公开(公告)号：US20110279903A1

公开(公告)日：2011-11-17

申请号：US13109832

申请日：2011-05-17

申请人： Rudolf A. Wiedemann ,  Kevin L. Lear ,  John R. Joseph

发明人： Rudolf A. Wiedemann ,  Kevin L. Lear ,  John R. Joseph

IPC分类号： G02B27/10

CPC分类号： G02B27/143

摘要： One or more combiner elements are disclosed for optically combining multiple laser beam bundles, either extra-cavity or intra-cavity to the laser generating array chips, to form higher density bundles of parallel laser beams. The combiner elements can be shared between two or more array chips and include a form of a pellicle combiner, a polarizing beam splitter cube combiner, or some combination of the two devices.

摘要翻译： 公开了一种或多种组合器元件，用于光学地组合激光产生阵列芯片的多腔或腔内的多个激光束，以形成更高密度的平行激光束束。 组合器元件可以在两个或更多个阵列芯片之间共享，并且包括防护薄膜组合器，偏振分束器立方组合器或两个器件的某些组合的形式。

公开(公告)号：US06645848B2

公开(公告)日：2003-11-11

申请号：US09872747

申请日：2001-06-01

申请人： John R. Joseph ,  Wenlin Luo ,  Kevin L. Lear ,  Robert P. Bryan

发明人： John R. Joseph ,  Wenlin Luo ,  Kevin L. Lear ,  Robert P. Bryan

IPC分类号： H01L214763

CPC分类号： H01L24/05 ,  H01L21/31051 ,  H01L23/53295 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01S5/0425 ,  H01S5/18311 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2224/45099 ,  H01L2924/00

摘要： This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad.

公开(公告)号：US20130223846A1

公开(公告)日：2013-08-29

申请号：US13594714

申请日：2012-08-24

申请人： John R. Joseph ,  Kevin L. Lear ,  David Abell

发明人： John R. Joseph ,  Kevin L. Lear ,  David Abell

IPC分类号： H04B10/11 ,  G02B27/10 ,  G02B5/02

CPC分类号： H04B10/11 ,  G02B5/02 ,  G02B5/32 ,  G02B27/0905 ,  G02B27/0944 ,  G02B27/10 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/06226 ,  H01S5/423 ,  H01S5/50 ,  H04B10/503

摘要： High power, high speed VCSEL arrays are employed in unique configurations of arrays and sub-arrays. Placement of a VCSEL array behind a lens allows spatial separation and directivity. Diffusion may be employed to increase alignment tolerance. Intensity modulation may be performed by operating groups of VCSEL emitters at maximum bias. Optical communications networks with high bandwidth may employ angular, spatial, and/or wavelength multiplexing. A variety of network topologies and bandwidths suitable for the data center may be implemented. Eye safe networks may employ VCSEL emitters may be paired with optical elements to reduce optical power density to eye safe levels.

摘要翻译： 大功率，高速VCSEL阵列用于阵列和子阵列的独特配置。 透镜后面的VCSEL阵列的放置允许空间分离和方向性。 可以采用扩散来增加对准公差。 强度调制可以通过VCSEL发射器的最大偏置的操作组来执行。 具有高带宽的光通信网络可以采用角度，空间和/或波长复用。 可以实现适合于数据中心的各种网络拓扑和带宽。 眼睛安全网络可以使用VCSEL发射器可以与光学元件配对以将光功率密度降低到眼睛安全水平。

公开(公告)号：US5726462A

公开(公告)日：1998-03-10

申请号：US597730

申请日：1996-02-07

申请人： Olga B. Spahn ,  Kevin L. Lear

发明人： Olga B. Spahn ,  Kevin L. Lear

IPC分类号： H01L21/76 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/30 ,  H01S5/22 ,  H01S5/223 ,  H01L31/0256

CPC分类号： H01L33/30 ,  H01L21/7605 ,  H01L31/0304 ,  H01S5/2231 ,  H01S5/2214 ,  Y02E10/544

摘要： A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

摘要翻译： 半导体结构。 半导体结构包括形成在包括至少一层包含铝（Al）和锑（Sb））的III-V族化合物半导体合金的基板上的多个半导体层，其中至少一部分AlSb合金层是化学上 通过氧化工艺转化成叠加的电绝缘和导电部分。 由AlSb合金层形成的电绝缘部分包括铝的氧化物（例如Al 2 O 3），而导电部分包含Sb。 横向氧化工艺允许在单晶半导体层之下形成叠置的绝缘和导电部分，用于形成许多不同类型的半导体结构，其具有对于诸如发光二极管，边缘发射激光器，垂直腔表面发射激光器 ，光电探测器和光调制器（波导和表面法线），以及用于诸如异质结双极晶体管，场效应晶体管和量子效应器件的电子器件。 预期本发明特别可用于形成在1.3-1.6μm波长范围内使用的发光器件，其中AlSb合金层用于限定器件的有源区，并且有效地将其中的电流传送到其中 高效的光产生。

公开(公告)号：US5633527A

公开(公告)日：1997-05-27

申请号：US384089

申请日：1995-02-06

申请人： Kevin L. Lear

发明人： Kevin L. Lear

IPC分类号： G02B6/12 ,  H01L31/0232 ,  H01L33/02 ,  H01L33/10 ,  H01S3/00 ,  H01S5/00 ,  H01S5/026 ,  H01S5/183 ,  H01S5/22 ,  H01L29/205 ,  G02B6/42 ,  H01L27/142 ,  H01S3/19

CPC分类号： H01L33/02 ,  G02B6/12004 ,  H01L31/0232 ,  H01L33/105 ,  H01S5/0267 ,  H01S5/18388 ,  G02B2006/12102 ,  G02B2006/12121 ,  H01S5/18311 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18372 ,  H01S5/2205

摘要： A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

摘要翻译： 单体透镜半导体器件及方法。 单晶透镜半导体器件设置有至少一个半导体层，其具有在生长方向上变化的组成，以在半导体层中一体形成一个或多个透镜。 单透镜半导体器件可以形成为诸如微透镜的光处理器件，并且作为诸如发光二极管，光电检测器，谐振腔发光二极管，垂直腔表面发射激光器和谐振腔的光有源器件 光电探测器

公开(公告)号：US08830068B2

公开(公告)日：2014-09-09

申请号：US13233887

申请日：2011-09-15

申请人： Vicki L. Campbell ,  Kevin L. Lear ,  Benjamin J. Vacha ,  Jarrod Zacher ,  Olivera K. Notaros

发明人： Vicki L. Campbell ,  Kevin L. Lear ,  Benjamin J. Vacha ,  Jarrod Zacher ,  Olivera K. Notaros

IPC分类号： G08B23/00 ,  A61B5/11 ,  A61B5/00 ,  A61B5/01 ,  G08B21/02

CPC分类号： A61B5/01 ,  A61B5/0008 ,  A61B5/1118 ,  A61B5/7275 ,  A61B2503/40 ,  A61B2560/0242 ,  G06F19/00 ,  G08B21/0211 ,  G08B21/0288

摘要： A system and method for monitoring the condition of a human, companion animal, or livestock animal in an extreme environment is disclosed. In particular, a system and method to process at least one environmental measurement and at least one physiological measurement to assess at least one condition of a human, companion animal, or livestock animal in an extreme environment is disclosed.

摘要翻译： 公开了一种用于在极端环境中监测人，伴侣动物或家畜的状况的系统和方法。 特别地，公开了一种用于处理至少一种环境测量和至少一种生理学测量以评估极端环境中的人，伴侣动物或家畜的至少一种状况的系统和方法。

公开(公告)号：US5397739A

公开(公告)日：1995-03-14

申请号：US99035

申请日：1993-07-26

申请人： Scott A. Chalmers ,  Kevin P. Killeen ,  Kevin L. Lear

发明人： Scott A. Chalmers ,  Kevin P. Killeen ,  Kevin L. Lear

IPC分类号： H01L21/66 ,  H01S5/183 ,  H01L21/20

CPC分类号： B24B37/013 ,  H01L22/26 ,  H01S5/18361 ,  H01S5/0042 ,  H01S5/18358

摘要： We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.

摘要翻译： 我们报告了垂直腔表面发射激光器（VCSEL）的准确生长的方法。 该方法使用单反射光谱测量来确定在临界生长点处部分完成的VCSEL的结构。 这些信息以及提取的生长速率允许生长参数的不精确性在剩余结构的生长期间被补偿，然后可以用非常精确的临界尺寸来完成。 使用这种方法，我们现在可以常规地生长激光VCSEL，法布里 - 珀罗腔谐振波长控制在0.5％以内。

公开(公告)号：US5379719A

公开(公告)日：1995-01-10

申请号：US97500

申请日：1993-07-26

申请人： Scott A. Chalmers ,  Kevin P. Killeen ,  Kevin L. Lear

发明人： Scott A. Chalmers ,  Kevin P. Killeen ,  Kevin L. Lear

IPC分类号： C30B23/02 ,  C30B25/02

CPC分类号： C30B29/40 ,  C30B23/002

摘要： A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

摘要翻译： 描述了一种用于可重复地控制MBE沉积工艺中的层厚度和变化层组成的方法。 特别地，本发明包括在多个生长周期上在衬底上外延沉积多层材料，其中每个生长周期和从一个生长周期到下一个生长周期的瞬时生长速率的平均值作为函数保持基本上恒定 的时间。

公开(公告)号：US08455844B2

公开(公告)日：2013-06-04

申请号：US12722446

申请日：2010-03-11

申请人： Kevin L. Lear ,  Sean B. Pieper

发明人： Kevin L. Lear ,  Sean B. Pieper

IPC分类号： G01N21/64

CPC分类号： G01N21/7703 ,  G01J3/4406 ,  G01N21/6408 ,  G01N21/80 ,  G01N2021/6419 ,  G01N2021/6421 ,  G01N2021/6484 ,  G01N2021/7786 ,  G01N2201/0826 ,  G01N2201/0833

摘要： A measurement system for use with fluorescent chemosensors has multiple stimulus light sources each coupled to at least one sensor. Multiple sensors each receiving light from a different light source connect to each of one or more photodetectors. A processing device drives the light sources in a time-division multiplexed manner, and reads the photodetector at an appropriate time for each sensor. The processing device calibrates the sensor readings and provides them in a way that is identified to the associated sensor.

摘要翻译： 用于荧光化学传感器的测量系统具有多个激励光源，每个激光光源耦合到至少一个传感器。 各自接收来自不同光源的光的多个传感器连接到一个或多个光电检测器中的每一个。 处理装置以时分复用的方式驱动光源，并且在每个传感器的适当时间读取光电检测器。 处理装置校准传感器读数并以对相关传感器识别的方式提供它们。

公开(公告)号：US08349605B1

公开(公告)日：2013-01-08

申请号：US11403546

申请日：2006-04-12

申请人： Kevin L. Lear ,  David S. Dandy ,  Matthew D. Stephens ,  Guangwei Yuan

发明人： Kevin L. Lear ,  David S. Dandy ,  Matthew D. Stephens ,  Guangwei Yuan

IPC分类号： C12M1/34

CPC分类号： G01N21/552 ,  G01N21/41 ,  G01N33/54373 ,  G01N2201/06113 ,  G01N2201/062 ,  G01N2201/08

摘要： A waveguide sensor capable of direct, real-time detection and monitoring of analytes in the vicinity of the waveguide surface without requiring the tagging or labeling of the analyte, is described. Analytic and numerical calculations have predicted that by locally detecting either changes in the evanescent field or changes in the light coupled out of the waveguide as a result of the presence of the analyte, high detection sensitivity will be able to be achieved.