硅层170中具有不同浓度掺杂剂的区域180a，b。 任选地，气体组合物还被定制成在蚀刻基板45期间同时从处理室50的内表面清除蚀刻残留物。

    Functional organic based vapor deposited coatings adhered by an oxide layer
    5.
    发明申请
    Functional organic based vapor deposited coatings adhered by an oxide layer 审中-公开
    由氧化物层附着的功能性有机基气相沉积涂层

    公开(公告)号：US20070020392A1

    公开(公告)日：2007-01-25

    申请号：US11528093

    申请日：2006-09-26

    申请人： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

    发明人： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

    IPC分类号： C23C16/00 ,  B05D1/36 ,  B05D3/00

    CPC分类号： C23C16/455 ,  B05D1/185 ,  B05D1/60 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/42 ,  C03C23/006 ,  C23C16/402 ,  C23C16/448

    摘要： An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.

    摘要翻译： 描述了一种用于在基底上施加多层膜/涂层的改进的气相沉积方法和装置。 该方法用于沉积与衬底直接接触的氧化物基层的厚度作为衬底的化学组成的函数来控制多层涂层，由此随后沉积的层更好地结合到氧化物基层。 改进的方法用于沉积多层涂层，其中氧化物基层直接沉积在衬底上，并且基于有机的层直接沉积在基于氧化物的层上。 通常，施加一系列交替层的氧化物基层和基于有机层。

    High aspect ratio performance coatings for biological microfluidics
    6.
    发明申请
    High aspect ratio performance coatings for biological microfluidics 有权
    用于生物微流体的高纵横比性能涂料

    公开(公告)号：US20050271810A1

    公开(公告)日：2005-12-08

    申请号：US11048513

    申请日：2005-01-31

    申请人： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

    发明人： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

    IPC分类号： C23C16/00 ,  C23C16/02 ,  C23C16/40

    CPC分类号： C23C16/402 ,  B05D1/185 ,  B05D1/60 ,  B05D5/04 ,  B05D7/22 ,  B05D7/222 ,  B05D2254/04 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/045 ,  Y10T29/49432 ,  Y10T428/1383 ,  Y10T436/11

    摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biotechnologically functional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, oxide coatings providing hydrophilicity or oxide/polyethylene glycol coatings providing hydrophilicity can be deposited by the present method, over the interior surfaces of small wells in a plastic micro-plate in order to increase the hydrophilicity of these wells. Filling these channels with a precise amount of liquid consistently can be very difficult. This prevents a water-based sample from beading up and creating bubbles, so that well can fill accurately and completely, and alleviates spillage into other wells which causes contamination.

    摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在各种基底上施加层和涂层。 该方法和装置可用于制造生物技术功能器件，生物MEMS装置以及用于生物应用的微流体装置的制造。 在一个重要的实施方案中，提供亲水性的氧化物涂层或提供亲水性的氧化物/聚乙二醇涂层可以通过本方法在塑料微板的小孔的内表面上沉积，以增加这些孔的亲水性。 用一定量的液体填充这些通道可能非常困难。 这样可以防止水性样品卷入并产生气泡，从而可以精确和完全地填充，并减轻溢出到其他导致污染的孔中。

    Substrate carrier for processing substrates
    7.
    发明申请
    Substrate carrier for processing substrates 审中-公开
    用于处理衬底的衬底载体

    公开(公告)号：US20050241771A1

    公开(公告)日：2005-11-03

    申请号：US11175750

    申请日：2005-07-06

    申请人： Michael Rattner ,  Rolf Guenther ,  Jeffrey Chinn

    发明人： Michael Rattner ,  Rolf Guenther ,  Jeffrey Chinn

    IPC分类号： H01L21/00 ,  H01L21/687 ,  C23F1/00

    CPC分类号： H01L21/68735 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/68757

    摘要： A substrate carrier for carrying one or more substrates comprises a bottom surface, a top surface opposed to the bottom surface, one or more recesses formed into the top surface, each of the one or more recesses having a support surface that defines a support region for a substrate. The support region is adapted to contact a bottom of the substrate. The support region may have a thickness less than a depth of the one or more recesses. The support region may comprise a porous material to permit thermal fluid to percolate through the support region.

    摘要翻译： 用于承载一个或多个衬底的衬底载体包括底表面，与底表面相对的顶表面，形成在顶表面中的一个或多个凹槽，所述一个或多个凹槽中的每一个具有支撑表面，该支撑表面限定用于 底物。 支撑区域适于接触基底的底部。 支撑区域可以具有小于一个或多个凹部的深度的厚度。 支撑区域可以包括多孔材料，以允许热流体渗透通过支撑区域。

    Method for etching an anti-reflective coating
    8.
    发明授权
    Method for etching an anti-reflective coating 失效
    蚀刻抗反射涂层的方法

    公开(公告)号：US06518206B1

    公开(公告)日：2003-02-11

    申请号：US09566686

    申请日：2000-05-08

    申请人： Ajay Kumar ,  Jeffrey Chinn

    发明人： Ajay Kumar ,  Jeffrey Chinn

    IPC分类号： H01L21302

    CPC分类号： H01L21/31116 ,  H01L21/0276 ,  H01L21/32137 ,  H01L21/32139 ,  Y10S438/952

    摘要： A method for etching and removing an anti-reflective coating from a substrate. The method comprises providing a substrate supporting a conductive layer (a tungsten-silicide layer) having an anti-reflective coating (e.g., a dielectric anti-reflective coating) disposed thereon. The anti-reflective coating is etched with an etchant gas consisting of NF3 and Cl2 to break through and to remove at least a portion of the anti-reflective coating to expose at least part of the conductive layer. The conductive layer is subsequently etched with the etchant gas to produce an anti-reflective coating gate structure which is used in semiconductor integrated circuits containing transistors.

    摘要翻译： 一种用于从基板上蚀刻和去除抗反射涂层的方法。 该方法包括提供支撑导电层（硅化钨层）的衬底，其具有设置在其上的抗反射涂层（例如，电介质抗反射涂层）。 用由NF 3和Cl 2组成的蚀刻剂气体蚀刻抗反射涂层，以穿透并除去至少一部分抗反射涂层以暴露至少部分导电层。 随后用蚀刻剂气体蚀刻导电层以产生用于包含晶体管的半导体集成电路中的抗反射涂层栅极结构。

    Controlled vapor deposition of biocompatible coatings over surface-treated substrates
    10.
    发明申请
    Controlled vapor deposition of biocompatible coatings over surface-treated substrates 有权
    经表面处理的基材上生物相容性涂层的控制气相沉积

    公开(公告)号：US20060088666A1

    公开(公告)日：2006-04-27

    申请号：US11295129

    申请日：2005-12-05

    申请人： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak

    发明人： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak

    IPC分类号： C23C16/00

    CPC分类号： B05D1/60 ,  B05D3/064 ,  B82Y30/00

    摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biofunctional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, a siloxane substrate surface is treated using a combination of ozone and UV radiation to render the siloxane surface more hydrophilic, and subsequently a functional coating is applied in-situ over the treated surface of the siloxane substrate.

    摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在各种基底上施加层和涂层。 该方法和装置可用于制造生物功能装置，生物MEMS装置以及制造用于生物应用的微流体装置。 在一个重要的实施方案中，使用臭氧和UV辐射的组合处理硅氧烷底物表面，以使硅氧烷表面更亲水，随后在硅氧烷底物的处理表面上原位施加功能性涂层。