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公开(公告)号:US06713770B2
公开(公告)日:2004-03-30
申请号:US10098975
申请日:2002-03-15
申请人: Richard L. Sandstrom , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Scott T. Smith , Daniel J. W. Brown
发明人: Richard L. Sandstrom , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Scott T. Smith , Daniel J. W. Brown
IPC分类号: G01J314
CPC分类号: G01J3/26 , G01J1/4257 , G01J3/02 , G01J3/0205 , G01J3/12 , G01J3/1804 , G01J3/22 , G01J9/02
摘要: A high resolution spectral measurement device. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow-band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034 pm (FWHM) and about 0.091 pm (95 percent integral). The bandwidth of a laser beam can be measured very accurately by a directing portion of the laser beam into the insulator and scanning the laser wavelength over a range which includes the monochromator slit wavelength. In a second embodiment the second slit and the light detector is replaced by a photodiod array and the bandwidth of a laser beam is determined by analyzing a set of scan data from the photodiode array. Alternately, the laser wavelength can be fixed near the middle of the spectrum range of the grating spectrometer, and the etalon can be scanned.
摘要翻译: 高分辨率光谱测量装置。 优选的实施例在紫外线范围内呈现非常窄的狭缝功能,并且对于测量用于集成电路光刻的窄带准分子激光器的带宽是非常有用的。 来自激光的光被聚焦成漫射器,并且离开扩散器的漫射光照射标准具。 将其从标准具出射的光的一部分收集并引导到位于标准具的边缘图案处的狭缝中。 通过狭缝的光线被准直,并且准直光照射位于大约Littrow配置中的光栅,其根据波长散发光。 表示对应于所选择的标准具条纹的波长的调度光的一部分通过第二狭缝并由光检测器监视。 当标准具和光栅调谐到相同的精确波长时,定义狭缝功能,其极窄,例如约0.034μm(FWHM)和约0.091μm(95%积分)。 通过激光束的引导部分进入绝缘体并且在包括单色器狭缝波长的范围内扫描激光波长,可以非常精确地测量激光束的带宽。 在第二实施例中,第二狭缝和光检测器由光电二极管阵列替代,并且通过分析来自光电二极管阵列的一组扫描数据来确定激光束的带宽。 或者,激光波长可以固定在光栅光谱仪的光谱范围附近,可以扫描标准具。
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公开(公告)号:US06625191B2
公开(公告)日:2003-09-23
申请号:US10012002
申请日:2001-11-30
申请人: David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scott T. Smith , William G. Hulburd , Jeffrey Oicles
发明人: David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scott T. Smith , William G. Hulburd , Jeffrey Oicles
IPC分类号: H01S322
CPC分类号: G01J1/4257 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/005 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333 , H01S3/2366
摘要: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.
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公开(公告)号:US06480275B2
公开(公告)日:2002-11-12
申请号:US09772293
申请日:2001-01-29
申请人: Richard L. Sandstrom , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Scott T. Smith
发明人: Richard L. Sandstrom , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Scott T. Smith
IPC分类号: G01J318
CPC分类号: G01J3/12 , G01J1/4257 , G01J3/22 , G01J3/26 , G01J9/02
摘要: A high resolution etalon-grating monochromator. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034 pm (FWHM) and about 0.091 pm (95 percent integral). The bandwidth of a laser beam can be measured very accurately by a directing portion of the laser beam into the monochromator and scanning the laser wavelength over a range which includes the monochromator slit wavelength.
摘要翻译: 高分辨率标准光栅单色仪。 优选的实施例在紫外范围内呈现非常狭窄的狭缝功能,并且对于测量用于集成电路光刻的窄带准分子激光器的带宽是非常有用的。 来自激光的光被聚焦成漫射器,并且离开扩散器的漫射光照射标准具。 将其从标准具出射的光的一部分收集并引导到位于标准具的边缘图案处的狭缝中。 通过狭缝的光线被准直,并且准直光照射位于大约Littrow配置中的光栅,其根据波长散发光。 表示对应于所选择的标准具条纹的波长的调度光的一部分通过第二狭缝并由光检测器监视。 当标准具和光栅调谐到相同的精确波长时,定义狭缝功能,其极窄,例如约0.034μm(FWHM)和约0.091μm(95%积分)。 激光束的带宽可以通过激光束的引导部分进入单色仪并且在包括单色器狭缝波长的范围内扫描激光波长而被非常精确地测量。
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公开(公告)号:US07058107B2
公开(公告)日:2006-06-06
申请号:US10804281
申请日:2004-03-18
申请人: David S. Knowles , Daniel J. W. Brown , Richard L. Sandstrom , German E. Rylov , Eckehard D. Onkels , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Richard C. Ujazdowski , Richard M. Ness , Scott T. Smith , William G. Hulburd
发明人: David S. Knowles , Daniel J. W. Brown , Richard L. Sandstrom , German E. Rylov , Eckehard D. Onkels , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Richard C. Ujazdowski , Richard M. Ness , Scott T. Smith , William G. Hulburd
IPC分类号: H01S3/22
CPC分类号: H01S3/2366 , G01J9/00 , G03F7/70025 , G03F7/70041 , G03F7/70575 , G03F7/70933 , H01S3/0057 , H01S3/0071 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1305 , H01S3/134 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333
摘要: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F2 spectral line.
摘要翻译: 一种注射种子模块化气体放电激光系统,其能够以约4,000Hz或更大的脉冲速率和约5mJ或更大的脉冲能量产生高质量的脉冲激光束。 提供两个单独的放电室,其中之一是主振荡器的一部分,其产生在第二放电室中放大的非常窄的带状晶体束。 可以单独控制室,允许主振荡器中的波长参数的单独优化和放大室中的脉冲能量参数的优化。 配置为MOPA并被专门设计用作集成电路光刻的光源的F 2 N 2激光系统中的优选实施例。 在优选的MOPA实施例中,每个腔室包括单个切向风扇,其通过在比脉冲之间的大约0.25毫秒更短的时间内清除来自放电区域的碎屑来提供足够的气流以允许以4000Hz或更高的脉冲速率操作。 主振荡器配备有用于选择最强的F 2/2谱线的线选择包。
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5.
公开(公告)号:US06985508B2
公开(公告)日:2006-01-10
申请号:US10627215
申请日:2003-07-24
申请人: David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Meyers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scott T. Smith , William G. Hulburd , Jeffrey Oicles
发明人: David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Meyers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scott T. Smith , William G. Hulburd , Jeffrey Oicles
IPC分类号: H01S3/22
CPC分类号: G01J1/4257 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/005 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333 , H01S3/2366
摘要: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.
摘要翻译: 一种注射种子模块化气体放电激光系统,其能够以约4,000Hz或更大的脉冲速率和约5mJ或更大的脉冲能量产生高质量的脉冲激光束。 提供两个单独的放电室,其中之一是主振荡器的一部分,其产生在第二放电室中放大的非常窄的带状晶体束。 可以单独控制室,允许主振荡器中的波长参数的单独优化和放大室中的脉冲能量参数的优化。 配置为MOPA并被专门用于集成电路光刻的光源的ArF准分子激光系统中的优选实施例。 在优选的MOPA实施例中,每个腔室包括单个切向风扇,其通过在比脉冲之间的大约0.25毫秒更短的时间内清除来自放电区域的碎屑来提供足够的气流以允许以4000Hz或更高的脉冲速率操作。 主振荡器配备有具有非常快的调谐镜的线窄化封装,能够以4000Hz或更高的重复频率在脉冲到脉冲的基础上控制中心线波长,精度小于0.2μm。
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公开(公告)号:US06801560B2
公开(公告)日:2004-10-05
申请号:US10056619
申请日:2002-01-23
申请人: David S. Knowles , Daniel J. W. Brown , Richard L. Sandstrom , German E. Rylov , Eckehard D. Onkels , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Richard C. Ujazdowski , Richard M. Ness , Scott T. Smith , William G. Hulburd
发明人: David S. Knowles , Daniel J. W. Brown , Richard L. Sandstrom , German E. Rylov , Eckehard D. Onkels , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Richard C. Ujazdowski , Richard M. Ness , Scott T. Smith , William G. Hulburd
IPC分类号: H01S322
CPC分类号: H01S3/2366 , G01J9/00 , G03F7/70025 , G03F7/70041 , G03F7/70575 , G03F7/70933 , H01S3/0057 , H01S3/0071 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1305 , H01S3/134 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333
摘要: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F2 spectral line.
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公开(公告)号:US08075732B2
公开(公告)日:2011-12-13
申请号:US10979945
申请日:2004-11-01
申请人: William N. Partlo , Richard L. Sandstrom , Igor V. Fomenkov , Alexander I. Ershov , William Oldham , William F. Marx , Oscar Hemberg
发明人: William N. Partlo , Richard L. Sandstrom , Igor V. Fomenkov , Alexander I. Ershov , William Oldham , William F. Marx , Oscar Hemberg
IPC分类号: C23F1/00
CPC分类号: B08B7/00
摘要: A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
摘要翻译: 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置,所述EUV等离子体源材料包括将形成蚀刻化合物的材料,所述等离子体源材料在所选择的中心波长周围的带内产生EUV光,包括:EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面,该反射表面包含至少一层,该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料,等离子体源材料与蚀刻剂源材料形成蚀刻化合物,该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。
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公开(公告)号:US20110102759A1
公开(公告)日:2011-05-05
申请号:US12987039
申请日:2011-01-07
申请人: Alexander I. Ershov , William N. Partlo , Daniel J. W. Brown , Igor V. Fomenkov , Robert A. Bergstedt , Richard L. Sandstrom , Ivan Lalovic
发明人: Alexander I. Ershov , William N. Partlo , Daniel J. W. Brown , Igor V. Fomenkov , Robert A. Bergstedt , Richard L. Sandstrom , Ivan Lalovic
IPC分类号: G03B27/54
CPC分类号: H01S3/225 , H01S3/005 , H01S3/0057 , H01S3/08004 , H01S3/08009 , H01S3/083 , H01S3/10092 , H01S3/2251 , H01S3/2258 , H01S3/2333 , H01S3/2383 , H01S2301/02
摘要: A method and apparatus may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser output light beam of pulses, which may comprise a ring power amplification stage.
摘要翻译: 一种方法和装置可以包括线变窄的脉冲准分子或分子氟气放电激光系统,其可以包括种子激光振荡器,其产生包括可以包括第一气体放电准分子或分子氟激光室的脉冲的激光输出光束的输出; 第一振荡器腔内的线窄模块; 在第二气体放电准分子或分子氟激光室中包含放大增益介质的激光放大级,其接收种子激光振荡器的输出并放大种子激光振荡器的输出,以形成激光系统输出,其包括激光输出光束 脉冲,其可以包括环形功率放大级。
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公开(公告)号:US07643528B2
公开(公告)日:2010-01-05
申请号:US11973671
申请日:2007-10-10
申请人: William N. Partlo , Alexander I. Ershov , German Rylov , Igor V. Fomenkov , Daniel J. W. Brown , Christian J. Wittak , Rajasekhar M. Rao , Robert A. Bergstedt , John Fitzgerald , Richard L. Sandstrom , Vladimir B. Fleurov , Robert N. Jacques , Ed Danielewicz , Robin Swain , Edward Arriola , Michael Wyatt , Walter Crosby
发明人: William N. Partlo , Alexander I. Ershov , German Rylov , Igor V. Fomenkov , Daniel J. W. Brown , Christian J. Wittak , Rajasekhar M. Rao , Robert A. Bergstedt , John Fitzgerald , Richard L. Sandstrom , Vladimir B. Fleurov , Robert N. Jacques , Ed Danielewicz , Robin Swain , Edward Arriola , Michael Wyatt , Walter Crosby
IPC分类号: H01S3/22
CPC分类号: H01S3/0057 , G03F7/70341 , G03F7/70583
摘要: An apparatus and method which may comprise a pulsed gas discharge laser which may comprise a seed laser portion; an amplifier portion receiving the seed laser output and amplifying the optical intensity of each seed pulse; a pulse stretcher which may comprise: a first beam splitter operatively connected with the first delay path and a second pulse stretcher operatively connected with the second delay path; a first optical delay path tower containing the first beam splitter; a second optical delay path tower containing the second beam splitter; one of the first and second optical delay paths may comprise: a plurality of mirrors defining the respective optical delay path including mirrors located in the first tower and in the second tower; the other of the first and second optical delay paths may comprise: a plurality of mirrors defining the respective optical delay path including mirrors only in one of the first tower and the second tower.
摘要翻译: 一种可包括可包括种子激光器部分的脉冲气体放电激光器的装置和方法; 接收种子激光输出并放大每个种子脉冲的光强度的放大器部分; 脉冲展开器,其可以包括:与第一延迟路径可操作地连接的第一分束器和与第二延迟路径可操作地连接的第二脉冲展开器; 包含第一分束器的第一光学延迟路径塔; 包含第二分束器的第二光学延迟路径塔; 第一和第二光学延迟路径中的一个可以包括:多个反射镜,其限定相应的光学延迟路径,包括位于第一塔架和第二塔架中的反射镜; 第一和第二光学延迟路径中的另一个可以包括:多个反射镜限定相应的光学延迟路径,其仅包括在第一塔架和第二塔架之一中的镜子。
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10.
公开(公告)号:US06778584B1
公开(公告)日:2004-08-17
申请号:US09716041
申请日:2000-11-17
申请人: William N. Partlo , Richard L. Sandstrom , Raymond F. Cybulski , Igor V. Fomenkov , Alexander I. Ershov
发明人: William N. Partlo , Richard L. Sandstrom , Raymond F. Cybulski , Igor V. Fomenkov , Alexander I. Ershov
IPC分类号: H01S310
CPC分类号: G03F7/70025 , G03F7/70041 , G03F7/70575 , G03F7/70933 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0401 , H01S3/0404 , H01S3/041 , H01S3/22 , H01S3/2207 , H01S3/225
摘要: A helium purge for a grating based line narrowing device for minimizing thermal distortions in line narrowed lasers producing high energy laser beams at high repetition rates. Applicants have shown substantial improvement in performance with the uses of helium purge as compared to prior art nitrogen purges. In preferred embodiments a stream of helium gas is directed across the face of the grating. In other embodiments the purge gas pressure is reduced to reduce the optical effects of the hot gas layer.
摘要翻译: 用于基于光栅的线窄化装置的氦气吹扫,用于最大限度地减少线性窄激光器中的热失真,以高重复率产生高能激光束。 与现有技术的氮气吹扫相比,申请人已经显示出使用氦吹扫的性能方面的显着改进。在优选实施例中,氦气流被引导穿过光栅的表面。 在其它实施例中,减少吹扫气体压力以减少热气体层的光学效应。
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