公开(公告)号：US06663792B2

公开(公告)日：2003-12-16

申请号：US09727052

申请日：2000-11-30

申请人： Robert T. Fayfield ,  Brent Schwab

发明人： Robert T. Fayfield ,  Brent Schwab

IPC分类号： C03C1500

CPC分类号： H01L21/02046 ,  C23C16/481 ,  H01L21/67115

摘要： The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

摘要翻译： 本发明的装置提供了UV源用于加热基底和促进治疗基质所必需的光化学的双重用途。 本发明还提供了一种通过在第一功率水平下通过UV辐射将衬底加热至高于环境温度并通过将衬底暴露于光化学（UV）反应性化学物质或反应性化学品来调理衬底来处理衬底的方法， 可以在第二功率水平的UV辐射的存在下与基底表面上的化合物反应以形成光化学反应性化合物。

公开(公告)号：US06221168B1

公开(公告)日：2001-04-24

申请号：US09098096

申请日：1998-06-16

申请人： Lawrence E. Carter ,  Brent Schwab ,  Robert T. Fayfield

发明人： Lawrence E. Carter ,  Brent Schwab ,  Robert T. Fayfield

IPC分类号： B08B500

CPC分类号： H01L21/31116

摘要： A method for treating a microelectronics substrate to produce a surface with improved characteristics for subsequent processing. The substrate is treated with HF, IPA, and an inert gas in a narrow range of conditions to remove unwanted oxide layers. The resulting surface is useful for processes like epitaxial deposition which benefit from a clean silicon surface with a low oxygen content.

摘要翻译： 一种用于处理微电子衬底以产生具有改进的特性用于后续处理的表面的方法。 在窄范围的条件下用HF，IPA和惰性气体处理衬底以除去不需要的氧化物层。 所得到的表面可用于从具有低氧含量的干净硅表面获益的外延沉积等工艺。

公开(公告)号：US06287413B1

公开(公告)日：2001-09-11

申请号：US09464780

申请日：1999-12-17

申请人： Robert T. Fayfield ,  Brent Schwab

发明人： Robert T. Fayfield ,  Brent Schwab

IPC分类号： C23F102

CPC分类号： H01L21/02046 ,  C23C16/481 ,  H01L21/67115

摘要： The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

摘要翻译： 本发明的装置提供了UV源用于加热基底和促进基底处理所必需的光化学的双重用途。本发明还提供了一种通过将基底加热到上述温度来处理基底的方法 环境通过UV辐射处于第一功率水平并且通过将衬底暴露于光化学（UV）反应性化学品或可与基底表面上的化合物反应以形成光化学反应性化合物的反应性化学品来调理衬底， 在第二功率水平下存在UV辐射。

公开(公告)号：US6165273A

公开(公告)日：2000-12-26

申请号：US955355

申请日：1997-10-21

申请人： Robert T. Fayfield ,  Brent Schwab

发明人： Robert T. Fayfield ,  Brent Schwab

IPC分类号： C23C16/48 ,  H01L21/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/02046 ,  C23C16/481 ,  H01L21/67115

摘要： The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate.The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

公开(公告)号：US06465374B1

公开(公告)日：2002-10-15

申请号：US09482222

申请日：2000-01-13

申请人： Jeffery W. Butterbaugh ,  Brent Schwab

发明人： Jeffery W. Butterbaugh ,  Brent Schwab

IPC分类号： H01L2100

CPC分类号： H01L21/02046 ,  C23C16/481 ,  H01L21/67115 ,  Y10S438/906 ,  Y10S977/841

摘要： A semiconductor substrate is heated via exposure to ultraviolet radiation substantially in the absence of a halogen containing chemical and subsequently exposed to a halogen-containing gas in the absence of ultraviolet radiation to remove contaminants therefrom.

摘要翻译： 通过暴露于基本上不含卤素化学品的紫外线辐射来加热半导体衬底，随后在不存在紫外线辐射的情况下暴露于含卤素气体以除去其中的污染物。

公开(公告)号：US20060272677A1

公开(公告)日：2006-12-07

申请号：US11156763

申请日：2005-06-20

申请人： Nam Lee ,  Philip Clark ,  Brent Schwab

发明人： Nam Lee ,  Philip Clark ,  Brent Schwab

IPC分类号： C23G1/00 ,  C23G1/02 ,  B08B3/00

CPC分类号： H01L21/02052 ,  B08B3/08 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/0206

摘要： The present invention relates to cleaning processes for semiconductor substrates. More particularly, the present inventive method can provide enhanced particle removal efficiencies at a given material loss. In fact, in certain embodiments, the present method can achieve particle removal efficiencies of at least about 90%, while yet removing less than about 2 angstroms of any oxide present on the semiconductor substrate. As such, the present methods find particular applicability in the processing of advanced technology nodes.

摘要翻译： 本发明涉及半导体基板的清洗工艺。 更具体地，本发明的方法可以在给定的材料损失下提供增强的颗粒去除效率。 事实上，在某些实施方案中，本发明的方法可以实现至少约90％的颗粒去除效率，同时除去少于约2埃的半导体衬底上存在的任何氧化物。 因此，本方法在高级技术节点的处理中具有特殊的适用性。

公开(公告)号：US20050032293A1

公开(公告)日：2005-02-10

申请号：US10894319

申请日：2004-07-19

申请人： Philip Clark ,  Kurt Christenson ,  Brent Schwab

发明人： Philip Clark ,  Kurt Christenson ,  Brent Schwab

IPC分类号： H01L21/306 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/31 ,  H01L21/469

CPC分类号： H01L21/31138 ,  H01L21/02063 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/3125 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides improvements to the use of silyating agents in semiconductor processing. More particularly, the silyating agents may be provided in combination with a substantially non-flammable ether, so that the combination is substantially non-flammable. Additionally, the silyating agent may be utilized in vapor form, or applied in conjunction with the electromagnetic radiation. Each of these embodiments can enhance the usability of the silyating agent, i.e., by rendering the silyating agent more safe, more easily utilized in a variety of processing equipment and/or by enhancing the passivation efficacy/efficiency of the silyating agent.

摘要翻译： 本发明提供了在半导体加工中使用硅烷化剂的改进。 更具体地说，可以与基本上不可燃的醚组合提供该酯化剂，使得该组合基本上是不可燃的。 另外，可以以蒸气形式使用，也可以与电磁辐射结合使用。 这些实施方案中的每一个都可以增强水解剂的可用性，即通过使得silyating剂更安全，更容易地用于各种加工设备和/或通过提高所述silyating剂的钝化效率/效率。