公开(公告)号：US20100101949A1

公开(公告)日：2010-04-29

申请号：US12605172

申请日：2009-10-23

申请人： Roland TRASSL ,  Michael SCHAEFER ,  Jian LIU

发明人： Roland TRASSL ,  Michael SCHAEFER ,  Jian LIU

IPC分类号： C23C14/34 ,  B23P11/00

CPC分类号： C23C14/3407 ,  H01J37/3405 ,  H01J37/3423 ,  H01J37/3435 ,  Y10T29/49826

摘要： A rotatable target device for sputtering installations, the rotatable target device including: a rotatable target base adapted for holding a solid target cylinder, the solid target cylinder having an inner axial face, an outer axial face and at least one front face connecting the inner axial face with the outer axial face; wherein the rotatable target base comprises a flexible element, a first face adapted to the shape of the inner axial face of the solid target cylinder and a second face adapted to hold the flexible element outside of the solid target cylinder.

摘要翻译： 一种用于溅射装置的可转动目标装置，所述可转动目标装置包括：适于保持固体目标圆柱体的可转动目标基座，所述实心目标圆柱体具有内轴向面，外轴向面和至少一个连接内轴向 面与外轴面; 其中所述可旋转靶基座包括柔性元件，适于所述固体目标圆柱体的内轴向面的形状的第一面和适于将所述柔性元件保持在所述固体目标圆柱体外部的第二面。

公开(公告)号：US20100101946A1

公开(公告)日：2010-04-29

申请号：US12258227

申请日：2008-10-24

申请人： Michael SCHAEFER ,  Roland TRASSL ,  Jian LIU

发明人： Michael SCHAEFER ,  Roland TRASSL ,  Jian LIU

IPC分类号： C23C14/34 ,  B23P11/00

CPC分类号： H01J37/342 ,  C23C14/3407 ,  H01J37/3435 ,  H01J37/3491 ,  Y10T29/49826

摘要： A rotatable target base device for sputtering installations is provided, wherein the target base device is adapted for receiving thereon a solid target cylinder, the rotatable target base device comprising a target base cylinder having a lateral surface, a middle part, a first end region and a second end region opposite to the first end region, wherein at least one of the first and the second end regions has a maximum outer diameter substantially equal to or less than an outer diameter of the middle part.

摘要翻译： 提供了一种用于溅射装置的可旋转目标基座装置，其中，目标基座装置适于在其上容纳固体目标气缸，该可旋转目标基座装置包括具有侧面，目标基座圆筒，中间部分，第一端部区域和 与第一端区域相对的第二端区域，其中第一端区域和第二端区域中的至少一个具有基本上等于或小于中间部分的外径的最大外径。

公开(公告)号：US20110092079A1

公开(公告)日：2011-04-21

申请号：US12604197

申请日：2009-10-22

申请人： Nicolas AURIAC ,  Roland TRASSL

发明人： Nicolas AURIAC ,  Roland TRASSL

IPC分类号： H01L21/02 ,  H01L21/00 ,  C23C16/00 ,  C23C16/513 ,  C23C14/34

CPC分类号： H01L21/6715 ,  H01L21/67005 ,  H01L21/6776 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： A method of producing an anti-reflection and/or passivation coating for semiconductor devices is provided. The method includes: providing a semiconductor device precursor 30 having a surface to be provided with the anti-reflection and/or passivation coating; treating the surface with ions; and depositing a hydrogen containing anti-reflection and/or passivation coating onto the treated surface.

摘要翻译： 提供一种制造用于半导体器件的抗反射和/或钝化涂层的方法。 该方法包括：提供具有要被设置有抗反射和/或钝化涂层的表面的半导体器件前体30; 用离子处理表面; 以及在所处理的表面上沉积含氢的抗反射和/或钝化涂层。

公开(公告)号：US20110048515A1

公开(公告)日：2011-03-03

申请号：US12555131

申请日：2009-09-08

申请人： Manfred ENGLERT ,  Sven SCHRAMM ,  Roland TRASSL

发明人： Manfred ENGLERT ,  Sven SCHRAMM ,  Roland TRASSL

IPC分类号： H01L31/0216 ,  C23C14/34

CPC分类号： H01L31/1868 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell module layer stack is described. The layer stack includes a doped silicon wafer substrate, a back contact layer for the solar cell module, and a first sputtered and annealed passivation layer between the wafer substrate and the back contact layer, wherein the passivation layer is selected from the group consisting of: an aluminum containing oxide layer, an aluminum containing nitride layer, an aluminum containing oxynitride layer, and mixtures thereof.

摘要翻译： 描述了太阳能电池模块层堆叠。 层堆叠包括掺杂硅晶片衬底，用于太阳能电池模块的背接触层，以及在晶片衬底和背接触层之间的第一溅射和退火钝化层，其中钝化层选自： 含铝氧化物层，含铝氮化物层，含铝氮氧化物层及其混合物。

公开(公告)号：US20110146770A1

公开(公告)日：2011-06-23

申请号：US12649084

申请日：2009-12-29

申请人： Torsten Bruno DIETER ,  Roland TRASSL ,  Carsten GOERGENS

发明人： Torsten Bruno DIETER ,  Roland TRASSL ,  Carsten GOERGENS

IPC分类号： H01L31/00 ,  C23C14/48

CPC分类号： H01L31/02167 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： A solar cell module layer stack is described. The layer stack includes a doped silicon wafer substrate, a further layer of the substrate or deposited on the substrate, wherein the further layer is doped for generation of a p-n-junction with the doped silicon wafer substrate; and a first sputtered passivation layer deposited on the doped silicon wafer substrate or the further layer, wherein the passivation layer is selected from the group consisting of: an aluminum-containing oxide layer, an aluminum-containing oxynitride layer, and mixtures thereof; and wherein the passivation layer being plasma treated under a hydrogen-containing atmosphere and/or wherein the layer stack further comprises a hydrogen-containing cap layer on the passivation layer.

摘要翻译： 描述了太阳能电池模块层堆叠。 层叠包括掺杂硅晶片衬底，衬底的另一层或沉积在衬底上，其中掺杂另外的层以与掺杂的硅晶片衬底产生p-n结; 以及沉积在所述掺杂硅晶片衬底或另一层上的第一溅射钝化层，其中所述钝化层选自：含铝氧化物层，含铝氮氧化物层及其混合物; 并且其中所述钝化层在含氢气氛下进行等离子体处理和/或其中所述层堆叠还包括在所述钝化层上的含氢盖层。

公开(公告)号：US20090218213A1

公开(公告)日：2009-09-03

申请号：US12388342

申请日：2009-02-18

申请人： Roland TRASSL ,  Wolf FRITSCHE

发明人： Roland TRASSL ,  Wolf FRITSCHE

IPC分类号： C23C14/34 ,  B05D1/12

CPC分类号： C23C14/3414 ,  C23C4/04 ,  C23C4/067 ,  Y02E10/548

摘要： A sputter target for sputtering a silicon-containing film is provided. The target includes a silicon-containing sputter material layer, and a carrier for carrying the sputter material layer, wherein the sputter material layer contains less than 200 ppm iron.

摘要翻译： 提供溅射含硅膜的溅射靶。 靶包括含硅溅射材料层和用于承载溅射材料层的载体，其中溅射材料层含有少于200ppm的铁。

公开(公告)号：US20080138502A1

公开(公告)日：2008-06-12

申请号：US11945693

申请日：2007-11-27

申请人： Roland TRASSL ,  Andreas Sauer ,  Stephan Wieder

发明人： Roland TRASSL ,  Andreas Sauer ,  Stephan Wieder

IPC分类号： C23C14/34 ,  B32B1/02

CPC分类号： H01L31/18 ,  H01L31/02168 ,  Y02E10/50 ,  Y10T428/13

摘要： The invention relates to a method for the production of an SiN:H layer on a substrate which converts light into electric voltage, wherein a silicon-containing target is sputtered and at least one reactive gas in introduced into the volume between target and substrate. The silicon-containing target is implemented in the form of a tube and is comprised of an Si-based alloy with an Al content of 2 to 50 wt. %.

摘要翻译： 本发明涉及一种在衬底上制造SiN：H层的方法，该方法将光转换成电压，其中溅射含硅靶和至少一种反应性气体引入目标和衬底之间的体积。 含硅靶以管的形式实施，并且由Al含量为2〜50wt。％的Si基合金构成。 ％。

公开(公告)号：US20190246504A1

公开(公告)日：2019-08-08

申请号：US16318812

申请日：2016-08-01

申请人： Roland TRASSL ,  Applied Materials, Inc.

发明人： Roland TRASSL

IPC分类号： H05K3/14 ,  H05K1/11 ,  C23C14/00 ,  C23C14/02 ,  C23C14/56

CPC分类号： H05K3/146 ,  C23C14/0021 ,  C23C14/027 ,  C23C14/562 ,  H05K1/118

摘要： An evaporation apparatus (100) for depositing material on a flexible substrate (160) supported by a processing drum (170) is provided. The evaporation apparatus includes: a first set (110) of evaporation crucibles aligned in a first line (120) along a first direction for generating a cloud (151) of evaporated material to be deposited on the flexible substrate (160); and a gas supply pipe (130) extending in the first direction and being arranged between an evaporation crucible of the first set (110) of evaporation crucibles and the processing drum (170), wherein the gas supply pipe (130) includes a plurality of outlets (133) for providing a gas supply directed into the cloud of evaporated material, and wherein a position of the plurality of outlets is adjustable for changing a position of the gas supply directed into the cloud of evaporated material.