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18 条记录 (耗时 0.021 秒)

    High voltage-resistant lateral double-diffused transistor based on nanowire device
    1.
    发明授权
    High voltage-resistant lateral double-diffused transistor based on nanowire device 有权
    基于纳米线器件的高耐压横向双扩散晶体管

    公开(公告)号：US08564031B2

    公开(公告)日：2013-10-22

    申请号：US13381633

    申请日：2011-04-01

    申请人： Ru Huang ,  Jibin Zou ,  Runsheng Wang ,  Gengyu Yang ,  Yujie Ai ,  Jiewen Fan

    发明人： Ru Huang ,  Jibin Zou ,  Runsheng Wang ,  Gengyu Yang ,  Yujie Ai ,  Jiewen Fan

    IPC分类号： H01L29/76

    CPC分类号： H01L29/0673 ,  B82Y10/00 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/16 ,  H01L29/66439 ,  H01L29/775

    摘要： The invention provides a high voltage-resistant lateral double-diffused transistor. The lateral double-diffused MOS transistor includes a channel region, a gate dielectric, a gate region, a source region, a drain region, a source end extension region and a drain end S-shaped drifting region, wherein the channel region has a lateral cylindrical silicon nanowire structure, on which a layer of gate dielectric is uniformly covered, the gate region is on the gate dielectric, the gate region and the gate dielectric completely surround the channel region, the source end extension region lies between the source region and the channel region, the drain end S-shaped drifting region lies between the drain region and the channel region, the plan view of the drain end S-shaped drifting region is in the form of single or multiple S-shaped structure(s), and an insulating material with a relative dielectric constant of 1-4 is filled within the S-shaped structure(s).

    摘要翻译： 本发明提供了一种耐高压横向双扩散晶体管。 横向双扩散MOS晶体管包括沟道区，栅极电介质，栅极区，源极区，漏极区，源极延伸区和漏极端S形漂移区，其中沟道区具有侧向 圆柱形硅纳米线结构，其上均匀地覆盖一层栅极电介质，栅极区在栅极电介质上，栅极区和栅极电介质完全围绕沟道区，源极延伸区位于源区和 漏极端S形漂移区域位于漏极区域和沟道区域之间，排水端S形漂移区域的平面图为单个或多个S形结构的形式，并且 相对介电常数为1-4的绝缘材料填充在S形结构内。

    Fabrication method of vertical silicon nanowire field effect transistor
    2.
    发明授权
    Fabrication method of vertical silicon nanowire field effect transistor 有权
    垂直硅纳米线场效应晶体管的制造方法

    公开(公告)号：US08592276B2

    公开(公告)日：2013-11-26

    申请号：US13501711

    申请日：2011-11-18

    申请人： Ru Huang ,  Jiewen Fan ,  Yujie Ai ,  Shuai Sun ,  Runsheng Wang ,  Jibin Zou ,  Xin Huang

    发明人： Ru Huang ,  Jiewen Fan ,  Yujie Ai ,  Shuai Sun ,  Runsheng Wang ,  Jibin Zou ,  Xin Huang

    IPC分类号： H01L21/336

    CPC分类号： H01L29/0676 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66439 ,  H01L29/775

    摘要： The present invention discloses a fabrication method of a vertical silicon nanowire field effect transistor having a low parasitic resistance, which relates to a field of an ultra-large-integrated-circuit fabrication technology. As compared with a conventional planar field effect transistor, on one hand the vertical silicon nanowire field effect transistor fabricated by the present invention can provide a good ability for suppressing a short channel effect due to the excellent gate control ability caused by the one-dimensional structure, and reduce a leakage current and a drain-induced barrier lowering (DIBL). On the other hand, an area of the transistor is further reduced and an integration degree of an IC system is increased.

    摘要翻译： 本发明公开了一种具有低寄生电阻的垂直硅纳米线场效应晶体管的制造方法，其涉及超大集成电路制造技术的领域。 与传统的平面场效应晶体管相比，一方面，本发明制造的垂直硅纳米线场效应晶体管可以提供良好的抑制由于一维结构引起的栅极控制能力的短通道效应的能力 ，并减少泄漏电流和漏极引起的屏障降低（DIBL）。 另一方面，晶体管的面积进一步减小，并且IC系统的集成度增加。

    FABRICATION METHOD OF VERTICAL SILICON NANOWIRE FIELD EFFECT TRANSISTOR
    3.
    发明申请
    FABRICATION METHOD OF VERTICAL SILICON NANOWIRE FIELD EFFECT TRANSISTOR 有权
    垂直硅纳米管场效应晶体管的制造方法

    公开(公告)号：US20130011980A1

    公开(公告)日：2013-01-10

    申请号：US13501711

    申请日：2011-11-18

    申请人： Ru Huang ,  Jiewen Fan ,  Yujie Ai ,  Shuai Sun ,  Runsheng Wang ,  Jibin Zou ,  Xin Huang

    发明人： Ru Huang ,  Jiewen Fan ,  Yujie Ai ,  Shuai Sun ,  Runsheng Wang ,  Jibin Zou ,  Xin Huang

    IPC分类号： H01L21/336 ,  B82Y40/00

    CPC分类号： H01L29/0676 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66439 ,  H01L29/775

    摘要： The present invention discloses a fabrication method of a vertical silicon nanowire field effect transistor having a low parasitic resistance, which relates to a field of an ultra-large-integrated-circuit fabrication technology. As compared with a conventional planar field effect transistor, on one hand the vertical silicon nanowire field effect transistor fabricated by the present invention can provide a good ability for suppressing a short channel effect due to the excellent gate control ability caused by the one-dimensional structure, and reduce a leakage current and a drain-induced barrier lowering (DIBL). On the other hand, an area of the transistor is further reduced and an integration degree of an IC system is increased.

    摘要翻译： 本发明公开了一种具有低寄生电阻的垂直硅纳米线场效应晶体管的制造方法，其涉及超大集成电路制造技术的领域。 与传统的平面场效应晶体管相比，一方面，本发明制造的垂直硅纳米线场效应晶体管可以提供良好的抑制由于一维结构引起的栅极控制能力的短通道效应的能力 ，并减少泄漏电流和漏极引起的屏障降低（DIBL）。 另一方面，晶体管的面积进一步减小，并且IC系统的集成度增加。

    Method for Fabricating Silicon Nanowire Field Effect Transistor Based on Wet Etching
    4.
    发明申请
    Method for Fabricating Silicon Nanowire Field Effect Transistor Based on Wet Etching 有权
    基于湿蚀刻的硅纳米线场效应晶体管的制造方法

    公开(公告)号：US20120302027A1

    公开(公告)日：2012-11-29

    申请号：US13511123

    申请日：2011-11-18

    申请人： Ru Huang ,  Jiewen Fan ,  Yujie Ai ,  Shuai Sun ,  Runsheng Wang ,  Jibin Zou ,  Xin Huang

    发明人： Ru Huang ,  Jiewen Fan ,  Yujie Ai ,  Shuai Sun ,  Runsheng Wang ,  Jibin Zou ,  Xin Huang

    IPC分类号： H01L21/336 ,  B82Y40/00

    CPC分类号： H01L29/66772 ,  H01L29/42392 ,  H01L29/78696

    摘要： Disclosed herein is a method for fabricating a silicon nanowire field effect transistor based on a wet etching. The method includes defining an active region; depositing a silicon oxide film as a hard mask, forming a pattern of a source and a drain and a fine bar connecting the source and the drain; transferring the pattern on the hard mask to a silicon substrate by performing etching process for the silicon substrate; performing ion implanting; etching the silicon substrate by wet etching, so that the silicon fine bar connecting the source and the drain is suspended; reducing the silicon fine bar to a nano size to form a silicon nanowire; depositing a polysilicon film; forming a polysilicon gate line acrossing the silicon nanowire by electron beam lithography and forming a structure of nanowire-all-around; forming a silicon oxide sidewall at both sides of the polysilicon gate line, by depositing a silicon oxide film and subsequently etching the silicon oxide film; forming the source and the drain by using ion implantation and high temperature annealing, so that the silicon nanowire field effect transistor is finally fabricated. The method is compatible with a conventional integrated circuit fabrication technology. The fabrication process is simple and convenient, and has a short cycle.

    摘要翻译： 本文公开了一种基于湿蚀刻制造硅纳米线场效应晶体管的方法。 该方法包括定义活动区域; 沉积氧化硅膜作为硬掩模，形成源极和漏极的图案以及连接源极和漏极的细棒; 通过对硅衬底进行蚀刻处理，将硬掩模上的图案转移到硅衬底; 进行离子注入; 通过湿蚀刻蚀刻硅衬底，使得连接源极和漏极的硅细棒悬空; 将硅细棒还原成纳米尺寸以形成硅纳米线; 沉积多晶硅膜; 通过电子束光刻形成跨越硅纳米线的多晶硅栅极线，并形成全纳米线的结构; 在多晶硅栅极线的两侧形成硅氧化物侧壁，通过沉积氧化硅膜并随后蚀刻氧化硅膜; 通过离子注入和高温退火形成源极和漏极，从而最终制造出硅纳米线场效应晶体管。 该方法与传统的集成电路制造技术相兼容。 制造工艺简单方便，循环周期短。

    Method for fabricating silicon nanowire field effect transistor based on wet etching
    5.
    发明授权
    Method for fabricating silicon nanowire field effect transistor based on wet etching 有权
    基于湿蚀刻制造硅纳米线场效应晶体管的方法

    公开(公告)号：US09034702B2

    公开(公告)日：2015-05-19

    申请号：US13511123

    申请日：2011-11-18

    申请人： Ru Huang ,  Jiewen Fan ,  Yujie Ai ,  Shuai Sun ,  Runsheng Wang ,  Jibin Zou ,  Xin Huang

    发明人： Ru Huang ,  Jiewen Fan ,  Yujie Ai ,  Shuai Sun ,  Runsheng Wang ,  Jibin Zou ,  Xin Huang

    IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786

    CPC分类号： H01L29/66772 ,  H01L29/42392 ,  H01L29/78696

    摘要： Disclosed herein is a method for fabricating a silicon nanowire field effect transistor based on a wet etching. The method includes defining an active region; depositing a silicon oxide film as a hard mask, forming a pattern of a source and a drain and a fine bar connecting the source and the drain; transferring the pattern on the hard mask to a silicon substrate by performing etching process for the silicon substrate; performing ion implanting; etching the silicon substrate by wet etching, so that the silicon fine bar connecting the source and the drain is suspended; reducing the silicon fine bar to a nano size to form a silicon nanowire; depositing a polysilicon film; forming a polysilicon gate line acrossing the silicon nanowire by electron beam lithography and forming a structure of nanowire-all-around; forming a silicon oxide sidewall at both sides of the polysilicon gate line, by depositing a silicon oxide film and subsequently etching the silicon oxide film; forming the source and the drain by using ion implantation and high temperature annealing, so that the silicon nanowire field effect transistor is finally fabricated. The method is compatible with a conventional integrated circuit fabrication technology. The fabrication process is simple and convenient, and has a short cycle.

    摘要翻译： 本文公开了一种基于湿蚀刻制造硅纳米线场效应晶体管的方法。 该方法包括定义活动区域; 沉积氧化硅膜作为硬掩模，形成源极和漏极的图案以及连接源极和漏极的细棒; 通过对硅衬底进行蚀刻处理，将硬掩模上的图案转移到硅衬底; 进行离子注入; 通过湿蚀刻蚀刻硅衬底，使得连接源极和漏极的硅细棒悬空; 将硅细棒还原成纳米尺寸以形成硅纳米线; 沉积多晶硅膜; 通过电子束光刻形成跨越硅纳米线的多晶硅栅极线，并形成全纳米线的结构; 在多晶硅栅极线的两侧形成硅氧化物侧壁，通过沉积氧化硅膜并随后蚀刻氧化硅膜; 通过离子注入和高温退火形成源极和漏极，从而最终制造出硅纳米线场效应晶体管。 该方法与传统的集成电路制造技术相兼容。 制造工艺简单方便，循环周期短。

    Fabrication method for surrounding gate silicon nanowire transistor with air as spacers
    7.
    发明授权
    Fabrication method for surrounding gate silicon nanowire transistor with air as spacers 有权
    围绕栅极硅纳米线晶体管的制造方法，其中空气为间隔物

    公开(公告)号：US08513067B2

    公开(公告)日：2013-08-20

    申请号：US13266791

    申请日：2011-07-15

    申请人： Ru Huang ,  Jing Zhuge ,  Jiewen Fan ,  Yujie Ai ,  Runsheng Wang ,  Xin Huang

    发明人： Ru Huang ,  Jing Zhuge ,  Jiewen Fan ,  Yujie Ai ,  Runsheng Wang ,  Xin Huang

    IPC分类号： H01L21/84

    CPC分类号： H01L29/66439 ,  B82Y10/00 ,  H01L29/775

    摘要： The invention discloses a fabrication method for a surrounding gate silicon nanowire transistor with air as spacers. The method comprises: performing isolation, and depositing a material A which has a higher etch selectivity ratio with respect to Si; performing photolithography to define a Fin hard mask; etching the material A to form the Fin hard mask; performing source and drain implantation; performing photolithography to define a channel region and large source/drain regions; forming the Si Fin and the large source/drains; removing the hard mask of the material A; forming a nanowire; etching the SiO2 to form a floating nanowire; forming a gate oxide layer; depositing a polysilicon; performing polysilicon injection; performing annealing to activate dopants; etching the polysilicon; depositing SiN; performing photolithography to define a gate pattern; etching the SiN and the polysilicon to form the gate pattern; separating the gate and the source/drain with a space in between filled with air; depositing SiO2 to form air sidewalls; performing annealing to densify the SiO2 layer; using subsequent processes to complete the device fabrication. The invention is compatible with the CMOS process flow. The introduction of the air sidewalls can effectively reduce the parasitic capacitance of the device, and improve the transient response of the device, so that the method is applicable for a logic circuit with high performance.

    摘要翻译： 本发明公开了一种具有空气作为间隔物的周围栅极硅纳米线晶体管的制造方法。 该方法包括：执行隔离和沉积相对于Si具有较高蚀刻选择比的材料A; 执行光刻以限定Fin硬掩模; 蚀刻材料A以形成Fin硬掩模; 进行源极和漏极植入; 执行光刻以限定沟道区和大的源极/漏极区; 形成Si Fin和大源/排水; 去除材料A的硬掩模; 形成纳米线; 蚀刻SiO 2以形成浮动的纳米线; 形成栅氧化层; 沉积多晶硅; 执行多晶硅注入; 执行退火以激活掺杂剂; 蚀刻多晶硅; 沉积SiN; 执行光刻以限定栅极图案; 蚀刻SiN和多晶硅以形成栅极图案; 分离门和源/排水管之间的空间填充空气之间; 沉积SiO 2以形成空气侧壁; 进行退火以使SiO 2层致密化; 使用后续过程来完成器件制造。 本发明与CMOS工艺流程兼容。 空气侧壁的引入可以有效降低器件的寄生电容，提高器件的瞬态响应，使其适用于具有高性能的逻辑电路。