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公开(公告)号：US08372670B2
公开(公告)日：2013-02-12
申请号：US12841812
申请日：2010-07-22
申请人： Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
发明人： Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
CPC分类号： H01S5/18311 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01S5/0207 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/02272 , H01S5/0425 , H01L2924/00
摘要： A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.
摘要翻译： 一种制造发光元件组件的方法，包括：具有形成在所述凹部的所述第一表面和所述内表面上的第一表面，面向所述第一表面的第二表面，凹陷部分和导电材料层的支撑基板， 和发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。
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公开(公告)号：US07787512B2
公开(公告)日：2010-08-31
申请号：US12333972
申请日：2008-12-12
申请人： Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
发明人： Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01S5/0207 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/02272 , H01S5/0425 , H01L2924/00
摘要： A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.
摘要翻译： 发光元件组件包括具有第一表面，面向第一表面的第二表面，凹陷部分和形成在凹部的第一表面和内表面上的导电材料层的支撑基板， 发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。
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公开(公告)号：US20100285625A1
公开(公告)日：2010-11-11
申请号：US12841812
申请日：2010-07-22
申请人： Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
发明人： Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
IPC分类号： H01L33/00
CPC分类号： H01S5/18311 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01S5/0207 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/02272 , H01S5/0425 , H01L2924/00
摘要： A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.
摘要翻译： 一种制造发光元件组件的方法，包括：具有形成在所述凹部的所述第一表面和所述内表面上的第一表面，面向所述第一表面的第二表面，凹陷部分和导电材料层的支撑基板， 和发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。
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公开(公告)号：US20090168825A1
公开(公告)日：2009-07-02
申请号：US12333972
申请日：2008-12-12
申请人： Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
发明人： Rintaro Koda , Takahiro Arakida , Satoshi Taniguchi , Yuji Masui , Nobuhiro Suzuki , Tomoyuki Oki , Chiyomi Uchiyama , Kayoko Kikuchi
CPC分类号： H01S5/18311 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01S5/0207 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/02272 , H01S5/0425 , H01L2924/00
摘要： A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.
摘要翻译： 发光元件组件包括具有第一表面，面向第一表面的第二表面，凹陷部分和形成在凹部的第一表面和内表面上的导电材料层的支撑基板， 发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。
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公开(公告)号：US20090253249A1
公开(公告)日：2009-10-08
申请号：US12379827
申请日：2009-03-03
申请人： Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
发明人： Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
IPC分类号： H01L21/20
CPC分类号： H01L29/205 , H01L21/02392 , H01L21/02463 , H01L21/02543 , H01L21/30612 , H01L29/66318 , H01L33/0079 , H01L33/02
摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.
摘要翻译： 提供一种制造半导体器件的方法，在其中形成有牺牲层的基于InP的器件的情况下，能够获得比使用AlAs单层作为 牺牲层，并且在蚀刻牺牲层期间不具有将牺牲层与器件层一起蚀刻的可能性。 一种制造半导体器件的方法包括：形成步骤，在InP衬底上形成与InP伪造的牺牲层，然后在牺牲层上形成基于InP的器件层; 以及通过蚀刻牺牲层将InP衬底和器件层彼此分离的分离步骤。
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公开(公告)号：US08288247B2
公开(公告)日：2012-10-16
申请号：US13402383
申请日：2012-02-22
申请人： Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
发明人： Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
IPC分类号： H01L21/46
CPC分类号： H01L29/205 , H01L21/02392 , H01L21/02463 , H01L21/02543 , H01L21/30612 , H01L29/66318 , H01L33/0079 , H01L33/02
摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.
摘要翻译： 提供一种制造半导体器件的方法，其中在其间形成有牺牲层的基于InP的器件的情况下，与使用AlAs单层的情况相比，能够获得更好的器件特性 牺牲层，并且在蚀刻牺牲层期间不具有将牺牲层与器件层一起蚀刻的可能性。 一种制造半导体器件的方法包括：形成步骤，在InP衬底上形成与InP伪造的牺牲层，然后在牺牲层上形成基于InP的器件层; 以及通过蚀刻牺牲层将InP衬底和器件层彼此分离的分离步骤。
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公开(公告)号：US20120149179A1
公开(公告)日：2012-06-14
申请号：US13402383
申请日：2012-02-22
申请人： Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
发明人： Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
IPC分类号： H01L21/20
CPC分类号： H01L29/205 , H01L21/02392 , H01L21/02463 , H01L21/02543 , H01L21/30612 , H01L29/66318 , H01L33/0079 , H01L33/02
摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.
摘要翻译： 提供一种制造半导体器件的方法，其中在其间形成有牺牲层的基于InP的器件的情况下，与使用AlAs单层的情况相比，能够获得更好的器件特性 牺牲层，并且在蚀刻牺牲层期间不具有将牺牲层与器件层一起蚀刻的可能性。 一种制造半导体器件的方法包括：形成步骤，在InP衬底上形成与InP伪造的牺牲层，然后在牺牲层上形成基于InP的器件层; 以及通过蚀刻牺牲层将InP衬底和器件层彼此分离的分离步骤。
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公开(公告)号：US08148238B2
公开(公告)日：2012-04-03
申请号：US12379827
申请日：2009-03-03
申请人： Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
发明人： Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
IPC分类号： H01L21/30
CPC分类号： H01L29/205 , H01L21/02392 , H01L21/02463 , H01L21/02543 , H01L21/30612 , H01L29/66318 , H01L33/0079 , H01L33/02
摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.
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公开(公告)号：US09562489B2
公开(公告)日：2017-02-07
申请号：US14359648
申请日：2011-11-22
CPC分类号： F02D41/30 , F02D13/0215 , F02D19/024 , F02D19/027 , F02D41/0027 , F02D41/1456 , F02D41/2454 , F02D2200/0612 , F02M21/0215 , F02M21/0221 , F02M26/01 , Y02T10/32
摘要： An object of the invention is to provide a technology pertaining to a control system for an internal combustion engine using CNG to allow an internal combustion engine to operate appropriately even when properties of CNG change. To achieve the object, in the control system for an internal combustion engine using compressed natural gas according to the invention, when air-fuel ratio feedback control that corrects the fuel injection quantity in such a way as to make the air-fuel ratio of the air-fuel mixture burned in the internal combustion engine substantially equal to a target air-fuel ratio, a control parameter relating to a condition of combustion of the air-fuel mixture is corrected based on the magnitude of the correction value in the air-fuel ratio feedback control.
摘要翻译： 本发明的目的是提供一种涉及使用CNG的内燃机的控制系统的技术，以允许内燃机即使在CNG的性质改变时也适当地运行。 为了实现该目的，在根据本发明的使用压缩天然气的内燃机的控制系统中，当空燃比反馈控制以这样的方式校正燃料喷射量时，使空燃比 基本上等于目标空燃比在内燃机中燃烧的空气燃料混合物，基于空燃比校正值的大小来校正与空燃混合物的燃烧条件有关的控制参数 比率反馈控制。
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公开(公告)号：US08471693B2
公开(公告)日：2013-06-25
申请号：US13060139
申请日：2009-10-28
申请人： Satoshi Taniguchi
发明人： Satoshi Taniguchi
IPC分类号： G08B21/00
CPC分类号： G01N33/2835
摘要： When biomass fuel reacts with oxygen for a long period of time, an amount of acid ions in a tank is increased with time. However, when metallic ions are generated for some reason and the reaction proceeds to change the acid ions into metallic salts, the increase rate of the amount of the acid ions in the fuel tank becomes slow. When the metallic salt forming reaction proceeds rapidly, the amount of the acid ions may even be reduced. Therefore, in the embodiment, the change of the acid ions into the metallic salts in a fuel is detected. Unless the fuel is newly supplied by refueling, the decrease of the amount of acid ions in the fuel can be considered as a change into metallic salts. Accordingly, the generation of metallic salts can be detected by monitoring the decrease of the amount of acid ions in the fuel. Thus, clogging of a fuel supply system or the like caused by the metallic salt forming reaction can be prevented.
摘要翻译： 当生物质燃料长时间与氧气反应时，罐中酸离子的量随时间增加。 然而，当由于某些原因产生金属离子并且反应进行以将酸离子改变为金属盐时，燃料箱中的酸离子的量的增加速度变慢。 当金属盐形成反应快速进行时，酸离子的量甚至可能降低。 因此，在本实施方式中，检测到燃料中的酸离子变成金属盐。 除非通过加油新提供燃料，否则燃料中酸离子的量的减少可以被认为是变成金属盐。 因此，可以通过监测燃料中酸离子的量的减少来检测金属盐的产生。 因此，可以防止由金属盐形成反应引起的燃料供给系统等的堵塞。
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