公开(公告)号：US08685846B2

公开(公告)日：2014-04-01

申请号：US12695729

申请日：2010-01-28

申请人： Russell J. Low ,  William T. Weaver ,  Nicholas P. T. Bateman ,  Atul Gupta

发明人： Russell J. Low ,  William T. Weaver ,  Nicholas P. T. Bateman ,  Atul Gupta

IPC分类号： H01L21/425

CPC分类号： H01L21/266 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/31711 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.

摘要翻译： 公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，该技术可以被实现为用于处理衬底的方法。 该方法可以包括离子注入在离子源的下游设置的离子，其离子在离子源中产生; 以及将掩模的第一部分设置在所述基板的前面以将所述掩模的所述第一部分暴露于所述离子，所述掩模由所述第一和第二掩模保持器支撑，所述掩模还包括缠绕在所述第一掩模保持器中的第二部分 。

公开(公告)号：US08455847B2

公开(公告)日：2013-06-04

申请号：US13428682

申请日：2012-03-23

申请人： Benjamin B. Riordon ,  Nicholas P. T. Bateman ,  William T. Weaver ,  Russell J. Low

发明人： Benjamin B. Riordon ,  Nicholas P. T. Bateman ,  William T. Weaver ,  Russell J. Low

IPC分类号： H01J37/317 ,  H01J37/244 ,  H01J3/07

CPC分类号： H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/266 ,  H01L31/0288 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.

摘要翻译： 在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。 离子电流测量装置通过离子束平移。 使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。 以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。

公开(公告)号：US08164068B2

公开(公告)日：2012-04-24

申请号：US12845665

申请日：2010-07-28

申请人： Benjamin B. Riordon ,  Nicholas P. T. Bateman ,  William T. Weaver ,  Russell J. Low

发明人： Benjamin B. Riordon ,  Nicholas P. T. Bateman ,  William T. Weaver ,  Russell J. Low

IPC分类号： H01J37/317 ,  H01J37/244 ,  H01J3/07

CPC分类号： H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/266 ,  H01L31/0288 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.

摘要翻译： 在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。 离子电流测量装置通过离子束平移。 使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。 以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。

公开(公告)号：US08598547B2

公开(公告)日：2013-12-03

申请号：US13170815

申请日：2011-06-28

申请人： Russell J. Low ,  Atul Gupta ,  William T. Weaver

发明人： Russell J. Low ,  Atul Gupta ,  William T. Weaver

IPC分类号： A61N5/00 ,  G21G5/00

CPC分类号： H01J37/20 ,  G21K5/10 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3171 ,  H01J2237/20285 ,  H01J2237/31703 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.

摘要翻译： 可以补偿工件（例如太阳能电池）的离子注入期间的毛刺。 在一种情况下，在第一速度的第一次通过期间植入工件。 该第一次通过导致工件中不均匀剂量的区域。 然后在第二次通过期间以第二速度植入工件。 第二速度与第一速度不同。 第二速度可以对应于整个工件或者对应于工件中不均匀剂量的区域。

公开(公告)号：US20120017938A1

公开(公告)日：2012-01-26

申请号：US13187078

申请日：2011-07-20

申请人： William T. Weaver ,  Kevin M. Daniels ,  Dale K. Stone ,  Russell J. Low ,  Benjamin B. Riordon ,  Jeffrey Blahnik

发明人： William T. Weaver ,  Kevin M. Daniels ,  Dale K. Stone ,  Russell J. Low ,  Benjamin B. Riordon ,  Jeffrey Blahnik

IPC分类号： B08B1/00

CPC分类号： H01L21/67028 ,  B08B1/008 ,  H01J2237/31711 ,  H01L21/67046

摘要： To achieve cost efficiency, solar cells must be processed at a high throughput. Breakages, which may leave debris on the clamping surface of the platen, adversely affect this throughput. A plurality of embodiments are disclosed which may be used to remove debris from the clamping surface without breaking the vacuum condition within the processing station. In some embodiments, a brush is used to sweep the debris from the surface of the platen. In other embodiments, an adhesive material is used to collect the debris. In some embodiments, the automation equipment used to handle masks may also be used to handle the platen cleaning mechanisms. In still other embodiments, stream of gas or ion beams are used to clean debris from the clamping surface of the platen.

摘要翻译： 为了实现成本效益，必须以高产量处理太阳能电池。 碎片可能会使碎片在压板的夹紧表面上产生不利影响。 公开了多个实施例，其可以用于从夹紧表面去除碎屑而不破坏处理站内的真空状况。 在一些实施例中，刷子用于从压板的表面扫掠碎屑。 在其他实施例中，使用粘合剂材料来收集碎屑。 在一些实施例中，用于处理掩模的自动化设备也可用于处理压板清洁机构。 在其它实施例中，气流或离子束用于从压板的夹紧表面清洁碎屑。

公开(公告)号：US20120181443A1

公开(公告)日：2012-07-19

申请号：US13428682

申请日：2012-03-23

申请人： Benjamin B. RIORDON ,  Nicholas P.T. Bateman ,  William T. Weaver ,  Russell J. Low

发明人： Benjamin B. RIORDON ,  Nicholas P.T. Bateman ,  William T. Weaver ,  Russell J. Low

IPC分类号： G01T1/17

CPC分类号： H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/266 ,  H01L31/0288 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.

摘要翻译： 在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。 离子电流测量装置通过离子束平移。 使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。 以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。

公开(公告)号：US20110031408A1

公开(公告)日：2011-02-10

申请号：US12845665

申请日：2010-07-28

申请人： Benjamin B. Riordon ,  Nicholas P.T. Bateman ,  William T. Weaver ,  Russell J. Low

发明人： Benjamin B. Riordon ,  Nicholas P.T. Bateman ,  William T. Weaver ,  Russell J. Low

IPC分类号： H01J3/14

CPC分类号： H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/266 ,  H01L31/0288 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.

摘要翻译： 在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。 离子电流测量装置通过离子束平移。 使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。 以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。

公开(公告)号：US20100197125A1

公开(公告)日：2010-08-05

申请号：US12695729

申请日：2010-01-28

申请人： Russell J. Low ,  William Weaver ,  Nicholas P.T. Bateman ,  Atul Gupta

发明人： Russell J. Low ,  William Weaver ,  Nicholas P.T. Bateman ,  Atul Gupta

IPC分类号： H01L21/266 ,  H01J37/317 ,  B05C11/00

CPC分类号： H01L21/266 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/31711 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.

摘要翻译： 公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，该技术可以被实现为用于处理衬底的方法。 该方法可以包括离子注入在离子源的下游设置的离子，其离子在离子源中产生; 以及将掩模的第一部分设置在所述基板的前面以将所述掩模的所述第一部分暴露于所述离子，所述掩模由所述第一和第二掩模保持器支撑，所述掩模还包括缠绕在所述第一掩模保持器中的第二部分 。

公开(公告)号：US08461030B2

公开(公告)日：2013-06-11

申请号：US12947078

申请日：2010-11-16

申请人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Deepak A. Ramappa ,  Russell J. Low ,  Atul Gupta ,  Kevin M. Daniels

发明人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Deepak A. Ramappa ,  Russell J. Low ,  Atul Gupta ,  Kevin M. Daniels

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： B01J19/081 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0453 ,  H01J2237/1205 ,  H01L21/2236 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/08 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

公开(公告)号：US08461556B2

公开(公告)日：2013-06-11

申请号：US12877666

申请日：2010-09-08

申请人： Daniel Distaso ,  Russell J. Low

发明人： Daniel Distaso ,  Russell J. Low

IPC分类号： G21K5/10

CPC分类号： H01J37/3026 ,  H01J37/3171 ,  H01J2237/31703

摘要： Blockers in an ion beam blocker unit selectively block or trim an ion beam. In one instance, the ion beam has first current regions and second current regions. These current regions may be unequal. The ion beam is then implanted into a workpiece to form regions with different doses. The workpiece may be scanned so that the entirety of its surface is implanted.

摘要翻译： 离子束阻挡单元中的阻挡剂选择性地阻挡或修整离子束。 在一种情况下，离子束具有第一电流区域和第二电流区域。 这些当前区域可能不相等。 然后将离子束植入工件中以形成具有不同剂量的区域。 可以扫描工件以使其整个表面被植入。