公开(公告)号：US07528417B2

公开(公告)日：2009-05-05

申请号：US10544940

申请日：2004-02-09

申请人： Ryouichi Takeuchi ,  Keiichi Matsuzawa ,  Junichi Yamazaki

发明人： Ryouichi Takeuchi ,  Keiichi Matsuzawa ,  Junichi Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L33/30 ,  H01L33/02 ,  H01L33/14

摘要： A double hetero structure light-emitting diode device includes an active layer (6), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer (4), a window layer (9) and an undoped AlInP layer. The positive-electrode-side cladding layer includes an undoped AlInP layer (7) grown to have a thickness of 0.5 μm and an intermediate layer (8) doped to assume p-type conductivity and having an intermediate energy band gap value between that of the undoped AlInP layer and that of the window layer. The window layer on the intermediate layer is a GaP layer grown at 730° C. or higher and at a growth rate of 7.8 μm/hour or more in the presence of Ze serving as a dopant. The negative-electrode-side cladding layer is provided with an undoped AlInP layer (5) having a thickness of 0.1 μm or more. With this configuration, there is provided a light-emitting diode device that enhances the crystallinity of a window layer, prevents generation of faults caused by a high-temperature process and attains high luminance at a wavelength falling within a yellow-green band.

摘要翻译： 双异质结构发光二极管装置包括有源层（6），正电极侧覆层，负电极侧覆层（4），窗口层（9）和未掺杂的AlInP层。 正电极侧包覆层包括生长为厚度为0.5μm的未掺杂的AlInP层（7）和被掺杂为具有p型导电性的中间层（8），并且具有中间能带隙值 未掺杂的AlInP层和窗口层的。 中间层上的窗口层是在作为掺杂剂的Ze的存在下，在730℃以上，生长速度为7.8μm/小时以上的GaP层。 负极侧包层设置有厚度为0.1μm以上的未掺杂的AlInP层（5）。 采用这种结构，提供了一种提高窗口层的结晶度的发光二极管装置，防止由高温处理引起的故障的产生，并且在落在黄绿色带中的波长下获得高亮度。

公开(公告)号：US20060163603A1

公开(公告)日：2006-07-27

申请号：US10544940

申请日：2004-02-09

申请人： Ryouichi Takeuchi ,  Keiichi Matsuzawa ,  Junichi Yamazaki

发明人： Ryouichi Takeuchi ,  Keiichi Matsuzawa ,  Junichi Yamazaki

IPC分类号： H01L33/00

CPC分类号： H01L33/30 ,  H01L33/02 ,  H01L33/14

摘要： A double hetero structure light-emitting diode device includes an active layer (6), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer (4), a window layer (9) and an undoped AlInP layer. The positive-electrode-side cladding layer includes an undoped AlInP layer (7) grown to have a thickness of 0.5 μm and an intermediate layer (8) doped to assume p-type conductivity and having an intermediate energy band gap value between that of the undoped AlInP layer and that of the window layer. The window layer on the intermediate layer is a GaP layer grown at 730° C. or higher and at a growth rate of 7.8 μm/hour or more in the presence of Ze serving as a dopant. The negative-electrode-side cladding layer is provided with an undoped AlInP layer (5) having a thickness of 0.1 μm or more. With this configuration, there is provided a light-emitting diode device that enhances the crystallinity of a window layer, prevents generation of faults caused by a high-temperature process and attains high luminance at a wavelength falling within a yellow-green band.

摘要翻译： 双异质结构发光二极管装置包括有源层（6），正电极侧覆层，负电极侧覆层（4），窗口层（9）和未掺杂的AlInP层。 正电极侧包覆层包括生长为厚度为0.5μm的未掺杂的AlInP层（7）和被掺杂为具有p型导电性的中间层（8），并且具有中间能带隙值 未掺杂的AlInP层和窗口层的。 中间层上的窗口层是在作为掺杂剂的Ze的存在下，在730℃以上，生长速度为7.8μm/小时以上的GaP层。 负极侧包层设置有厚度为0.1μm以上的未掺杂的AlInP层（5）。 采用这种结构，提供了一种提高窗口层的结晶度的发光二极管装置，防止由高温处理引起的故障的产生，并且在落在黄绿色带中的波长下获得高亮度。

公开(公告)号：US08659004B2

公开(公告)日：2014-02-25

申请号：US13496083

申请日：2010-09-15

申请人： Noriyuki Aihara ,  Noriyoshi Seo ,  Noritaka Muraki ,  Ryouichi Takeuchi

发明人： Noriyuki Aihara ,  Noriyoshi Seo ,  Noritaka Muraki ,  Ryouichi Takeuchi

IPC分类号： H01L31/00

CPC分类号： H01L33/06 ,  H01L24/45 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/10158 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1 Ga1-X1) As (0≦X1≦1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2 Ga1-X2) As (0

摘要翻译： 公开了一种发光二极管，其具有红色和红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。 发光二极管设置有：发光部，其包括具有量子阱结构的有源层，并且交替地层叠由包含由（AlX 1 Ga 1-X1）As的组成式表示的组成的阱层 （0 @ X1 @ 1）和阻挡层，其包含由组成式表示的组成式（AlX 2 Ga 1 -X 2）As（0 <2），以及第一覆盖层和第二覆盖层，两者之间 其中所述有源层被夹持，其中所述第一覆盖层和所述第二覆盖层包含由组成式表示的组成式（AlX 3 Ga 1-x）Y1 In1-Y1 P（0≤X3≤1,0

公开(公告)号：US08399277B2

公开(公告)日：2013-03-19

申请号：US12911599

申请日：2010-10-25

申请人： Takashi Watanabe ,  Ryouichi Takeuchi

发明人： Takashi Watanabe ,  Ryouichi Takeuchi

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/30 ,  H01L33/387 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

摘要： A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135) of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020 cm−3 or less.

摘要翻译： 化合物半导体发光二极管包括由铝 - 镓铟磷化物形成的发光层（133），具有由III-V族化合物半导体单独形成的组分层的发光部分（13），透明支撑 层（14），其结合到所述发光部（13）的最外表面层（135）之一并且对从所述发光层（133）发射的光透明;以及接合层（141），形成在所述发光部 支撑层（14）和含有浓度为1×1020cm-3以下的氧原子的发光部（13）的最外表面层（135）之一。

公开(公告)号：US20120199873A1

公开(公告)日：2012-08-09

申请号：US13500479

申请日：2010-09-30

申请人： Atsushi Matsumura ,  Ryouichi Takeuchi

发明人： Atsushi Matsumura ,  Ryouichi Takeuchi

IPC分类号： H01L33/30 ,  H01L33/48

CPC分类号： H01L33/641

摘要： The object of the present invention is to provide a metal substrate for a light-emitting diode having excellent chemical resistance, a light-emitting diode, and a method for manufacturing the light-emitting diode, and the present invention provides a metal substrate for a light-emitting diode including a metal substrate, a compound semiconductor layer having a light-emitting portion, which is joined over the metal substrate via a junction layer, wherein the metal substrate for a light-emitting diode includes a metal plate and a metal protective film which covers at least an upper surface and a lower surface of the metal plate.

摘要翻译： 本发明的目的是提供一种具有优异耐化学性的发光二极管的金属基板，发光二极管及其制造方法，本发明提供一种用于 包括金属基板的发光二极管，具有发光部分的化合物半导体层，其经由接合层接合在金属基板上，其中用于发光二极管的金属基板包括金属板和金属保护 覆盖金属板的至少上表面和下表面的膜。

公开(公告)号：US20120080689A1

公开(公告)日：2012-04-05

申请号：US13321351

申请日：2010-05-13

申请人： Wataru Nabekura ,  Ryouichi Takeuchi

发明人： Wataru Nabekura ,  Ryouichi Takeuchi

IPC分类号： H01L33/30 ,  H01L33/36

CPC分类号： H01L33/44 ,  H01L33/305 ,  H01L33/382 ,  H01L33/40 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting diode having a high output, high efficiency, and a long service life under a high-humidity environment is provided. The light-emitting diode (1) includes a compound semiconductor layer (2) having a light-emitting section (7), ohmic electrodes (4, 5) provided on the main light extraction surface of the compound semiconductor layer (2), and an electrode protection layer (6) for protecting the ohmic electrodes (4, 5), wherein the Al concentrations of the surfaces (2a, 2b) of the compound semiconductor layer (2), which include the main light extraction surface, are 20% or less and the As concentration of the surfaces (2a, 2b) is less than 1%, and the electrode protection layer (6) has a two-layer structure composed of a first protective film (12) provided so as to cover the ohmic electrodes (4, 5) and a second protective film (13) provided so as to cover at least an end portion of the first protective film (12).

摘要翻译： 提供了一种在高湿度环境下具有高输出，高效率和长使用寿命的发光二极管。 发光二极管（1）包括具有发光部（7）的化合物半导体层（2），设置在化合物半导体层（2）的主光提取面上的欧姆电极（4,5），以及 用于保护欧姆电极（4,5）的电极保护层（6），其中包括主光提取表面的化合物半导体层（2）的表面（2a，2b）的Al浓度为20％ 以下，表面（2a，2b）的As浓度小于1％，电极保护层（6）具有由第一保护膜（12）构成的双层结构，该第一保护膜设置成覆盖欧姆 电极（4,5）和设置成覆盖至少第一保护膜（12）的端部的第二保护膜（13）。

公开(公告)号：US20110298002A1

公开(公告)日：2011-12-08

申请号：US13202029

申请日：2010-01-25

申请人： Ryouichi Takeuchi ,  Atsushi Matsumura ,  Kyousuke Masuya

发明人： Ryouichi Takeuchi ,  Atsushi Matsumura ,  Kyousuke Masuya

IPC分类号： H01L33/60

CPC分类号： H01L33/641 ,  H01L33/0079 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： The object of the invention is to provide a light-emitting diode that is excellent in terms of thermal radiation properties and is capable of suppressing cracks in the substrate during joining and emitting light with high luminance by applying a high voltage, a light-emitting diode lamp, and a method of manufacturing a light-emitting diode. The above object is achieved by using a light-emitting diode (1) having a heatsink substrate (5) joined to a light-emitting portion (3) including a light-emitting layer (2), in which the heatsink substrate (5) is formed by alternately laminating a first metal layer (21) and a second metal layer (22); the first metal layer (21) has a thermal conductivity of 130 W/m·K or higher and is made of a material having a thermal expansion coefficient substantially similar to the thermal expansion coefficient of a material for the light-emitting portion (3); and the second metal layer (22) is made of a material having a thermal conductivity of 230 W/m·K or higher.

摘要翻译： 本发明的目的是提供一种在热辐射性方面优异的发光二极管，并且能够通过施加高电压来抑制接合期间的基板的裂纹和高亮度的发光，发光二极管 灯和制造发光二极管的方法。 上述目的是通过使用具有接合到包括发光层（2）的发光部分（3）的散热基板（5）的发光二极管（1），其中散热基板（5） 通过交替层叠第一金属层（21）和第二金属层（22）而形成。 第一金属层（21）的热导率为130W / m·K以上，由与发光部（3）的材料的热膨胀系数基本相同的热膨胀系数的材料构成， ; 第二金属层（22）由导热率为230W / m·K以上的材料构成。

公开(公告)号：US20090278148A1

公开(公告)日：2009-11-12

申请号：US12158914

申请日：2006-12-22

申请人： Wataru Nabekura ,  Ryouichi Takeuchi

发明人： Wataru Nabekura ,  Ryouichi Takeuchi

IPC分类号： H01L33/00 ,  H01L21/28

CPC分类号： H01L33/20 ,  H01L33/38 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

摘要翻译： 透明基板发光二极管（10）具有由化合物半导体构成的发光层（133），其中，在其上形成有第一电极（15）的光取出面的面积（A）和第二电极 与第一电极（15）极性不同的电极（16），形成为近光取出面的发光层（133）的面积（B）和背面的面积（C） 落在与用于形成第一电极（15）和第二电极（16）的相反侧的发光二极管相关，以满足A> C> B的关系。 本发明的发光二极管（10）由于发光层（133）的面积与透明基板的背面（23）的面积的关系以及形状的优化 透明基板（14）的侧面呈现出高亮度和高散热性能，并且与高电流配合使用。

公开(公告)号：US20070215886A1

公开(公告)日：2007-09-20

申请号：US10594065

申请日：2005-03-28

申请人： Ryouichi Takeuchi ,  Wataru Nabekura ,  Takashi Udagawa

发明人： Ryouichi Takeuchi ,  Wataru Nabekura ,  Takashi Udagawa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/30 ,  H01L33/0079 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.

摘要翻译： 提供一种pn结合化合物半导体发光器件，其包括由n型或p型磷化铝镓磷化物构成的发光层和用于支撑层叠结构的透光性基板的层叠结构 并且层叠结构和透光性基板接合在一起，其中层叠结构包括n型或p型导体层，导体层和基板接合在一起，并且导体层由 含有硼的III-V族化合物半导体。

公开(公告)号：US06512248B1

公开(公告)日：2003-01-28

申请号：US09691057

申请日：2000-10-19

申请人： Ryouichi Takeuchi ,  Kazuhiro Mitani ,  Wataru Nabekura ,  Takashi Udagawa ,  Takaharu Hoshina

发明人： Ryouichi Takeuchi ,  Kazuhiro Mitani ,  Wataru Nabekura ,  Takashi Udagawa ,  Takaharu Hoshina

IPC分类号： H01L2978

CPC分类号： H01L33/38

摘要： A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.