-
公开(公告)号:US09382621B2
公开(公告)日:2016-07-05
申请号:US12700484
申请日:2010-02-04
申请人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号: C23C16/509 , C23C16/458 , H01J37/32 , H01L21/67
CPC分类号: C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译: 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频(RF)装置。 该方法包括相对于另一个电极移动一个电极,并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径,耦合到腔室的底部的RF器件和 电极或其组合。
-
2.
公开(公告)号:US20120103989A1
公开(公告)日:2012-05-03
申请号:US13349307
申请日:2012-01-12
IPC分类号: B65D43/26
CPC分类号: C23C16/54 , C23C16/45517
摘要: A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
摘要翻译: 提供一种用于密封处理室的开口的方法和装置。 在一个实施例中,本发明通常提供集成在处理室的壁内的封闭构件,用于密封腔室壁内的开口。 在另一个实施例中,本发明提供了一种封闭构件,其构造成将处理室的壁中的开口与室的内部密封。
-
公开(公告)号:US08083853B2
公开(公告)日:2011-12-27
申请号:US10889683
申请日:2004-07-12
申请人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号: C23C16/00 , C23C16/455 , H01L21/3065
CPC分类号: H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。
-
公开(公告)号:US06517303B1
公开(公告)日:2003-02-11
申请号:US09082484
申请日:1998-05-20
申请人: John M. White , Norman L. Turner , Robin L. Tiner , Ernst Keller , Shinichi Kurita , Wendell T. Blonigan , David E. Berkstresser
发明人: John M. White , Norman L. Turner , Robin L. Tiner , Ernst Keller , Shinichi Kurita , Wendell T. Blonigan , David E. Berkstresser
IPC分类号: B65G133
CPC分类号: H01L21/67748 , C03B25/08 , C03B29/08 , C03B35/142 , C03B35/202 , C03B2225/02 , C03C17/002 , F27D3/00 , F27D5/00 , H01L21/67173 , H01L21/67236 , Y02P40/57 , Y10S414/135 , Y10S414/139
摘要: The present invention provides an apparatus and method for substrate transport. In systems according to the invention, at least a first and second chamber are provided. The first chamber may be a load lock and the second chamber a processing chamber. A substrate transfer shuttle is provided and is moveable along a linear path defined by guide rollers between one position in the first chamber and another position in the second chamber. In this way, the substrate may be transferred, in both a forward and a reverse direction, between the first chamber and the second chamber. The substrate transfer shuttle is structured so that a substrate may be removed therefrom by moving a support in one of the chambers from a lowered position to an intermediate position, after which the substrate transfer shuttle may be removed from the chamber.
-
公开(公告)号:US20110146577A1
公开(公告)日:2011-06-23
申请号:US12975708
申请日:2010-12-22
申请人: SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
发明人: SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
IPC分类号: C23C16/455 , C23C16/458 , C23C16/50 , B05B1/14
CPC分类号: C23C16/4585 , C23C16/45565 , C23C16/5096 , H01J37/32174 , H01J37/32449 , H01J37/32541 , H01J37/3255
摘要: Embodiments of the present invention generally relate to a gas distribution showerhead having insulated corner regions to reduce arcing and improve deposition uniformity control. In one embodiment, the gas distribution showerhead is formed of a conductive material with material from the corner regions removed. Corner members formed substantially in the shape of the removed portion of corner regions are attached to the conductive showerhead. The corner members may be made of a material having electrical insulating properties, such as a ceramic or insulating polymer.
摘要翻译: 本发明的实施方案一般涉及具有绝缘拐角区域以减少电弧放电并改善沉积均匀性控制的气体分配喷头。 在一个实施例中,气体分配喷头由导电材料形成,其中去除了角部区域的材料。 基本上形成角部区域的去除部分形状的角部件被附接到导电花洒。 角部件可以由具有电绝缘性的材料制成,例如陶瓷或绝缘聚合物。
-
公开(公告)号:US20100196626A1
公开(公告)日:2010-08-05
申请号:US12700484
申请日:2010-02-04
申请人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号: C23C16/509
CPC分类号: C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译: 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频(RF)装置。 该方法包括相对于另一个电极移动一个电极,并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径,耦合到腔室的底部的RF器件和 电极或其组合。
-
公开(公告)号:US20080268173A1
公开(公告)日:2008-10-30
申请号:US12037885
申请日:2008-02-26
申请人: John M. White , Shinichi Kurita , Robin L. Tiner
发明人: John M. White , Shinichi Kurita , Robin L. Tiner
IPC分类号: H05H1/34
CPC分类号: H01J37/32449 , C23C16/44 , C23C16/5096 , H01J37/3244 , H01J37/32495 , H01J37/32623 , H01J2237/3321 , H01J2237/3325
摘要: The present invention generally comprises a backing plate reinforcement apparatus for use in a plasma enhanced chemical vapor deposition apparatus. When processing large area substrates, the backing plate extending across the chamber may also be quite large. By supporting a central area of the backing plate with a frame structure, the backing plate may be maintained substantially planar. Alternatively, as necessary, the contour of the backing plate may be adjusted to suit the particular needs of the process.
摘要翻译: 本发明通常包括用于等离子体增强化学气相沉积设备中的背板加强装置。 当处理大面积基板时,延伸穿过室的背板也可能相当大。 通过用框架结构支撑背板的中心区域,背板可以保持基本上平面。 或者,根据需要,可以调整背板的轮廓以适应该方法的特定需要。
-
公开(公告)号:US06746198B2
公开(公告)日:2004-06-08
申请号:US09881009
申请日:2001-06-13
申请人: John M. White , Norman L. Turner , Robin L. Tiner , Ernst Keller , Shinichi Kurita , Wendell T. Blonigan , David E. Berkstresser
发明人: John M. White , Norman L. Turner , Robin L. Tiner , Ernst Keller , Shinichi Kurita , Wendell T. Blonigan , David E. Berkstresser
IPC分类号: B65G4907
CPC分类号: H01L21/67748 , C03B25/08 , C03B29/08 , C03B35/142 , C03B35/202 , C03B2225/02 , C03C17/002 , F27D3/00 , F27D5/00 , H01L21/67173 , H01L21/67236 , Y02P40/57 , Y10S414/135 , Y10S414/139
摘要: The present invention provides an apparatus and method for substrate transport. In systems according to the invention, at least a first and second chamber are provided. The first chamber may be a load lock and the second chamber a processing chamber. A substrate transfer shuttle is provided and is moveable along a linear path defined by guide rollers between one position in the first chamber and another position in the second chamber. In this way, the substrate may be transferred, in both a forward and a reverse direction, between the first chamber and the second chamber. The substrate transfer shuttle is structured so that a substrate may be removed therefrom by moving a support in one of the chambers from a lowered position to an intermediate position, after which the substrate transfer shuttle may be removed from the chamber.
摘要翻译: 本发明提供了一种用于基板输送的装置和方法。 在根据本发明的系统中,提供至少第一和第二腔室。 第一室可以是装载锁,第二室是处理室。 提供基板传送梭,并且可沿着由第一室中的一个位置和第二室中的另一位置之间的导辊限定的线性路径移动。 以这种方式,可以在第一室和第二室之间沿正向和反向的方向转移衬底。 衬底传送穿梭被构造成使得可以通过将其中一个室中的支撑件从降低位置移动到中间位置而从其中移除基板,之后可以从室移除基板传送梭。
-
9.
公开(公告)号:US09458538B2
公开(公告)日:2016-10-04
申请号:US13349307
申请日:2012-01-12
IPC分类号: C23C16/455 , C23C16/54
CPC分类号: C23C16/54 , C23C16/45517
摘要: A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
摘要翻译: 提供一种用于密封处理室的开口的方法和装置。 在一个实施例中,本发明通常提供集成在处理室的壁内的封闭构件,用于密封腔室壁内的开口。 在另一个实施例中,本发明提供了一种封闭构件,其构造成将处理室的壁中的开口与室的内部密封。
-
公开(公告)号:US08733279B2
公开(公告)日:2014-05-27
申请号:US12037885
申请日:2008-02-26
申请人: John M. White , Shinichi Kurita , Robin L. Tiner
发明人: John M. White , Shinichi Kurita , Robin L. Tiner
IPC分类号: C23C16/00 , H01L21/306 , C23F1/00
CPC分类号: H01J37/32449 , C23C16/44 , C23C16/5096 , H01J37/3244 , H01J37/32495 , H01J37/32623 , H01J2237/3321 , H01J2237/3325
摘要: The present invention generally comprises a backing plate reinforcement apparatus for use in a plasma enhanced chemical vapor deposition apparatus. When processing large area substrates, the backing plate extending across the chamber may also be quite large. By supporting a central area of the backing plate with a frame structure, the backing plate may be maintained substantially planar. Alternatively, as necessary, the contour of the backing plate may be adjusted to suit the particular needs of the process.
摘要翻译: 本发明通常包括用于等离子体增强化学气相沉积设备中的背板加强装置。 当处理大面积基板时,延伸穿过室的背板也可能相当大。 通过用框架结构支撑背板的中心区域,背板可以保持基本上平面。 或者,根据需要,可以调整背板的轮廓以适应该方法的特定需要。
-
-
-
-
-
-
-
-
-