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1.
公开(公告)号:US20120103989A1
公开(公告)日:2012-05-03
申请号:US13349307
申请日:2012-01-12
IPC分类号: B65D43/26
CPC分类号: C23C16/54 , C23C16/45517
摘要: A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
摘要翻译: 提供一种用于密封处理室的开口的方法和装置。 在一个实施例中,本发明通常提供集成在处理室的壁内的封闭构件,用于密封腔室壁内的开口。 在另一个实施例中,本发明提供了一种封闭构件,其构造成将处理室的壁中的开口与室的内部密封。
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2.
公开(公告)号:US09458538B2
公开(公告)日:2016-10-04
申请号:US13349307
申请日:2012-01-12
IPC分类号: C23C16/455 , C23C16/54
CPC分类号: C23C16/54 , C23C16/45517
摘要: A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
摘要翻译: 提供一种用于密封处理室的开口的方法和装置。 在一个实施例中,本发明通常提供集成在处理室的壁内的封闭构件,用于密封腔室壁内的开口。 在另一个实施例中,本发明提供了一种封闭构件,其构造成将处理室的壁中的开口与室的内部密封。
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3.
公开(公告)号:US20090114153A1
公开(公告)日:2009-05-07
申请号:US12252055
申请日:2008-10-15
IPC分类号: C23C16/513 , B65D51/00 , B65D53/00 , B65D43/14 , B65D43/26
CPC分类号: C23C16/54 , C23C16/45517
摘要: A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
摘要翻译: 提供一种用于密封处理室的开口的方法和装置。 在一个实施例中,本发明通常提供集成在处理室的壁内的封闭构件,用于密封腔室壁内的开口。 在另一个实施例中,本发明提供了一种封闭构件,其构造成将处理室的壁中的开口与室的内部密封。
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公开(公告)号:US09382621B2
公开(公告)日:2016-07-05
申请号:US12700484
申请日:2010-02-04
申请人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号: C23C16/509 , C23C16/458 , H01J37/32 , H01L21/67
CPC分类号: C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译: 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频(RF)装置。 该方法包括相对于另一个电极移动一个电极,并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径,耦合到腔室的底部的RF器件和 电极或其组合。
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公开(公告)号:US09758869B2
公开(公告)日:2017-09-12
申请号:US12779167
申请日:2010-05-13
申请人: Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L Tiner , John M White , Shinichi Kurita
发明人: Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L Tiner , John M White , Shinichi Kurita
IPC分类号: C23C16/00 , H01J37/00 , C23C16/455 , C23C16/44 , C23C16/509 , H01J37/32
CPC分类号: C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要: Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
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公开(公告)号:US08083853B2
公开(公告)日:2011-12-27
申请号:US10889683
申请日:2004-07-12
申请人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号: C23C16/00 , C23C16/455 , H01L21/3065
CPC分类号: H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。
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公开(公告)号:US20100288197A1
公开(公告)日:2010-11-18
申请号:US12779167
申请日:2010-05-13
申请人: Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L. Tiner , John M. White , Shinichi Kurita
发明人: Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L. Tiner , John M. White , Shinichi Kurita
IPC分类号: C23C16/455 , C23C16/00
CPC分类号: C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要: Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
摘要翻译: 本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。 在大面积的平行板RF处理室中,掌握RF返回路径可能具有挑战性。 射频是RF处理室遇到的一个常见问题。 为了减少RF处理室中的电弧,带可以耦合到基座以缩短RF返回路径,陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座,并且阳极化涂层可以沉积在 最靠近室壁的淋浴头。 阳极化涂层可以减少喷头和室壁之间的电弧,并因此增强膜的性质并增加沉积速率。
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公开(公告)号:US20110146577A1
公开(公告)日:2011-06-23
申请号:US12975708
申请日:2010-12-22
申请人: SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
发明人: SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
IPC分类号: C23C16/455 , C23C16/458 , C23C16/50 , B05B1/14
CPC分类号: C23C16/4585 , C23C16/45565 , C23C16/5096 , H01J37/32174 , H01J37/32449 , H01J37/32541 , H01J37/3255
摘要: Embodiments of the present invention generally relate to a gas distribution showerhead having insulated corner regions to reduce arcing and improve deposition uniformity control. In one embodiment, the gas distribution showerhead is formed of a conductive material with material from the corner regions removed. Corner members formed substantially in the shape of the removed portion of corner regions are attached to the conductive showerhead. The corner members may be made of a material having electrical insulating properties, such as a ceramic or insulating polymer.
摘要翻译: 本发明的实施方案一般涉及具有绝缘拐角区域以减少电弧放电并改善沉积均匀性控制的气体分配喷头。 在一个实施例中,气体分配喷头由导电材料形成,其中去除了角部区域的材料。 基本上形成角部区域的去除部分形状的角部件被附接到导电花洒。 角部件可以由具有电绝缘性的材料制成,例如陶瓷或绝缘聚合物。
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公开(公告)号:US20100196626A1
公开(公告)日:2010-08-05
申请号:US12700484
申请日:2010-02-04
申请人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号: C23C16/509
CPC分类号: C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译: 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频(RF)装置。 该方法包括相对于另一个电极移动一个电极,并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径,耦合到腔室的底部的RF器件和 电极或其组合。
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公开(公告)号:US09200368B2
公开(公告)日:2015-12-01
申请号:US13207227
申请日:2011-08-10
申请人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人: Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号: C23C16/455 , C23C16/34 , C23C16/509 , H01J37/32
CPC分类号: H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。
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