公开(公告)号：US08372670B2

公开(公告)日：2013-02-12

申请号：US12841812

申请日：2010-07-22

申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

摘要： A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

摘要翻译： 一种制造发光元件组件的方法，包括：具有形成在所述凹部的所述第一表面和所述内表面上的第一表面，面向所述第一表面的第二表面，凹陷部分和导电材料层的支撑基板， 和发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

公开(公告)号：US07787512B2

公开(公告)日：2010-08-31

申请号：US12333972

申请日：2008-12-12

申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

摘要： A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

摘要翻译： 发光元件组件包括具有第一表面，面向第一表面的第二表面，凹陷部分和形成在凹部的第一表面和内表面上的导电材料层的支撑基板， 发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

公开(公告)号：US20100285625A1

公开(公告)日：2010-11-11

申请号：US12841812

申请日：2010-07-22

申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

IPC分类号： H01L33/00

CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

摘要： A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

摘要翻译： 一种制造发光元件组件的方法，包括：具有形成在所述凹部的所述第一表面和所述内表面上的第一表面，面向所述第一表面的第二表面，凹陷部分和导电材料层的支撑基板， 和发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

公开(公告)号：US20090168825A1

公开(公告)日：2009-07-02

申请号：US12333972

申请日：2008-12-12

申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

IPC分类号： H01S5/026 ,  H01L21/02

CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

摘要： A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

摘要翻译： 发光元件组件包括具有第一表面，面向第一表面的第二表面，凹陷部分和形成在凹部的第一表面和内表面上的导电材料层的支撑基板， 发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

公开(公告)号：US08218596B2

公开(公告)日：2012-07-10

申请号：US13317165

申请日：2011-10-12

申请人： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

发明人： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/2086

摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.

摘要翻译： 提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。 台面的底部扩展到较低DBR层的顶面。 基部是露出多层的端面的非平坦面。 由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态 裸露。 包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

公开(公告)号：US08183074B2

公开(公告)日：2012-05-22

申请号：US12013748

申请日：2008-01-14

申请人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Tomoyuki Oki

发明人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Tomoyuki Oki

IPC分类号： H01L21/479

CPC分类号： H01S5/18311 ,  H01L33/145 ,  H01S5/18338

摘要： A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.

摘要翻译： 制造发光元件的方法包括以下步骤：（A）在基板上依次形成具有第一导电类型，有源层和第二导电类型的第二化合物半导体层的第一化合物半导体层，（B） 在位于设置有电流限制区域的区域外的第二化合物半导体层的至少一部分的区域中在厚度方向上形成多个点状孔部，（C）通过使一部分 所述第二化合物半导体层从所述孔部分的侧壁进行绝缘处理，以便产生由所述第二化合物半导体层中的所述绝缘区围绕的所述电流限制区域。

公开(公告)号：US20090001386A1

公开(公告)日：2009-01-01

申请号：US12081354

申请日：2008-04-15

申请人： Rintaro Koda ,  Takahiro Arakida ,  Yuji Masui ,  Tomoyuki Oki

发明人： Rintaro Koda ,  Takahiro Arakida ,  Yuji Masui ,  Tomoyuki Oki

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01S5/0262 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18375

摘要： The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

摘要翻译： 本发明提供一种半导体装置，其能够实现在使元件彼此粘合时减少诸如裂纹的缺陷的发生。 半导体器件包括彼此粘附的第一元件和第二元件。 第一元件和第二元件中的至少一个元件在面向第一元件和第二元件中的另一元件的一侧具有压力松弛层，并且压力松弛层包括具有突起/凹部的半导体部件，该突起/凹部包括朝向另一元件突出的突起 以及填充在突起/凹部中的凹部中的树脂部件。

公开(公告)号：US20080232414A1

公开(公告)日：2008-09-25

申请号：US12013748

申请日：2008-01-14

申请人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Tomoyuki Oki

发明人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Tomoyuki Oki

IPC分类号： H01S5/00 ,  H01L33/00

CPC分类号： H01S5/18311 ,  H01L33/145 ,  H01S5/18338

摘要： A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.

摘要翻译： 制造发光元件的方法包括以下步骤：（A）在基板上依次形成具有第一导电类型，有源层和第二导电类型的第二化合物半导体层的第一化合物半导体层，（B） 在位于设置有电流限制区域的区域外的第二化合物半导体层的至少一部分的区域中在厚度方向上形成多个点状孔部，（C）通过使一部分 所述第二化合物半导体层从所述孔部分的侧壁进行绝缘处理，以便产生由所述第二化合物半导体层中的所述绝缘区围绕的所述电流限制区域。

公开(公告)号：US08761221B2

公开(公告)日：2014-06-24

申请号：US12078681

申请日：2008-04-03

申请人： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

发明人： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/125 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/187 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2301/176 ,  H01S2301/18

摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

摘要翻译： 发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一 化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

公开(公告)号：US08035187B2

公开(公告)日：2011-10-11

申请号：US12362066

申请日：2009-01-29

申请人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

发明人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

IPC分类号： H01L31/00

CPC分类号： H01L31/1055 ,  G02B6/42 ,  G02B6/4206 ,  G02B6/4246

摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.

摘要翻译： 本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。 半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。 半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。