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公开(公告)号:US08372670B2
公开(公告)日:2013-02-12
申请号:US12841812
申请日:2010-07-22
申请人: Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
发明人: Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
CPC分类号: H01S5/18311 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01S5/0207 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/02272 , H01S5/0425 , H01L2924/00
摘要: A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.
摘要翻译: 一种制造发光元件组件的方法,包括:具有形成在所述凹部的所述第一表面和所述内表面上的第一表面,面向所述第一表面的第二表面,凹陷部分和导电材料层的支撑基板, 和发光元件。 发光元件具有包括第一化合物半导体层,发光部和第二化合物半导体层的层叠结构,至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层,第二电极和第一电极。 台面结构被放置在凹部中,使得导电材料层和第二电极彼此至少部分接触,并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。
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公开(公告)号:US07787512B2
公开(公告)日:2010-08-31
申请号:US12333972
申请日:2008-12-12
申请人: Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
发明人: Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
IPC分类号: H01S5/00
CPC分类号: H01S5/18311 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01S5/0207 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/02272 , H01S5/0425 , H01L2924/00
摘要: A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.
摘要翻译: 发光元件组件包括具有第一表面,面向第一表面的第二表面,凹陷部分和形成在凹部的第一表面和内表面上的导电材料层的支撑基板, 发光元件。 发光元件具有包括第一化合物半导体层,发光部和第二化合物半导体层的层叠结构,至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层,第二电极和第一电极。 台面结构被放置在凹部中,使得导电材料层和第二电极彼此至少部分接触,并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。
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公开(公告)号:US20100285625A1
公开(公告)日:2010-11-11
申请号:US12841812
申请日:2010-07-22
申请人: Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
发明人: Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
IPC分类号: H01L33/00
CPC分类号: H01S5/18311 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01S5/0207 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/02272 , H01S5/0425 , H01L2924/00
摘要: A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.
摘要翻译: 一种制造发光元件组件的方法,包括:具有形成在所述凹部的所述第一表面和所述内表面上的第一表面,面向所述第一表面的第二表面,凹陷部分和导电材料层的支撑基板, 和发光元件。 发光元件具有包括第一化合物半导体层,发光部和第二化合物半导体层的层叠结构,至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层,第二电极和第一电极。 台面结构被放置在凹部中,使得导电材料层和第二电极彼此至少部分接触,并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。
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公开(公告)号:US20090168825A1
公开(公告)日:2009-07-02
申请号:US12333972
申请日:2008-12-12
申请人: Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
发明人: Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
CPC分类号: H01S5/18311 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01S5/0207 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/02272 , H01S5/0425 , H01L2924/00
摘要: A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.
摘要翻译: 发光元件组件包括具有第一表面,面向第一表面的第二表面,凹陷部分和形成在凹部的第一表面和内表面上的导电材料层的支撑基板, 发光元件。 发光元件具有包括第一化合物半导体层,发光部和第二化合物半导体层的层叠结构,至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层,第二电极和第一电极。 台面结构被放置在凹部中,使得导电材料层和第二电极彼此至少部分接触,并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。
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公开(公告)号:US20110294236A1
公开(公告)日:2011-12-01
申请号:US13137339
申请日:2011-08-08
申请人: Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
发明人: Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
IPC分类号: H01L21/66
CPC分类号: H01S5/18347 , H01L22/12 , H01L2924/0002 , H01S5/0014 , H01S5/0042 , H01S5/0202 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/423 , H01L2924/00
摘要: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.
摘要翻译: 提供了一种能够大幅提高成品率的半导体器件的制造方法以及使用该方法制造的半导体器件。 在基板上形成半导体层之后,对于每个单位芯片区域,在半导体层中形成具有至少一个参数值彼此不同的多个功能部分。 然后,对根据参数值进行变更的被摄体进行测量和评价,之后,对于每个芯片区域分割基板,使得作为评价结果的与给定标准对应的功能部分不被破坏。 由此,通过适当地调整每个参数值,可以通过每个芯片面积形成与给定标准对应的至少一个功能部分。
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公开(公告)号:US20090032908A1
公开(公告)日:2009-02-05
申请号:US11806884
申请日:2007-06-05
申请人: Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
发明人: Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
CPC分类号: H01S5/18347 , H01L22/12 , H01L2924/0002 , H01S5/0014 , H01S5/0042 , H01S5/0202 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/423 , H01L2924/00
摘要: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.
摘要翻译: 提供了一种能够大幅提高成品率的半导体器件的制造方法以及使用该方法制造的半导体器件。 在基板上形成半导体层之后,对于每个单位芯片区域,在半导体层中形成具有至少一个参数值彼此不同的多个功能部分。 然后,对根据参数值进行变更的被摄体进行测量和评价,之后,对于每个芯片区域分割基板,使得作为评价结果的与给定标准对应的功能部分不被破坏。 由此,通过适当地调整每个参数值,可以通过每个芯片面积形成与给定标准对应的至少一个功能部分。
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公开(公告)号:US08497141B2
公开(公告)日:2013-07-30
申请号:US13137339
申请日:2011-08-08
申请人: Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
发明人: Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
CPC分类号: H01S5/18347 , H01L22/12 , H01L2924/0002 , H01S5/0014 , H01S5/0042 , H01S5/0202 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/423 , H01L2924/00
摘要: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.
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公开(公告)号:US08022424B2
公开(公告)日:2011-09-20
申请号:US11806884
申请日:2007-06-05
申请人: Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
发明人: Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
IPC分类号: H01L33/14
CPC分类号: H01S5/18347 , H01L22/12 , H01L2924/0002 , H01S5/0014 , H01S5/0042 , H01S5/0202 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/423 , H01L2924/00
摘要: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.
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公开(公告)号:US08027370B2
公开(公告)日:2011-09-27
申请号:US12656165
申请日:2010-01-20
申请人: Yuji Masui , Takahiro Arakida , Kayoko Kikuchi , Terukazu Naruse , Tomoyuki Oki , Naoki Jogan
发明人: Yuji Masui , Takahiro Arakida , Kayoko Kikuchi , Terukazu Naruse , Tomoyuki Oki , Naoki Jogan
CPC分类号: H01S5/02276 , B82Y20/00 , H01S5/0425 , H01S5/06226 , H01S5/18311 , H01S5/1835 , H01S5/34313 , H01S2301/176
摘要: The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.
摘要翻译: 本发明提供一种半导体器件,其实现了低介电常数材料与半导体材料之间的粘合性的改善。 半导体器件在半导体层上包括从半导体层侧开始的粘合层和低介电常数材料层。 粘合层具有突出/凹陷结构,并且形成低介电常数材料层以便在突出/凹陷结构中埋入间隙。
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公开(公告)号:US20100202482A1
公开(公告)日:2010-08-12
申请号:US12656165
申请日:2010-01-20
申请人: Yuji Masui , Takahiro Arakida , Kayoko Kikuchi , Terukazu Naruse , Tomoyuki Oki , Naoki Jogan
发明人: Yuji Masui , Takahiro Arakida , Kayoko Kikuchi , Terukazu Naruse , Tomoyuki Oki , Naoki Jogan
IPC分类号: H01S5/02
CPC分类号: H01S5/02276 , B82Y20/00 , H01S5/0425 , H01S5/06226 , H01S5/18311 , H01S5/1835 , H01S5/34313 , H01S2301/176
摘要: The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.
摘要翻译: 本发明提供一种半导体器件,其实现了低介电常数材料与半导体材料之间的粘合性的改善。 半导体器件在半导体层上包括从半导体层侧开始的粘合层和低介电常数材料层。 粘合层具有突出/凹陷结构,并且形成低介电常数材料层以便在突出/凹陷结构中埋入间隙。
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