专利检索 ap:("Rohm Co., Ltd.") AND inv:"Masaki Kasai" 第 1 页

1.

发明授权
Semiconductor device and method for manufacturing semiconductor device 有权

公开(公告)号：US12057362B2

公开(公告)日：2024-08-06

申请号：US17349211

申请日：2021-06-16

申请人： ROHM CO., LTD.

发明人： Osamu Miyata , Masaki Kasai , Shingo Higuchi

IPC分类号： H01L23/48 , H01L21/78 , H01L23/00 , H01L23/29 , H01L23/31 , H01L23/528 , H01L23/544

CPC分类号： H01L23/3178 , H01L21/78 , H01L23/291 , H01L23/293 , H01L23/3114 , H01L23/3142 , H01L23/3171 , H01L23/3192 , H01L23/528 , H01L23/544 , H01L23/562 , H01L24/02 , H01L24/10 , H01L24/13 , H01L24/94 , H01L24/96 , H01L24/05 , H01L2223/5446 , H01L2224/02255 , H01L2224/0226 , H01L2224/02377 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05568 , H01L2224/05569 , H01L2224/05571 , H01L2224/05647 , H01L2224/12105 , H01L2224/13023 , H01L2224/13024 , H01L2224/13099 , H01L2224/131 , H01L2224/13124 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/014 , H01L2924/05042 , H01L2924/05442 , H01L2924/0665 , H01L2924/07025 , H01L2924/10161 , H01L2924/10253 , H01L2924/12042 , H01L2924/182 , H01L2924/186 , H01L2924/3025 , H01L24/13 , H01L2924/00 , H01L2924/12042 , H01L2924/00 , H01L2224/13 , H01L2924/00 , H01L2224/0239 , H01L2924/01029 , H01L2224/131 , H01L2924/00014 , H01L2224/05571 , H01L2924/00012 , H01L2224/05647 , H01L2924/00014 , H01L2224/05124 , H01L2924/00014

摘要： A semiconductor device includes a semiconductor chip having a passivation film, a stress relieving layer provided on the passivation film, and a groove formed in a periphery of a surface of the semiconductor chip, the groove being provided inside of an edge of the semiconductor chip, wherein the stress relieving layer is partly disposed in the groove.

2.

发明授权
Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法

公开(公告)号：US08928156B2

公开(公告)日：2015-01-06

申请号：US14306327

申请日：2014-06-17

申请人： Rohm Co., Ltd.

发明人： Osamu Miyata , Masaki Kasai , Shingo Higuchi

IPC分类号： H01L23/48 , H01L23/29

CPC分类号： H01L23/3178 , H01L21/78 , H01L23/291 , H01L23/293 , H01L23/3114 , H01L23/3142 , H01L23/3171 , H01L23/3192 , H01L23/528 , H01L23/544 , H01L23/562 , H01L24/02 , H01L24/05 , H01L24/10 , H01L24/13 , H01L24/94 , H01L24/96 , H01L2223/5446 , H01L2224/02255 , H01L2224/0226 , H01L2224/02377 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05568 , H01L2224/05569 , H01L2224/05571 , H01L2224/05647 , H01L2224/12105 , H01L2224/13023 , H01L2224/13024 , H01L2224/13099 , H01L2224/131 , H01L2224/13124 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/014 , H01L2924/05042 , H01L2924/05442 , H01L2924/0665 , H01L2924/07025 , H01L2924/10161 , H01L2924/10253 , H01L2924/12042 , H01L2924/182 , H01L2924/186 , H01L2924/3025 , H01L2924/00 , H01L2224/13 , H01L2924/00014 , H01L2924/00012

摘要： An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.

摘要翻译： 本发明的半导体器件包括具有钝化膜的半导体芯片和设置在钝化膜上方的密封树脂层，用于密封半导体芯片的正面。密封树脂层延伸到钝化膜的侧表面以覆盖侧表面。

3.

发明授权
Semiconductor device and method for manufacturing semiconductor device 有权

公开(公告)号：US09601441B2

公开(公告)日：2017-03-21

申请号：US15059278

申请日：2016-03-02

申请人： ROHM CO., LTD.

发明人： Osamu Miyata , Masaki Kasai , Shingo Higuchi

IPC分类号： H01L23/544 , H01L23/00 , H01L23/31 , H01L23/29 , H01L23/528

CPC分类号： H01L23/3178 , H01L21/78 , H01L23/291 , H01L23/293 , H01L23/3114 , H01L23/3142 , H01L23/3171 , H01L23/3192 , H01L23/528 , H01L23/544 , H01L23/562 , H01L24/02 , H01L24/05 , H01L24/10 , H01L24/13 , H01L24/94 , H01L24/96 , H01L2223/5446 , H01L2224/02255 , H01L2224/0226 , H01L2224/02377 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05568 , H01L2224/05569 , H01L2224/05571 , H01L2224/05647 , H01L2224/12105 , H01L2224/13023 , H01L2224/13024 , H01L2224/13099 , H01L2224/131 , H01L2224/13124 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/014 , H01L2924/05042 , H01L2924/05442 , H01L2924/0665 , H01L2924/07025 , H01L2924/10161 , H01L2924/10253 , H01L2924/12042 , H01L2924/182 , H01L2924/186 , H01L2924/3025 , H01L2924/00 , H01L2224/13 , H01L2924/00014 , H01L2924/00012

摘要： An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip, a groove formed in a periphery of a surface of the semiconductor chip being tapered toward a rear surface of the semiconductor chip, wherein the sealing resin layer is partly disposed in the groove.

4.

发明授权
Semiconductor device bonding with stress relief connection pads 有权
标题翻译：半导体器件与应力释放连接焊盘接合

公开(公告)号：US09018762B2

公开(公告)日：2015-04-28

申请号：US13866049

申请日：2013-04-19

申请人： Rohm Co., Ltd.

发明人： Masaki Kasai , Hiroshi Okumura

IPC分类号： H01L23/52 , H01L23/00 , H01L23/31

CPC分类号： H01L24/12 , H01L23/3114 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05007 , H01L2224/05018 , H01L2224/05027 , H01L2224/05082 , H01L2224/05541 , H01L2224/05547 , H01L2224/05552 , H01L2224/05557 , H01L2224/05559 , H01L2224/05572 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13006 , H01L2224/13099 , H01L2224/131 , H01L2924/00014 , H01L2924/0002 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/05042 , H01L2924/10253 , H01L2924/19043 , H01L2924/207 , H01L2924/00

摘要： An inventive semiconductor device includes: a semiconductor chip; an internal pad provided on a surface of the semiconductor chip for electrical connection; a surface protective film covering the surface of the semiconductor chip and having a pad opening from which the internal pad is exposed; a stress relief layer provided on the surface protective film and having an opening portion through which the internal pad exposed from the pad opening is exposed; a connection pad including an anchor buried in the pad opening and the opening portion and connected to the internal pad, and a projection provided integrally with the anchor as projecting on the stress relief layer, the projection having a width greater than an opening width of the opening portion; and a metal ball provided for external electrical connection as covering the projection of the connection pad.

摘要翻译： 本发明的半导体器件包括：半导体芯片; 设置在所述半导体芯片的表面上用于电连接的内部焊盘; 覆盖半导体芯片的表面并具有衬垫开口的表面保护膜，内部焊盘从该开口露出; 设置在所述表面保护膜上并具有开口部的应力消除层，从所述焊盘开口露出的所述内部焊盘暴露在所述开口部中; 连接垫，其包括埋在所述焊盘开口中的锚固件和所述开口部分并且连接到所述内部焊盘;以及突出部，其与所述锚固件一体地突出设置在所述应力消除层上，所述突出部的宽度大于所述开口部分以及设置用于外部电连接的金属球，以覆盖连接垫的突起。

5.

发明授权
Semiconductor device and method for manufacturing semiconductor device 有权

公开(公告)号：US10431516B2

公开(公告)日：2019-10-01

申请号：US15438268

申请日：2017-02-21

申请人： ROHM CO., LTD.

发明人： Osamu Miyata , Masaki Kasai , Shingo Higuchi

IPC分类号： H01L23/48 , H01L23/31 , H01L23/00 , H01L23/29 , H01L23/528 , H01L23/544 , H01L21/78

摘要： A semiconductor device includes a semiconductor chip having a passivation film, a stress relieving layer provided on the passivation film, and a groove formed in a periphery of a surface of the semiconductor chip, the groove being provided inside of an edge of the semiconductor chip, wherein the stress relieving layer is partly disposed in the groove.

6.

发明授权
Semiconductor device and method for manufacturing semiconductor device 有权

公开(公告)号：US11069591B2

公开(公告)日：2021-07-20

申请号：US16559927

申请日：2019-09-04

申请人： ROHM CO., LTD.

发明人： Osamu Miyata , Masaki Kasai , Shingo Higuchi

IPC分类号： H01L23/48 , H01L23/31 , H01L23/00 , H01L23/29 , H01L23/528 , H01L23/544 , H01L21/78

摘要： A semiconductor device includes a semiconductor chip having a passivation film, a stress relieving layer provided on the passivation film, and a groove formed in a periphery of a surface of the semiconductor chip, the groove being provided inside of an edge of the semiconductor chip, wherein the stress relieving layer is partly disposed in the groove.

7.

发明授权
Semiconductor device with front and back side resin layers having different thermal expansion coefficient and elasticity modulus 有权
标题翻译：具有不同热膨胀系数和弹性模量的正面和背面树脂层的半导体器件

公开(公告)号：US08723339B2

公开(公告)日：2014-05-13

申请号：US14083492

申请日：2013-11-19

申请人： Rohm Co., Ltd.

发明人： Masaki Kasai , Osamu Miyata

IPC分类号： H01L23/29

CPC分类号： H01L23/49816 , H01L23/3114 , H01L23/3171 , H01L23/3735 , H01L23/544 , H01L2223/54406 , H01L2223/5448 , H01L2224/16 , H01L2924/01004

摘要： Disclosed are a semiconductor device wherein warping of a semiconductor chip due to a sudden temperature change can be prevented without increasing the thickness, and a semiconductor device assembly. The semiconductor device comprises a semiconductor chip, a front side resin layer formed on the front surface of the semiconductor chip by using a first resin material, and a back side resin layer formed on the back surface of the semiconductor chip by using a second resin material having a higher thermal expansion coefficient than the first resin material. The back side resin layer is formed thinner than the front side resin layer.

摘要翻译： 公开了一种半导体器件，其中可以在不增加厚度的情况下防止由于突然的温度变化引起的半导体芯片翘曲和半导体器件组件。半导体器件包括半导体芯片，通过使用第一树脂材料形成在半导体芯片的前表面上的前侧树脂层和通过使用第二树脂材料形成在半导体芯片的背面上的背面树脂层具有比第一树脂材料更高的热膨胀系数。后侧树脂层比前侧树脂层薄。