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    Method of thermally coupling a flow tube or like component to a thermal sensor and sensor systems formed thereby
    1.
    发明申请
    Method of thermally coupling a flow tube or like component to a thermal sensor and sensor systems formed thereby 失效
    将流管或类似部件热耦合到由此形成的热传感器和传感器系统的方法

    公开(公告)号：US20070044554A1

    公开(公告)日：2007-03-01

    申请号：US11213556

    申请日：2005-08-26

    申请人： Robert Higashi ,  Ernest Satren

    发明人： Robert Higashi ,  Ernest Satren

    IPC分类号： H01C3/04

    CPC分类号： G01F1/6845 ,  G01F1/6847 ,  H01L2224/81801 ,  Y10T29/49004

    摘要： A method of thermally coupling a flow tube or like component to a thermal sensor comprises bonding the component to the thermal sensor such that thermally conductive portions formed on the component are thermally coupled to corresponding sensing/heating elements disposed on the thermal sensor. The method can be employed to form a capillary mass flow sensor system. Thermally conductive portions, such as metal bands, can be formed on the outer surface of a capillary tube for bonding with corresponding resistive heat sensing and heating elements disposed on the substrate of a micro mass flow sensor. Bonding metal pads can be formed on the sensor surface preparatory to solder bonding the tube metal bands to the resistive sensing and heating elements.

    摘要翻译： 将流管或类似部件热耦合到热传感器的方法包括将部件接合到热传感器，使得形成在部件上的导热部分热耦合到布置在热传感器上的对应的感测/加热元件。 该方法可用于形成毛细管质量流量传感器系统。 可以在毛细管的外表面上形成诸如金属带的导热部分，以与布置在微质量流量传感器的基底上的相应的电阻式热感测和加热元件接合。 粘结金属焊盘可以形成在传感器表面上，准备将管金属带焊接到电阻感测和加热元件。

    Tilt-insensitive flow sensor
    2.
    发明授权
    Tilt-insensitive flow sensor 有权
    倾斜不敏感流量传感器

    公开(公告)号：US07331224B2

    公开(公告)日：2008-02-19

    申请号：US11005968

    申请日：2004-12-07

    申请人： Aravind Padmanabhan ,  Ernest Satren ,  Ulrich Bonne ,  Robert Higashi

    发明人： Aravind Padmanabhan ,  Ernest Satren ,  Ulrich Bonne ,  Robert Higashi

    IPC分类号： G01F1/68

    CPC分类号： G01F1/6845 ,  G01F1/6842 ,  G01F1/692

    摘要： A flow sensor is provided having a substrate with a sensing element and flow channel over the sensing element. The sensing element senses at least one property of a fluid. The flow channel is configured such that tilting the flow sensor does not have a significant effect on the measured signal. A device for measuring tilt in a system having a fluid flow path is also provided.

    摘要翻译： 提供了一种流量传感器，其具有在感测元件上方具有感测元件和流动通道的基底。 感测元件感测流体的至少一个性质。 流动通道被配置为使得流动传感器的倾斜对测量的信号没有显着影响。 还提供了一种用于测量具有流体流路的系统中的倾斜的装置。

    Tilt-insensitive flow sensor
    3.
    发明申请
    Tilt-insensitive flow sensor 有权
    倾斜不敏感流量传感器

    公开(公告)号：US20060117845A1

    公开(公告)日：2006-06-08

    申请号：US11005968

    申请日：2004-12-07

    申请人： Aravind Padmanabhan ,  Ernest Satren ,  Ulrich Bonne ,  Robert Higashi

    发明人： Aravind Padmanabhan ,  Ernest Satren ,  Ulrich Bonne ,  Robert Higashi

    IPC分类号： G01F1/68

    CPC分类号： G01F1/6845 ,  G01F1/6842 ,  G01F1/692

    摘要： A flow sensor is provided having a substrate with a sensing element and flow channel over the sensing element. The sensing element senses at least one property of a fluid. The flow channel is configured such that tilting the flow sensor does not have a significant effect on the measured signal. A device for measuring tilt in a system having a fluid flow path is also provided.

    摘要翻译： 提供了一种流量传感器，其具有在感测元件上方具有感测元件和流动通道的基底。 感测元件感测流体的至少一个性质。 流动通道被配置为使得流动传感器的倾斜对测量的信号没有显着影响。 还提供了一种用于测量具有流体流路的系统中的倾斜的装置。

    High performance detection pixel
    5.
    发明授权
    High performance detection pixel 有权
    高性能检测像素

    公开(公告)号：US08314769B2

    公开(公告)日：2012-11-20

    申请号：US12769097

    申请日：2010-04-28

    申请人： Barrett E. Cole ,  Robert Higashi

    发明人： Barrett E. Cole ,  Robert Higashi

    IPC分类号： G09G3/34 ,  G01J5/00

    CPC分类号： G01J5/20 ,  G01J5/046 ,  G01J5/0809 ,  G01J5/0853

    摘要： A pixel having a reflector situated on a substrate. A temperature sensitive resistor may be situated over at least a portion of the reflector. An insulator may be situated on the resistor. The resistor and insulator may effectively be very thin films. A flat metal mesh or grid may be situated on the insulator. The grid, insulator and resistor may be supported by two or more posts at approximately one-fourth of a wavelength from the reflector. The wavelength may be that of the radiation to be sensed by the pixel. The thermal mass of the combination of the temperature sensitive resistor, insulator and grid may be less than several times the thermal mass of the grid. Since the grid may be so thin for low noise performance and high sensitivity, the grid can have a flatness assured to a desired extent with stiffeners attached to portions of it.

    摘要翻译： 具有位于基板上的反射器的像素。 温度敏感电阻器可以位于反射器的至少一部分上方。 绝缘体可以位于电阻器上。 电阻和绝缘体可能有效地是非常薄的薄膜。 平面金属网或栅格可以位于绝缘体上。 栅格，绝缘体和电阻器可以由距离反射器大约四分之一波长的两个或更多个柱支撑。 波长可以是由像素感测的辐射的波长。 温度敏感电阻，绝缘体和电网组合的热质量可能小于电网热质量的几倍。 由于栅格可能如此薄以使低噪声性能和高灵敏度，因此栅格可以具有平坦度，并将其保持在希望的程度上，并具有附着于其部分的加强件。

    METHOD AND SYSTEM FOR ETCHING A DIAPHRAGM PRESSURE SENSOR
    6.
    发明申请
    METHOD AND SYSTEM FOR ETCHING A DIAPHRAGM PRESSURE SENSOR 有权
    用于蚀刻压力传感器的方法和系统

    公开(公告)号：US20120104521A1

    公开(公告)日：2012-05-03

    申请号：US12915356

    申请日：2010-10-29

    申请人： Robert Higashi

    发明人： Robert Higashi

    IPC分类号： H01L29/84 ,  H01L21/3065

    CPC分类号： G01L9/0042 ,  G01L9/0054

    摘要： A method for etching a diaphragm pressure sensor based on a hybrid anisotropic etching process. A substrate with an epitaxial etch stop layer can be etched utilizing an etching process in order to form a diaphragm at a selective portion of the substrate. The diaphragm can be oriented at an angle (e.g., 45 degree) with respect to the substrate in order to avoid an uncertain beveled portion in a stress/strain field of the diaphragm. The diaphragm can be further etched utilizing an etch finishing process to create an anisotropic edge portion on the major areas of the diaphragm and optimize the thickness and size of the diaphragm. Such an approach provides an enhanced diaphragm structure with respect to a wide range of pressure sensor applications.

    摘要翻译： 一种基于混合各向异性蚀刻工艺蚀刻隔膜压力传感器的方法。 可以利用蚀刻工艺蚀刻具有外延蚀刻停止层的衬底，以在衬底的选择性部分形成隔膜。 隔膜可以相对于基板成一定角度（例如45度），以避免隔膜的应力/应变场中的不确定的斜面部分。 可以利用蚀刻精加工进一步蚀刻隔膜，以在隔膜的主要区域上产生各向异性边缘部分，并优化隔膜的厚度和尺寸。 这种方法相对于宽范围的压力传感器应用提供了增强的膜结构。

    Nanotube sensor
    7.
    发明申请
    Nanotube sensor 有权

    公开(公告)号：US20050255032A1

    公开(公告)日：2005-11-17

    申请号：US11151902

    申请日：2005-06-14

    申请人： Barrett Cole ,  Robert Higashi

    发明人： Barrett Cole ,  Robert Higashi

    IPC分类号： G01N27/00 ,  G01N27/414 ,  D01F9/12

    CPC分类号： G01N27/4146 ,  Y10S977/953

    摘要： A sensor having a nanotube grown on and supported by thermal bimorph structures. The nanotube rests on a heat sink during sensing gas or a liquid and is moved from the heat sink when the nanotube is heated to desorb gas or liquid from it. The heatsink may function as a gate along with the bimorph structures as the other terminals of a transistor. Current-voltage and current-gate voltage characteristics may be obtained of the nanotube as a device like a transistor. These characteristics may provide information on a gas or liquid absorbed by the nanotube.

    HIGH REFLECTANCE TERAHERTZ MIRROR AND RELATED METHOD
    10.
    发明申请
    HIGH REFLECTANCE TERAHERTZ MIRROR AND RELATED METHOD 有权
    高反射TERAHERTZ镜和相关方法

    公开(公告)号：US20100108891A1

    公开(公告)日：2010-05-06

    申请号：US12261911

    申请日：2008-10-30

    申请人： James Allen Cox ,  Robert Higashi

    发明人： James Allen Cox ,  Robert Higashi

    IPC分类号： H01L31/0352 ,  H01L21/02 ,  G01J5/20

    CPC分类号： G01N21/3581 ,  G01N21/3504 ,  G02B5/0816 ,  H01S3/08059

    摘要： A method includes forming a plurality of mirror periods, stacking the mirror periods, and bonding the mirror periods together to form a high reflectance mirror. At least one of the mirror periods is formed by bonding a first semiconductor layer to a first side of a film layer (where the film layer is formed on a second semiconductor layer), forming an opening through the second semiconductor layer to expose the film layer, and cutting through the first semiconductor layer, the film layer, and the second semiconductor layer. The first semiconductor layer could include a high resistivity silicon wafer, the film layer could include an oxide film, and the second semiconductor layer could include a silicon wafer. The high resistivity silicon wafer could be approximately 110 μm thick, and the silicon wafer could be approximately 125 μm thick. The opening through the second semiconductor layer could be 1.25 cm to 1.75 cm in width.

    摘要翻译： 一种方法包括形成多个反射镜周期，堆叠反射镜周期，以及将反射镜周期结合在一起以形成高反射镜。 通过将第一半导体层接合到膜层的第一侧（其中膜层形成在第二半导体层上）形成反射镜周期中的至少一个，通过第二半导体层形成开口以暴露膜层 并切割穿过第一半导体层，膜层和第二半导体层。 第一半导体层可以包括高电阻率硅晶片，膜层可以包括氧化物膜，并且第二半导体层可以包括硅晶片。 高电阻率硅晶片可以是大约110μm厚，并且硅晶片可以是大约125μm厚。 通过第二半导体层的开口的宽度可以为1.25cm至1.75cm。