Plasma uniformity control by gas diffuser hole design
    3.
    发明授权
    Plasma uniformity control by gas diffuser hole design 有权
    通过气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号:US08083853B2

    公开(公告)日:2011-12-27

    申请号:US10889683

    申请日:2004-07-12

    摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    摘要翻译: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

    PECVD PROCESS CHAMBER BACKING PLATE REINFORCEMENT
    7.
    发明申请
    PECVD PROCESS CHAMBER BACKING PLATE REINFORCEMENT 有权
    PECVD过程室背板加固

    公开(公告)号:US20080268173A1

    公开(公告)日:2008-10-30

    申请号:US12037885

    申请日:2008-02-26

    IPC分类号: H05H1/34

    摘要: The present invention generally comprises a backing plate reinforcement apparatus for use in a plasma enhanced chemical vapor deposition apparatus. When processing large area substrates, the backing plate extending across the chamber may also be quite large. By supporting a central area of the backing plate with a frame structure, the backing plate may be maintained substantially planar. Alternatively, as necessary, the contour of the backing plate may be adjusted to suit the particular needs of the process.

    摘要翻译: 本发明通常包括用于等离子体增强化学气相沉积设备中的背板加强装置。 当处理大面积基板时,延伸穿过室的背板也可能相当大。 通过用框架结构支撑背板的中心区域,背板可以保持基本上平面。 或者,根据需要,可以调整背板的轮廓以适应该方法的特定需要。

    PECVD process chamber backing plate reinforcement
    10.
    发明授权
    PECVD process chamber backing plate reinforcement 有权
    PECVD处理室背板加强

    公开(公告)号:US08733279B2

    公开(公告)日:2014-05-27

    申请号:US12037885

    申请日:2008-02-26

    IPC分类号: C23C16/00 H01L21/306 C23F1/00

    摘要: The present invention generally comprises a backing plate reinforcement apparatus for use in a plasma enhanced chemical vapor deposition apparatus. When processing large area substrates, the backing plate extending across the chamber may also be quite large. By supporting a central area of the backing plate with a frame structure, the backing plate may be maintained substantially planar. Alternatively, as necessary, the contour of the backing plate may be adjusted to suit the particular needs of the process.

    摘要翻译: 本发明通常包括用于等离子体增强化学气相沉积设备中的背板加强装置。 当处理大面积基板时,延伸穿过室的背板也可能相当大。 通过用框架结构支撑背板的中心区域,背板可以保持基本上平面。 或者,根据需要,可以调整背板的轮廓以适应该方法的特定需要。