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    High voltage semiconductor devices with reduced on-resistance
    4.
    发明授权
    High voltage semiconductor devices with reduced on-resistance 失效
    具有降低导通电阻的高电压半导体器件

    公开(公告)号：US4942440A

    公开(公告)日：1990-07-17

    申请号：US243210

    申请日：1988-09-09

    申请人： Bantval J. Baliga ,  Eric J. Wildi

    发明人： Bantval J. Baliga ,  Eric J. Wildi

    IPC分类号： H01L21/761 ,  H01L27/07 ,  H01L29/10 ,  H01L29/868

    CPC分类号： H01L27/0761 ,  H01L21/761 ,  H01L27/0727 ,  H01L29/1004 ,  H01L29/868

    摘要： A high voltage P-N diode includes a P.sup.- substrate with a thin N.sup.- epitaxial layer thereon. An N.sup.+ cathode region extends into the N.sup.- epitaxial layer from the upper surface thereof. A P.sup.+ anode region extends into the N.sup.- epitaxial layer from its upper surface and surrounds the N.sup.+ cathode region. An N.sup.+ buried layer is situated between the P.sup.- substrate and the N.sup.- epitaxial layer, beneath the P.sup.+ anode region, and surrounds the N.sup.+ cathode region, as viewed from above. A further P.sup.+ region extends into the N.sup.- epitaxial layer from its upper surface and surrounds the N.sup.+ cathode region, and, in turn, is surrounded by the P.sup.+ anode region. In an exemplary embodiment, a MOSFET is included to alternately connect the further P.sup.+ region to the P.sup.- substrate and to open circuit the further P.sup.+ region. With the further P.sup. + region open circuited, the P-N diode has a low on-resistance when it operates in its current-conducting state. An embodiment structurally similar to the P-N diode comprises a bipolar transistor having an N.sup.+ emitter region extending into a P.sup.+ base region, which corresponds to the P.sup.+ anode region of the diode.

    摘要翻译： 高压P-N二极管包括其上具有薄N-外延层的P-衬底。 N +阴极区从其上表面延伸到N外延层。 P +阳极区域从其上表面延伸到N外延层中并且包围N +阴极区域。 如上所述，N +掩埋层位于P-衬底和N外延层之间，位于P +阳极区之下，并且包围N +阴极区。 另外的P +区域从其上表面延伸到N外延层中并且包围N +阴极区域，并且又由P +阳极区域包围。 在示例性实施例中，包括MOSFET以将另外的P +区域交替地连接到P基板并且使另外的P +区域开路。 当进一步的P +区域断开时，P-N二极管在其导通状态下工作时具有低导通电阻。 结构上类似于P-N二极管的实施例包括具有延伸到P +基极区域中的N +发射极区域的双极晶体管，其对应于二极管的P +阳极区域。

    High-voltage pull-up device
    5.
    发明授权
    High-voltage pull-up device 失效
    高压上拉装置

    公开(公告)号：US4868620A

    公开(公告)日：1989-09-19

    申请号：US219288

    申请日：1988-07-14

    申请人： James E. Kohl ,  Eric J. Wildi ,  Robert S. Scott ,  Deva N. Pattanaya ,  Michael S. Adler

    发明人： James E. Kohl ,  Eric J. Wildi ,  Robert S. Scott ,  Deva N. Pattanaya ,  Michael S. Adler

    IPC分类号： H01L29/73 ,  H01L29/78

    CPC分类号： H01L29/7302 ,  H01L29/7835 ,  H01L29/7838

    摘要： An integrated circuit in which a large potential can be maintained between the source of the device and the substrate on which this device and other devices are fabricated is described. The circuit employs a minority carrier sink region to remove minority carriers from the gate region of a MOS depletion device. The sink region is shielded from the substrate by a buried layer which prevents punch-through between the sink region and the substrate.

    摘要翻译： 描述了其中可以在器件的源极与其上制造该器件和其它器件的衬底之间保持大电位的集成电路。 该电路采用少数载流子阱区以从MOS耗尽装置的栅极区域去除少数载流子。 通过掩埋层将宿区域与衬底隔离，防止了宿区域和衬底之间的穿透。

    Semiconductor wafer with an electrically-isolated semiconductor device
    6.
    发明授权
    Semiconductor wafer with an electrically-isolated semiconductor device 失效
    具有电隔离半导体器件的半导体晶片

    公开(公告)号：US4862242A

    公开(公告)日：1989-08-29

    申请号：US807612

    申请日：1985-12-11

    申请人： Eric J. Wildi ,  Tat-Sing P. Chow

    发明人： Eric J. Wildi ,  Tat-Sing P. Chow

    IPC分类号： H01L21/761

    CPC分类号： H01L21/761

    摘要： A semiconductor wafer having a substrate with an epitaxial layer thereon includes a semiconductor device electrically isolated from the substrate as well as from any other devices in the wafer by electrical isolation structure comprising semiconductor material. The semiconductor device can accordingly be operated at high voltage with respect to the wafer substrate. The isolation structure in one form of the wafer comprises an N+ high voltage tub included in the wafer and a P+ ground region situated in the expitaxial layer, adjoining the substrate, and horizontally circumscribing the N+ high voltage tub and being spaced therefrom by a minimum layer extent of a portion of the epitaxial layer that is of N conductivity type. The N+ high voltage tub comprises an N+ high voltage region situated in the epitaxial layer and surrounding a device region in which the semiconductor device is at least partially contained and, further, an N+ buried layer underlying the N+ high voltage region and the entirety of the device region.

    摘要翻译： 具有其上具有外延层的衬底的半导体晶片包括与衬底以及通过包括半导体材料的电隔离结构与晶片中的任何其它器件电隔离的半导体器件。 因此，相对于晶片衬底，半导体器件可以以高电压工作。 晶片的一种形式的隔离结构包括晶片中包括的N +高压电池和位于外延层中的毗邻衬底的P +接地区域，并且水平地围绕N +高压电池并与其隔开最小层 具有N导电类型的外延层的一部分的程度。 N +高压槽包括位于外延层中的N +高电压区域，并且围绕其中至少部分地包含半导体器件的器件区域，并且还包括在N +高电压区域下面的N +掩埋层和整个 设备区域。

    Power semiconductor device with main current section and emulation current section
    7.
    发明授权
    Power semiconductor device with main current section and emulation current section 失效
    具有主电流部分和仿真电流部分的功率半导体器件

    公开(公告)号：US4783690A

    公开(公告)日：1988-11-08

    申请号：US892739

    申请日：1986-07-31

    申请人： John P. Walden ,  Eric J. Wildi

    发明人： John P. Walden ,  Eric J. Wildi

    IPC分类号： H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/72 ,  H01L23/56 ,  H02H3/00

    CPC分类号： H01L29/7815 ,  H01L29/7395 ,  H01L29/7811 ,  H01L2924/0002

    摘要： A power semiconductor device incorporates in its active, or current-carrying, region a main current section and an emulation current section. The active region is surrounded by a common device termination region. This is accomplished through provision of respective separate cathodes for the main and emulation current regions, while the device anode is common to both the main and emulation current sections. The current level in the emulation current section provides an accurate representation of the current level in the main current section since the main and emulation current sections are closely coupled both thermally and electrically and, further, are formed in the same fabrication process. The current level in the main current section can be economically determined with low power circuitry by way of sensing the current level in the emulation current section.

    摘要翻译： 功率半导体器件在其有源或载流区域中并入主电流部分和仿真电流部分。 有源区被公共设备终止区包围。 这通过为主模拟电流区域和仿​​真电流区域提供相应的单独的阴极来实现，而器件阳极对于主模拟电流部分和仿真电流部分是共同的。 仿真电流部分中的电流电平提供了主电流部分中的电流电平的精确表示，因为主电路和仿真电流部分在热和电之间紧密耦合，并且进一步在相同的制造工艺中形成。 通过感测仿真电流部分中的电流电平，可以通过低功率电路经济地确定主电流部分中的电流电平。

    HVAC condenser assemblies having controllable input voltages
    8.
    发明授权
    HVAC condenser assemblies having controllable input voltages 有权
    HVAC冷凝器组件具有可控的输入电压

    公开(公告)号：US08400090B2

    公开(公告)日：2013-03-19

    申请号：US12773490

    申请日：2010-05-04

    申请人： Joseph G. Marcinkiewicz ,  Mark E. Carrier ,  Eric J. Wildi

    发明人： Joseph G. Marcinkiewicz ,  Mark E. Carrier ,  Eric J. Wildi

    IPC分类号： G05F1/70

    CPC分类号： F25B49/027 ,  F25B2600/021 ,  F25B2600/111 ,  Y02B30/741 ,  Y02B30/743

    摘要： Assemblies for HVAC systems and methods of operating HVAC systems are disclosed, including a method of operating an HVAC system having a condenser motor operatively coupled to a fan and a controllable bus voltage for powering the condenser motor. The method includes increasing the controllable bus voltage from a first voltage to a second voltage to increase a speed of the condenser motor.

    摘要翻译： 公开了用于HVAC系统的组件和操作HVAC系统的方法，包括操作具有可操作地耦合到风扇的冷凝器电动机的HVAC系统的方法和用于为冷凝器电动机供电的可控总线电压。 该方法包括将可控母线电压从第一电压增加到第二电压以增加电容器电动机的速度。

    Inhibiting Compressor Backspin Via a Condenser Motor
    9.
    发明申请
    Inhibiting Compressor Backspin Via a Condenser Motor 有权
    通过冷凝器电机抑制压缩机反冲

    公开(公告)号：US20110030398A1

    公开(公告)日：2011-02-10

    申请号：US12773468

    申请日：2010-05-04

    申请人： Joseph G. Marcinkiewicz ,  Mark E. Carrier ,  Eric J. Wildi

    发明人： Joseph G. Marcinkiewicz ,  Mark E. Carrier ,  Eric J. Wildi

    IPC分类号： F25B49/02 ,  F25B31/00 ,  F25B39/04

    CPC分类号： F25B49/027 ,  F25B2600/021 ,  F25B2600/111 ,  Y02B30/741 ,  Y02B30/743

    摘要： Assemblies for HVAC systems and methods of operating HVAC systems are disclosed, including a method of operating an HVAC system having a compressor assembly and a condenser assembly. The compressor assembly includes a compressor having a compressor motor that is susceptible to backspining and capable of generating electric power when backspinning. The condenser assembly includes a condenser motor operatively coupled to a fan. The condenser assembly is electrically coupled to the compressor assembly. The method includes using the condenser motor as an electric load to dissipate electric power generated by the compressor motor when the compressor motor backspins.

    摘要翻译： 公开了用于HVAC系统的组件和操作HVAC系统的方法，包括操作具有压缩机组件和冷凝器组件的HVAC系统的方法。 压缩机组件包括具有压缩机电动机的压缩机，该压缩机电动机易受背压影响，并且当后旋时能够产生电力。 冷凝器组件包括可操作地联接到风扇的冷凝器马达。 冷凝器组件电耦合到压缩机组件。 该方法包括当压缩机电动机反向旋转时，使用冷凝器电动机作为电负载来耗散由压缩机电动机产生的电力。

    System and Method for Detecting Fluid Delivery System Conditions Based on Motor Parameters
    10.
    发明申请
    System and Method for Detecting Fluid Delivery System Conditions Based on Motor Parameters 有权
    基于电机参数检测流体输送系统条件的系统和方法

    公开(公告)号：US20100204945A1

    公开(公告)日：2010-08-12

    申请号：US12368577

    申请日：2009-02-10

    申请人： Prakash B. Shahi ,  Eric J. Wildi ,  Mark E. Carrier ,  Randy L. Bomkamp ,  Hung M. Pham ,  William P. Butler

    发明人： Prakash B. Shahi ,  Eric J. Wildi ,  Mark E. Carrier ,  Randy L. Bomkamp ,  Hung M. Pham ,  William P. Butler

    IPC分类号： G06F19/00 ,  H02K11/00

    CPC分类号： F25B49/005 ,  F25B49/025 ,  F25B2500/04 ,  F25B2700/151

    摘要： Systems and methods for detecting various system conditions in a fluid delivery system (such as an HVAC system) based on a motor parameter are disclosed. Embodiments of the present invention relate to detecting: filter condition, frozen coil condition, register condition, energy efficiency, system failure, or any combination thereof. Embodiments of the present invention relate to detecting fluid delivery system conditions based on motor parameters including system current, system power, system efficiency, motor current, motor power, motor efficiency, and/or a change (or rate of change) in motor parameters. Techniques for responding to a clogged filter and a frozen coil are also disclosed. Also disclosed are techniques for characterizing a fluid delivery system off-site, prior to system installation.

    摘要翻译： 公开了一种用于基于电动机参数来检测流体输送系统（例如HVAC系统）中的各种系统状况的系统和方法。 本发明的实施例涉及检测：过滤条件，冻结线圈条件，注册条件，能量效率，系统故障或其任何组合。 本发明的实施例涉及基于包括系统电流，系统功率，系统效率，电动机电流，电动机功率，电动机效率和/或电动机参数的变化（或变化率）的电动机参数来检测流体输送系统状况。 还公开了用于响应堵塞的过滤器和冷冻卷材的技术。 还公开了在系统安装之前用于表征异地流体输送系统的技术。