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公开(公告)号：US4939101A
公开(公告)日：1990-07-03
申请号：US240332
申请日：1988-09-06
IPC分类号： H01L21/20 , H01L21/762
CPC分类号： H01L21/76251 , H01L21/2007 , Y10S148/012 , Y10S228/903
摘要： Wafers which are direct bonded to each other in accordance with prior art processes suffer from voids at their bonded interface. Annealing such composite structures at high temperature and high pressure (for silicon wafers preferably about 1,100.degree. C. and 15,000 psi) eliminates all voids which are not a result of the presence of a particle on one of the wafers at the time of mating.
摘要翻译： 根据现有技术方法直接接合的晶片在其键合界面处具有空隙。 在高温和高压下退火这种复合结构（对于优选约1100℃和15,000psi的硅晶片）消除了在配合时不是在其中一个晶片上存在颗粒的所有空隙。
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公开(公告)号：US4825117A
公开(公告)日：1989-04-25
申请号：US126138
申请日：1987-11-27
IPC分类号： B06B1/06 , B29C70/54 , G10K11/00 , H01L41/053 , H01L41/08
CPC分类号： B06B1/067 , B29C70/54 , G10K11/004 , H01L41/053
摘要： An apparatus for monitoring the curing of a fiber reinforced composite plastic which is cured at temperatures of the order of 350.degree. C. and an ultrasonic transducer assembly useful in the apparatus. The transducer assembly comprises a lithium niobate piezoelectric element having anisotropic coefficients of thermal expansion which is mounted on a metal base of the transducer assembly by means of a layer of structured copper. The structured copper is thermo-compression diffusion bonded to the lithium niobate element and to the metal base, and is compliant in a transverse direction to compensate for differential thermal expansions while affording good electrical and thermal conductivity and good acoustic coupling between the lithium niobate element and metal base.
摘要翻译： 一种用于监测在350℃温度下固化的纤维增强复合塑料的固化的装置和在该装置中有用的超声换能器组件。 换能器组件包括具有各向异性热膨胀系数的铌酸锂压电元件，其通过结构化铜层安装在换能器组件的金属基座上。 结构化铜是热压缩扩散结合到铌酸锂元素和金属基底上，并且在横向方向上是柔性的，以补偿不同的热膨胀，同时提供良好的导电性和导热性，以及铌酸锂元素与铌酸锂元素之间良好的声耦合 金属底座。
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3.发明授权
公开(公告)号：US4921415A
公开(公告)日：1990-05-01
申请号：US272358
申请日：1988-11-15
IPC分类号： B06B1/06 , B29C70/54 , G10K11/00 , H01L41/053
CPC分类号： B06B1/067 , B29C70/54 , G01N29/2475 , G10K11/004 , H01L41/053 , G01N2291/0251 , G01N2291/0421 , G01N2291/0422
摘要： An apparatus for monitoring the curing of a fiber reinforced composite plastic which is cured at temperatures of the order of 350.degree. C. and an ultrasonic transducer assembly useful in the apparatus. The transducer assembly comprises a lithium niobate piezoelectric element having anisotropic coefficients of thermal expansion which is mounted on a metal base of the transducer assembly by means of a layer of structured copper. The structured copper is thermo-compression diffusion bonded to the lithium niobate element and to the metal base, and is compliant in a transverse direction to compensate for differential thermal expansions while affording good electrical and thermal conductivity and good acoustic coupling between the lithium niobate element and metal base.
摘要翻译： 一种用于监测在350℃温度下固化的纤维增强复合塑料的固化的装置和在该装置中有用的超声换能器组件。 换能器组件包括具有各向异性热膨胀系数的铌酸锂压电元件，其通过结构化铜层安装在换能器组件的金属基座上。 结构化铜是热压缩扩散结合到铌酸锂元素和金属基底上，并且在横向方向上是柔性的，以补偿不同的热膨胀，同时提供良好的导电性和导热性，以及铌酸锂元素与铌酸锂元素之间良好的声耦合 金属底座。
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公开(公告)号：US4366713A
公开(公告)日：1983-01-04
申请号：US247199
申请日：1981-03-25
CPC分类号： G01N29/225 , G01N29/11 , G01N29/221 , G01N29/223 , G01N2291/015 , G01N2291/0231 , G01N2291/0237 , G01N2291/102
摘要： The bond between a structured copper heat sink member and a semiconductor wafer is inspected for voids and unbonds by a focused ultrasonic pulse transmission method. The small focused spot of ultrasound is transmitted along the structured copper strands and is attenuated in the lateral direction. The absence of a received pulse or a significantly reduced amplitude signal, as the assembled device is scanned with acoustic pulses, indicate flaws in the bond.
摘要翻译： 通过聚焦超声脉冲传输方法检查结构化铜散热部件和半导体晶片之间的接合空隙和解开。 超声的小聚焦点沿着结构化的铜线传播，并沿横向衰减。 当组装的装置用声脉冲扫描时，不存在接收到的脉冲或显着减小的振幅信号，表示接合中的缺陷。
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公开(公告)号：US4361717A
公开(公告)日：1982-11-30
申请号：US213259
申请日：1980-12-05
IPC分类号： H01L31/0352 , H01L31/052 , H01L31/06
CPC分类号： F24J2/07 , H01L31/035281 , H01L31/03529 , H01L31/052 , Y02E10/41 , Y02E10/50
摘要： Concentrated sunlight impinges on a large area photovoltaic device which is bonded to a highly pliable and thermally and electrically conductive structured copper strain relieving member; the lower face of the structured copper is sealed to a fluid cooled metal heat sink. Large power densities of sunlight are absorbed without appreciable temperature rise. The structured copper accommodates to the difference in expansion between the metal heat sink and the semiconductor wafer. Three embodiments utilize a single planar junction diode, an interdigitated diode, and series connected isolated junction diodes.
摘要翻译： 集中的太阳光照射在一个大面积的光伏器件上，该光伏器件被粘结到一个高度柔韧的导热和导电结构的铜应变消除部件上; 结构化铜的下表面被密封到流体冷却的金属散热器。 阳光的大功率密度被吸收而没有明显的温度上升。 结构化铜适应于金属散热器和半导体晶片之间的膨胀差异。 三个实施例使用单个平面结二极管，交叉指示二极管和串联连接的隔离结二极管。
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6.发明授权
公开(公告)号：US5206186A
公开(公告)日：1993-04-27
申请号：US950553
申请日：1992-09-25
IPC分类号： H01L21/603 , H01L23/482
CPC分类号： H01L24/80 , H01L23/4827 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/1301 , H01L2924/14 , H01L2924/30107
摘要： Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the boundaries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). External contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct thermocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/bump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl.sub.2 link and an aluminum stratum.
摘要翻译： 退火铜箔（12）涂覆有铬膜（16），然后用适当厚度的金膜（14）涂覆，并且热压粘合到硅芯片（30）上的铝金属化基板（18）上以提供可焊接 ，高电流接触芯片。 箔形成适当的电网接触图案（40），并且仅在芯片上存在铝金属化的情况下结合到硅芯片。 箔的翼（翼）部分（46）延伸超过硅芯片的边界，用于随后在箔上的后向反射以在预先指定的位置（49）提供电接触。 通过穿过位于箔区域正上方的陶瓷盖制成与箔的外部接触。 因此，主要铜箔与铝半导体焊盘的直接热压接可以通过金属间AuAl2连接和铝层将铜导体固定在硅芯片上来取代当前的金制定位/凸点连接。
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7.发明授权Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip 失效形成具有延伸穿过封装盖中的孔的引线和封装的半导体芯片的密封封装的方法
公开(公告)号：US5135890A
公开(公告)日：1992-08-04
申请号：US765286
申请日：1991-09-25
申请人： Victor A. K. Temple , Donald L. Watrous , Constantine A. Neugebauer , James F. Burgess , Homer H. Glascock, II
发明人： Victor A. K. Temple , Donald L. Watrous , Constantine A. Neugebauer , James F. Burgess , Homer H. Glascock, II
IPC分类号： H01L23/04 , H01L23/049 , H01L23/485
CPC分类号： H01L24/10 , H01L23/04 , H01L23/049 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2224/45144 , H01L2924/01004 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1301 , H01L2924/1306 , H01L2924/14 , H01L2924/15787 , H01L2924/30107
摘要： A hermetically sealed package for a semiconductor device includes a lid through which the leads of the device extend vertically away from the chip through an aperture in the lid which is hermetically sealed by the external terminal or electrode. The package is compact, lightweight and free of magnetic materials.
摘要翻译： 用于半导体器件的密封封装包括一个盖子，该器件的引线通过该盖子通过盖子的孔垂直地远离芯片延伸，盖子上的孔被外部端子或电极气密地密封。 该包装体积小巧，重量轻，无磁性材料。
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公开(公告)号：US5100740A
公开(公告)日：1992-03-31
申请号：US777495
申请日：1991-10-15
IPC分类号： B23K35/00 , C04B37/02 , H01L21/48 , H01L23/492 , H01L23/498
CPC分类号： H01L23/49866 , B23K35/001 , C04B37/021 , C04B37/026 , H01L21/4839 , H01L21/4871 , H01L23/4922 , C04B2237/06 , C04B2237/124 , C04B2237/34 , C04B2237/343 , C04B2237/403 , C04B2237/407 , C04B2237/62 , C04B2237/72 , C04B2237/82 , C04B2237/86 , H01L2924/0002 , H01L2924/09701 , Y10T428/12535 , Y10T428/12542 , Y10T428/1259 , Y10T428/12611 , Y10T428/12826 , Y10T428/1284 , Y10T428/12903
摘要： A composite structure comprising a symmetric bimetallic laminate bonded to a separate substrate is provided by eutectic bonding the bimetallic laminate to the substrate. A variety of beneficial structures can be provided.
摘要翻译： 通过将双金属层压体共晶接合到基底上来提供包含结合到单独基底的对称双金属层压板的复合结构。 可以提供各种有益的结构。
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公开(公告)号：US4541035A
公开(公告)日：1985-09-10
申请号：US635697
申请日：1984-07-30
IPC分类号： H01L23/522 , H01L21/70 , H01L21/768 , H01L23/12 , H01L23/14 , H01L23/538 , H01L27/13 , H05K3/46 , H05K1/14
CPC分类号： H01L23/5383 , H01L23/147 , H01L2224/05554 , H01L2224/48091 , H01L2224/48227 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12042 , H01L2924/3011
摘要： A silicon circuit board incorporates multiple levels of patterned conductors. First level upper and lower patterned conductors are situated on an insulation-coated, monocrystalline silicon substrate. Upper and lower, high resistivity, polycrystalline silicon layers, in turn, are situated on the first level upper and lower patterned conductors, respectively. Second level upper and lower patterned conductors are situated over the upper and lower polycrystalline silicon layers. Further levels of patterned conductors in the circuit board may be provided by iteratively forming on the board polycrystalline silicon layers and patterned conductors. Conducting feedthroughs in the circuit board provide electrical communication between various patterened conductors.
摘要翻译： 硅电路板结合了多层图案导体。 第一级上下图案导体位于绝缘涂覆的单晶硅衬底上。 上，下，高电阻率，多晶硅层又分别位于第一级上下图案导体上。 第二级上下图案导体位于上多晶硅层和下多晶硅层之上。 可以通过在板上多层硅层和图案化导体上迭代地形成电路板中的图案导体的进一步水平。 在电路板中进行馈通可以提供各种感应导体之间的电气通信。
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公开(公告)号：US5184206A
公开(公告)日：1993-02-02
申请号：US603495
申请日：1990-10-26
申请人： Constantine A. Neugebauer , Homer H. Glascock, II , Kyung W. Paik , James G. McMullen , Martha M. Neugebauer
发明人： Constantine A. Neugebauer , Homer H. Glascock, II , Kyung W. Paik , James G. McMullen , Martha M. Neugebauer
IPC分类号： H01L21/60 , H01L21/603 , H01L23/482
CPC分类号： H01L24/80 , H01L23/4827 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/1301 , H01L2924/14 , H01L2924/30107
摘要： Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the boundaries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). External contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct thermocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/bump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl.sub.2 link and an aluminum stratum.
摘要翻译： 退火铜箔（12）涂覆有铬膜（16），然后用适当厚度的金膜（14）涂覆，并且热压粘合到硅芯片（30）上的铝金属化基板（18）上以提供可焊接 ，高电流接触芯片。 箔形成适当的电网接触图案（40），并且仅在芯片上存在铝金属化的情况下结合到硅芯片。 箔的翼（翼）部分（46）延伸超过硅芯片的边界，用于随后在箔上的后向反射以在预先指定的位置（49）提供电接触。 通过穿过位于箔区域正上方的陶瓷盖制成与箔的外部接触。 因此，主要铜箔与铝半导体焊盘的直接热压接可以通过金属间AuAl2连接和铝层将铜导体固定在硅芯片上来取代当前的金制定位/凸点连接。
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