公开(公告)号：US20090275206A1

公开(公告)日：2009-11-05

申请号：US12143146

申请日：2008-06-20

申请人： Dan Katz ,  David Palagashvili ,  Brian K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

发明人： Dan Katz ,  David Palagashvili ,  Brian K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449

摘要： A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge.

摘要翻译： 钝化物质前体气体以第一流速被提供到内部区域，同时以蚀刻剂物质前体气体以第二流速流动环形中间区域。 蚀刻速率的径向分布由第一和第二流速的比率控制。 蚀刻临界尺寸偏置在晶片上的径向分布由通向晶片边缘的钝化气体的流速来控制。

公开(公告)号：US08236133B2

公开(公告)日：2012-08-07

申请号：US12143092

申请日：2008-06-20

申请人： Dan Katz ,  David Palagashvili ,  Brian K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

发明人： Dan Katz ,  David Palagashvili ,  Brian K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

IPC分类号： H01L21/311

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.

摘要翻译： 用于等离子体反应器的天花板的气体分配组件包括中心供给的轮毂和位于中心供给轮毂下方的相等路径长度的分配气体歧管。

公开(公告)号：US20080149592A1

公开(公告)日：2008-06-26

申请号：US11986545

申请日：2007-11-20

申请人： Rodolfo P. Belen ,  Edward P. Hammond ,  Brian K. Hatcher ,  Dan Katz ,  Theodoros Panagopoulos ,  Alexander M. Paterson ,  Valentin N. Todorow

发明人： Rodolfo P. Belen ,  Edward P. Hammond ,  Brian K. Hatcher ,  Dan Katz ,  Theodoros Panagopoulos ,  Alexander M. Paterson ,  Valentin N. Todorow

IPC分类号： B44C1/22

CPC分类号： H01L21/31116 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32449 ,  H01L21/033

摘要： Line edge smoothness in a hardmask etch process is improved by widening the chamber pressure process window by applying VHF power and increasing the chamber pressure to near the maximum value of the widened process window.

摘要翻译： 硬掩模蚀刻工艺中的线边缘平滑度通过使用VHF功率加宽腔室压力过程窗口并将腔室压力增加到接近加宽过程窗口的最大值来改善。

公开(公告)号：US20090272492A1

公开(公告)日：2009-11-05

申请号：US12143092

申请日：2008-06-20

申请人： Dan Katz ,  David Palagashvili ,  Brain K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

发明人： Dan Katz ,  David Palagashvili ,  Brain K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.

摘要翻译： 用于等离子体反应器的天花板的气体分配组件包括中心供给的轮毂和位于中心供给轮毂下方的相等路径长度的分配气体歧管。

公开(公告)号：US20080193673A1

公开(公告)日：2008-08-14

申请号：US11998458

申请日：2007-11-28

申请人： Alexander M. Paterson ,  John P. Holland ,  Theodoros Panagopoulos ,  Edward P. Hammond ,  Brian K. Hatcher ,  Valentin N. Todorow ,  Dan Katz

发明人： Alexander M. Paterson ,  John P. Holland ,  Theodoros Panagopoulos ,  Edward P. Hammond ,  Brian K. Hatcher ,  Valentin N. Todorow ,  Dan Katz

IPC分类号： H05H1/34

CPC分类号： H01J37/32422 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32449

摘要： A method of processing a workpiece in a plasma reactor chamber is disclosed. The method includes providing an in-situ gas distribution plate between the workpiece and a ceiling of the chamber that divides the chamber into upper and lower chamber regions. The method further includes providing in the in-situ plate an array of feed-through openings with different opening sizes to present a non-uniform distribution of gas flow resistance for gas flow from the upper chamber region to the lower chamber region. A first process gas is introduced into the upper chamber region and a plasma is generated a plasma in the upper chamber region. A second process gas is introduced in the lower chamber region through gas injection orifices of the in-situ gas distribution plate.

摘要翻译： 公开了一种在等离子体反应器室中处理工件的方法。 该方法包括在工件和腔室的天花板之间提供原位气体分配板，该室将室分成上腔室和下室区域。 该方法还包括在原位板中提供具有不同开口尺寸的馈通开口阵列，以呈现从上室区域到下腔室区域的气流的气流阻力的不均匀分布。 将第一工艺气体引入上室区域，并且在上室区域中产生等离子体。 第二工艺气体通过原位气体分配板的气体注入孔引入下腔室区域。

公开(公告)号：US20080178805A1

公开(公告)日：2008-07-31

申请号：US11998468

申请日：2007-11-28

申请人： Alexander M. Paterson ,  John P. Holland ,  Theodoros Panagopoulos ,  Edward P. Hammond ,  Brian K. Hatcher ,  Valentin N. Todorow ,  Dan Katz

发明人： Alexander M. Paterson ,  John P. Holland ,  Theodoros Panagopoulos ,  Edward P. Hammond ,  Brian K. Hatcher ,  Valentin N. Todorow ,  Dan Katz

IPC分类号： C23C16/513

CPC分类号： H01J37/32422 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32449

摘要： A plasma reactor is provided for processing a workpiece such as a semiconductor wafer or a dielectric mask. The reactor chamber has a ceiling, a side wall and a workpiece support pedestal inside the chamber and facing the ceiling along an axis of symmetry and defining a chamber volume between the pedestal and the ceiling. An RF plasma source power applicator is provided at the ceiling. An in-situ electrode body inside the chamber lies divides the chamber into upper and lower chamber regions. The in-situ electrode comprises plural flow-through passages extending parallel to the axis and having different opening sizes, the passages being radially distributed by opening size in accordance with a desired radial distribution of gas flow resistance through the in-situ electrode body.

摘要翻译： 提供等离子体反应器来处理诸如半导体晶片或电介质掩模的工件。 反应器室具有在室内的天花板，侧壁和工件支撑基座，并且沿着对称轴面对天花板，并且限定基座和天花板之间的室容积。 在天花板处设置RF等离子体源功率施加器。 室内的原位电极体将腔室分为上腔室和下腔室。 原位电极包括平行于轴线延伸并且具有不同开口尺寸的多个流通通道，根据通过原位电极体的气流阻力的期望径向分布，通道径向分布为开口尺寸。

公开(公告)号：US07727413B2

公开(公告)日：2010-06-01

申请号：US11410717

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： G01L21/30

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J37/32165

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling plasma ion density by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入工艺区域，并通过控制VHF源功率的有效频率来控制等离子体离子密度。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。

公开(公告)号：US20080236490A1

公开(公告)日：2008-10-02

申请号：US11693089

申请日：2007-03-29

申请人： ALEXANDER PATERSON ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

发明人： ALEXANDER PATERSON ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

IPC分类号： C23C16/00

CPC分类号： H01J37/3244 ,  H01J37/32091 ,  H01J37/321

摘要： A plasma reactor for processing a workpiece includes a gas distribution showerhead having a lid, a manifold having a top surface facing the lid and a bottom surface opposing the top surface. Top surface channels in the manifold top surface form a first set of plural paths extending from a first gas input point to plural path ends of the top surface channels. Gas distribution orifices extend axially through the manifold at respective ones of the path ends. Bottom surface channels in the manifold bottom surface form plural paths extending from locations at each of the gas distribution orifices to plural gas distribution path ends. The showerhead further includes a showerhead piece facing the manifold bottom surface and having plural gas injection orifices extending through the showerhead piece.

摘要翻译： 用于加工工件的等离子体反应器包括具有盖的气体分配喷头，具有面向盖的顶表面的歧管和与顶表面相对的底表面。 歧管顶表面中的顶表面通道形成从第一气体输入点延伸到顶表面通道的多个路径端的多个路径的第一组。 气体分配孔在相应的路径端轴向延伸穿过歧管。 歧管底表面中的底表面通道形成从每个气体分配孔处的位置延伸到多个气体分配路径端部的多个路径。 淋浴头还包括面向歧管底面的喷头片，并具有延伸穿过喷头片的多个气体喷射孔。

公开(公告)号：US07264688B1

公开(公告)日：2007-09-04

申请号：US11411163

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32935 ,  H01J37/321

摘要： A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpiece support, a VHF power generator being coupled to the capacitively coupled source power applicator, a plasma bias power applicator or electrode in the workpiece support and an RF bias power generator coupled to the plasma bias power applicator. A controller adjusts the relative amounts of power simultaneously coupled to plasma in the chamber and conduit by the toroidal plasma source and by the capacitively coupled plasma source power applicator.

摘要翻译： 等离子体反应器包括具有RF功率施加器的环形等离子体源，RF发生器耦合到RF功率施加器。 反应器还包括在天花板或工件支撑件处的电容耦合的等离子体源功率施加器或电极，耦合到电容耦合的源功率施加器的VHF发电机，工件支架中的等离子体偏置功率施加器或电极，以及RF偏置 发电机耦合到等离子体偏置功率施加器。 控制器调节通过环形等离子体源和电容耦合的等离子体源功率施加器同时耦合到腔室和管道中的等离子体的功率的相对量。

公开(公告)号：US07780864B2

公开(公告)日：2010-08-24

申请号：US11410780

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： G01L21/30 ,  C23F1/00

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

摘要： A method of processing a workpiece in the chamber of a plasma reactor in which the plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.

摘要翻译： 一种在等离子体反应器的室中处理工件的方法，其中通过调节（VHF）电容耦合功率和电感耦合功率之间的比例来控制处理区域中的等离子体离子密度径向分布，同时继续 保持总等离子体源功率的水平。 该方法还可以包括对工件应用独立可调的LF偏置功率和HF偏置功率，并通过调整LF和HF偏置功率之间的比例来调节工件表面处离子能量的平均值和总体分布。