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    Light-emitting element assembly and method for manufacturing the same
    1.
    发明授权
    Light-emitting element assembly and method for manufacturing the same 有权
    发光元件组件及其制造方法

    公开(公告)号：US08372670B2

    公开(公告)日：2013-02-12

    申请号：US12841812

    申请日：2010-07-22

    申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

    发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

    IPC分类号： G01R31/26 ,  H01L21/66

    CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

    摘要： A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

    摘要翻译： 一种制造发光元件组件的方法，包括：具有形成在所述凹部的所述第一表面和所述内表面上的第一表面，面向所述第一表面的第二表面，凹陷部分和导电材料层的支撑基板， 和发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

    LIGHT-EMITTING ELEMENT ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    LIGHT-EMITTING ELEMENT ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME 有权
    发光元件组件及其制造方法

    公开(公告)号：US20100285625A1

    公开(公告)日：2010-11-11

    申请号：US12841812

    申请日：2010-07-22

    申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

    发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

    IPC分类号： H01L33/00

    CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

    摘要： A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

    摘要翻译： 一种制造发光元件组件的方法，包括：具有形成在所述凹部的所述第一表面和所述内表面上的第一表面，面向所述第一表面的第二表面，凹陷部分和导电材料层的支撑基板， 和发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

    Semiconductor device and method of manufacturing it
    7.
    发明申请
    Semiconductor device and method of manufacturing it 有权
    半导体装置及其制造方法

    公开(公告)号：US20110294236A1

    公开(公告)日：2011-12-01

    申请号：US13137339

    申请日：2011-08-08

    申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

    发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

    IPC分类号： H01L21/66

    CPC分类号： H01S5/18347 ,  H01L22/12 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/423 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

    摘要翻译： 提供了一种能够大幅提高成品率的半导体器件的制造方法以及使用该方法制造的半导体器件。 在基板上形成半导体层之后，对于每个单位芯片区域，在半导体层中形成具有至少一个参数值彼此不同的多个功能部分。 然后，对根据参数值进行变更的被摄体进行测量和评价，之后，对于每个芯片区域分割基板，使得作为评价结果的与给定标准对应的功能部分不被破坏。 由此，通过适当地调整每个参数值，可以通过每个芯片面积形成与给定标准对应的至少一个功能部分。

    Semiconductor device and method of manufacturing it
    8.
    发明申请
    Semiconductor device and method of manufacturing it 有权
    半导体装置及其制造方法

    公开(公告)号：US20090032908A1

    公开(公告)日：2009-02-05

    申请号：US11806884

    申请日：2007-06-05

    申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

    发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

    IPC分类号： H01L29/06 ,  H01L21/66

    CPC分类号： H01S5/18347 ,  H01L22/12 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/423 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

    摘要翻译： 提供了一种能够大幅提高成品率的半导体器件的制造方法以及使用该方法制造的半导体器件。 在基板上形成半导体层之后，对于每个单位芯片区域，在半导体层中形成具有至少一个参数值彼此不同的多个功能部分。 然后，对根据参数值进行变更的被摄体进行测量和评价，之后，对于每个芯片区域分割基板，使得作为评价结果的与给定标准对应的功能部分不被破坏。 由此，通过适当地调整每个参数值，可以通过每个芯片面积形成与给定标准对应的至少一个功能部分。

    Vertical cavity surface emitting laser and method of manufacturing the same
    9.
    发明授权
    Vertical cavity surface emitting laser and method of manufacturing the same 失效
    垂直腔表面发射激光器及其制造方法

    公开(公告)号：US08218596B2

    公开(公告)日：2012-07-10

    申请号：US13317165

    申请日：2011-10-12

    申请人： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

    发明人： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18311 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/2086

    摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.

    摘要翻译： 提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。 台面的底部扩展到较低DBR层的顶面。 基部是露出多层的端面的非平坦面。 由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态 裸露。 包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

    Light emitting element, method for manufacturing light emitting element, light emitting element assembly, and method for manufacturing light emitting element assembly
    10.
    发明授权
    Light emitting element, method for manufacturing light emitting element, light emitting element assembly, and method for manufacturing light emitting element assembly 失效
    发光元件，制造发光元件的方法，发光元件组件以及发光元件组件的制造方法

    公开(公告)号：US08183074B2

    公开(公告)日：2012-05-22

    申请号：US12013748

    申请日：2008-01-14

    申请人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Tomoyuki Oki

    发明人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Tomoyuki Oki

    IPC分类号： H01L21/479

    CPC分类号： H01S5/18311 ,  H01L33/145 ,  H01S5/18338

    摘要： A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.

    摘要翻译： 制造发光元件的方法包括以下步骤：（A）在基板上依次形成具有第一导电类型，有源层和第二导电类型的第二化合物半导体层的第一化合物半导体层，（B） 在位于设置有电流限制区域的区域外的第二化合物半导体层的至少一部分的区域中在厚度方向上形成多个点状孔部，（C）通过使一部分 所述第二化合物半导体层从所述孔部分的侧壁进行绝缘处理，以便产生由所述第二化合物半导体层中的所述绝缘区围绕的所述电流限制区域。