Ultra high speed uniform plasma processing system
    1.
    发明授权
    Ultra high speed uniform plasma processing system 有权
    超高速均匀等离子体处理系统

    公开(公告)号:US07845309B2

    公开(公告)日:2010-12-07

    申请号:US10710457

    申请日:2004-07-13

    CPC分类号: H01J37/32834 H01J37/32633

    摘要: An apparatus for processing a substrate with a plasma. The apparatus includes first and second electrodes positioned with a spaced apart relationship. A separating ring has a vacuum-tight engagement with confronting surfaces of the first electrode and the second electrode to define an evacuatable processing region therebetween. Communicating with the processing region is a process gas port for introducing a process gas to the processing region. The processing region may be evacuated through a vacuum port defined in one of the first and second electrodes to a pressure suitable for exciting a plasma from the process gas in the processing region when the first and second electrodes are powered.

    摘要翻译: 一种用等离子体处理衬底的装置。 该装置包括以间隔开的关系定位的第一和第二电极。 分离环与第一电极和第二电极的相对表面具有真空密封接合,以在它们之间限定可抽空的处理区域。 与处理区域通信是用于将处理气体引入到处理区域的处理气体端口。 处理区域可以通过在第一和第二电极中的一个中限定的真空端口抽真空至适于在第一和第二电极通电时从处理区域中的处理气体激发等离子体的压力。

    Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
    2.
    发明授权
    Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate 有权
    等离子体处理装置和从衬底上的选定区域去除外来材料的方法

    公开(公告)号:US07635418B2

    公开(公告)日:2009-12-22

    申请号:US11003062

    申请日:2004-12-03

    摘要: Apparatus and methods for shielding a feature projecting from a first area on a substrate to a plasma while simultaneously removing extraneous material from a different area on the substrate with the plasma. The apparatus includes at least one concavity positioned and dimensioned to receive the feature such that the feature is shielded from the plasma. The apparatus further includes a window through which the plasma removes the extraneous material. The method generally includes removing the extraneous material while shielding the feature against plasma exposure.

    摘要翻译: 用于屏蔽从衬底上的第一区域突出到等离子体的特征的装置和方法,同时使用等离子体从衬底上的不同区域去除外来材料。 该装置包括至少一个位置和尺寸以容纳特征的凹陷,使得该特征与等离子体屏蔽。 该装置还包括一个窗口,等离子体通过这个窗口去除外来材料。 该方法通常包括去除外来材料,同时屏蔽特征免受等离子体暴露。

    Plasma treatment system
    3.
    发明授权
    Plasma treatment system 有权
    等离子体处理系统

    公开(公告)号:US08623471B2

    公开(公告)日:2014-01-07

    申请号:US13353823

    申请日:2012-01-19

    摘要: A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.

    摘要翻译: 一种用下游式等离子体处理工件的等离子体处理系统。 等离子体处理系统的处理室包括具有通常设置在供电电极和接地板之间的等离子体空腔的室盖,通过接地板与等离子体腔分离的处理空间以及用于保持的处理空间中的基板支撑 工件。 在等离子体腔中产生直接等离子体。 接地板适于具有从等离子体空腔中进入处理空间的等离子体中的电子和离子的开口,以提供自由基的下游型等离子体。 开口还可以消除等离子体腔和处理空间之间的光线的视线路径。 在另一方面,可以通过从室盖移除或插入至少一个可拆卸的侧壁部分来调节处理室的体积。

    Plasma Treatment System
    4.
    发明申请
    Plasma Treatment System 有权
    等离子体处理系统

    公开(公告)号:US20120118857A1

    公开(公告)日:2012-05-17

    申请号:US13353823

    申请日:2012-01-19

    IPC分类号: H05K3/00 C23F1/00

    摘要: A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.

    摘要翻译: 一种用下游式等离子体处理工件的等离子体处理系统。 等离子体处理系统的处理室包括具有通常设置在供电电极和接地板之间的等离子体空腔的室盖,通过接地板与等离子体腔分离的处理空间以及用于保持的处理空间中的基板支撑 工件。 在等离子体腔中产生直接等离子体。 接地板适于具有从等离子体空腔中进入处理空间的等离子体中的电子和离子的开口,以提供自由基的下游型等离子体。 开口还可以消除等离子体腔和处理空间之间的光线的视线路径。 在另一方面,可以通过从室盖移除或插入至少一个可拆卸的侧壁部分来调节处理室的体积。

    PLASMA PROCESSING APPARATUS AND METHODS FOR REMOVING EXTRANEOUS MATERIAL FROM SELECTED AREAS ON A SUBSTRATE
    5.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHODS FOR REMOVING EXTRANEOUS MATERIAL FROM SELECTED AREAS ON A SUBSTRATE 有权
    等离子体处理装置和从基板上选择的区域去除特殊材料的方法

    公开(公告)号:US20100075505A1

    公开(公告)日:2010-03-25

    申请号:US12614551

    申请日:2009-11-09

    IPC分类号: H01L21/3065

    摘要: Apparatus and methods for shielding a feature projecting from a first area on a substrate to a plasma while simultaneously removing extraneous material from a different area on the substrate with the plasma. The apparatus includes at least one concavity positioned and dimensioned to receive the feature such that the feature is shielded from the plasma. The apparatus further includes a window through which the plasma removes the extraneous material. The method generally includes removing the extraneous material while shielding the feature against plasma exposure.

    摘要翻译: 用于屏蔽从衬底上的第一区域突出到等离子体的特征的装置和方法,同时使用等离子体从衬底上的不同区域去除外来材料。 该装置包括至少一个位置和尺寸以容纳特征的凹陷,使得该特征与等离子体屏蔽。 该装置还包括一个窗口,等离子体通过这个窗口去除外来材料。 该方法通常包括去除外来材料,同时屏蔽特征免受等离子体暴露。

    Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
    6.
    发明授权
    Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate 有权
    等离子体处理装置和从衬底上的选定区域去除外来材料的方法

    公开(公告)号:US08329590B2

    公开(公告)日:2012-12-11

    申请号:US12614551

    申请日:2009-11-09

    IPC分类号: H01L21/302

    摘要: Apparatus and methods for shielding a feature projecting from a first area on a substrate to a plasma while simultaneously removing extraneous material from a different area on the substrate with the plasma. The apparatus includes at least one concavity positioned and dimensioned to receive the feature such that the feature is shielded from the plasma. The apparatus further includes a window through which the plasma removes the extraneous material. The method generally includes removing the extraneous material while shielding the feature against plasma exposure.

    摘要翻译: 用于屏蔽从衬底上的第一区域突出到等离子体的特征的装置和方法,同时使用等离子体从衬底上的不同区域去除外来材料。 该装置包括至少一个位置和尺寸以容纳特征的凹陷,使得该特征与等离子体屏蔽。 该装置还包括一个窗口,等离子体通过这个窗口去除外来材料。 该方法通常包括去除外来材料,同时屏蔽特征免受等离子体暴露。

    Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
    7.
    发明授权
    Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes 有权
    用于在多个电极之间均匀分布射频功率的等离子体处理系统和方法

    公开(公告)号:US08333166B2

    公开(公告)日:2012-12-18

    申请号:US13100605

    申请日:2011-05-04

    摘要: Plasma treatment systems and methods for distributing RF energy to electrodes in a plasma treatment system. The plasma treatment system includes power and ground busses, positive and negative phase primary electrode busses, and positive and negative phase secondary electrode busses. The power and ground busses are coupled to the secondary electrode busses by isolation transformers so that the negative phase secondary electrode buss is provided with an RF signal that is 180 degrees out of phase with the RF signal supplied to the positive phase secondary electrode buss. The secondary electrode busses are coupled to respective positive and negative phase primary electrode busses by capacitors. The primary electrode busses are each coupled to electrodes in the vacuum chamber. Load coils coupling the primary electrode busses to an RF ground may cooperative with the capacitors to adjust the input impedance at the power buss.

    摘要翻译: 用于在等离子体处理系统中将RF能量分配到电极的等离子体处理系统和方法。 等离子体处理系统包括电源和接地总线,正负相母线总线以及正负相辅助电机总线。 功率和接地总线通过隔离变压器耦合到次级电池总线,使得负相位二次电池总线上提供与提供给正相二次电极母线的RF信号相差180度的RF信号。 二次电极总线通过电容器耦合到相应的正相和主相母线总线。 主电极总线各自耦合到真空室中的电极。 将主电极母线耦合到RF地的负载线圈可以与电容器协调以调节功率总线处的输入阻抗。

    PLASMA TREATMENT SYSTEMS AND METHODS FOR UNIFORMLY DISTRIBUTING RADIOFREQUENCY POWER BETWEEN MULTIPLE ELECTRODES
    8.
    发明申请
    PLASMA TREATMENT SYSTEMS AND METHODS FOR UNIFORMLY DISTRIBUTING RADIOFREQUENCY POWER BETWEEN MULTIPLE ELECTRODES 有权
    等离子体处理系统和均匀分布多个电极之间的射频功率的方法

    公开(公告)号:US20120279658A1

    公开(公告)日:2012-11-08

    申请号:US13100605

    申请日:2011-05-04

    摘要: Plasma treatment systems and methods for distributing RF energy to electrodes in a plasma treatment system. The plasma treatment system includes power and ground busses, positive and negative phase primary electrode busses, and positive and negative phase secondary electrode busses. The power and ground busses are coupled to the secondary electrode busses by isolation transformers so that the negative phase secondary electrode buss is provided with an RF signal that is 180 degrees out of phase with the RF signal supplied to the positive phase secondary electrode buss. The secondary electrode busses are coupled to respective positive and negative phase primary electrode busses by capacitors. The primary electrode busses are each coupled to electrodes in the vacuum chamber. Load coils coupling the primary electrode busses to an RF ground may cooperative with the capacitors to adjust the input impedance at the power buss.

    摘要翻译: 用于在等离子体处理系统中将RF能量分配到电极的等离子体处理系统和方法。 等离子体处理系统包括电源和接地总线,正负相母线总线以及正负相辅助电机总线。 功率和接地总线通过隔离变压器耦合到次级电池总线,使得负相位二次电池总线上提供与提供给正相二次电极母线的RF信号相差180度的RF信号。 二次电极总线通过电容器耦合到相应的正相和主相母线总线。 主电极总线各自耦合到真空室中的电极。 将主电极母线耦合到RF地的负载线圈可以与电容器协调以调节功率总线处的输入阻抗。

    MAGNETIC CLIPS AND SUBSTRATE HOLDERS FOR USE IN A PLASMA PROCESSING SYSTEM
    10.
    发明申请
    MAGNETIC CLIPS AND SUBSTRATE HOLDERS FOR USE IN A PLASMA PROCESSING SYSTEM 有权
    用于等离子体处理系统的磁性夹具和基板支架

    公开(公告)号:US20100194505A1

    公开(公告)日:2010-08-05

    申请号:US12364888

    申请日:2009-02-03

    IPC分类号: H01F7/20

    摘要: Magnetic clips for use with a substrate holder for holding a substrate in a processing chamber of a plasma treatment system. The clip includes first and second body members each having a clamping surface and a magnet. The first body member is configured to be mechanically connected with the substrate holder. The second body member is pivotally connected by a hinge with the first body member for movement relative to the first body member between closed and opened positions. In the closed position, an edge region of the substrate is positioned between the clamping surfaces. In the opened position, the edge region is released. The magnet on the second body member magnetically attracts the magnet on the first body member, when the second body member is in the closed position, to apply a force that restrains movement of the edge region of the substrate relative to the clamping surfaces.

    摘要翻译: 用于将衬底保持在等离子体处理系统的处理室中的衬底保持器使用的磁性夹具。 夹具包括每个具有夹紧表面和磁体的第一和第二主体构件。 第一本体构件被构造成与衬底保持器机械连接。 第二主体构件通过铰链枢转地连接有第一主体构件,用于相对于第一主体构件在关闭位置和打开位置之间移动。 在关闭位置,衬底的边缘区域位于夹紧表面之间。 在打开位置,边缘区域被释放。 当第二主体构件处于关闭位置时,第二主体构件上的磁体磁吸引第一主体构件上的磁体,以施加限制基板的边缘区域相对于夹紧表面的移动的力。