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1.发明授权公开(公告)号：US11538632B2
公开(公告)日：2022-12-27
申请号：US17368037
申请日：2021-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon Cheol Park , Daejin Yang , Doh Won Jung , Taewon Jeong , Giyoung Jo
Abstract: Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material: xAB3.(1−x)(BiaNab)TiO3 [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1
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2.发明授权公开(公告)号：US10475583B2
公开(公告)日：2019-11-12
申请号：US15875386
申请日：2018-01-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chan Kwak , Hyun Sik Kim , Jong Wook Roh , Kyoung-Seok Moon , Hyeon Cheol Park , Yoon Chul Son , Daejin Yang , Doh Won Jung , Youngjin Cho
IPC: H01G4/12 , C04B35/46 , H01G4/30 , H01G4/14 , C04B35/47 , C04B35/628 , H01C7/00 , H01C7/10 , H01C7/18 , H01C17/065 , H01G4/248 , H01G4/232
Abstract: A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.
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公开(公告)号：US09900979B2
公开(公告)日：2018-02-20
申请号：US15240132
申请日：2016-08-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hiesang Sohn , Chan Kwak , Mi Jeong Kim , Hyeon Cheol Park , Weonho Shin , Youngjin Cho
CPC classification number: H05K1/09 , C01B31/0484 , C01B32/184 , H05K1/0306 , H05K1/0313 , H05K3/146 , H05K3/22 , H05K2201/0145 , H05K2201/0154 , H05K2201/0158 , H05K2201/0323 , H05K2201/0338 , H05K2203/0783 , Y02E10/50
Abstract: A conductor includes a substrate, a first conductive layer disposed on the substrate and including two or more islands including graphene, and a second conductive layer disposed on the first conductive layer and including a conductive metal nanowire, wherein at least one of an upper surface and a lower surface of the islands including graphene includes a P-type dopant.
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公开(公告)号：US09666324B2
公开(公告)日：2017-05-30
申请号：US14461639
申请日：2014-08-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon Cheol Park , Kwang Hee Kim , Chan Kwak , Yoon Chul Son , Sang Mock Lee
IPC: C23C14/34 , H01B1/02 , H01B1/06 , C23C14/00 , H01L31/18 , C23C14/06 , H01B1/16 , H01L33/42 , H01L51/52
CPC classification number: H01B1/02 , C23C14/0036 , C23C14/0641 , C23C14/3414 , C23C14/3464 , H01B1/06 , H01B1/16 , H01L31/1892 , H01L33/42 , H01L51/5234 , Y10T428/26
Abstract: A transparent conductive thin film and an electronic device including the same are disclosed, the transparent conductive thin film including a titanium nitride or a zirconium nitride having a heterometal element selected from zinc (Zn), gallium (Ga), indium (In), and a combination thereof.
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5.发明授权公开(公告)号：US09073007B2
公开(公告)日：2015-07-07
申请号：US13767971
申请日：2013-02-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeon Cheol Park , Kwang Hee Kim , Byung Ki Ryu , Jae Ho Lee
CPC classification number: B01D53/228 , B01D71/022 , B01D2256/16 , B01D2325/02 , B21H7/00 , C01B3/503 , C01B2203/0405
Abstract: A separation membrane including an alloy wherein the alloy includes at least one Group 5 element and at least one Group 14 element, wherein the at least one Group 5 element and the at least one Group 14 element of the alloy define a body centered cubic structure.
Abstract translation: 包括合金的分离膜，其中所述合金包括至少一种第5族元素和至少一种第14族元素，其中所述合金的至少一种第5族元素和至少一种第14族元素定义为体心立方结构。
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Patent Agency Ranking
公开(公告)号：US11769630B2
公开(公告)日：2023-09-26
申请号：US17165300
申请日：2021-02-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taewon Jeong , Hyeon Cheol Park , Daejin Yang , Doh Won Jung , Giyoung Jo
IPC: H01G4/12 , C04B35/497 , G11C11/22 , H01L49/02 , H10B53/00
CPC classification number: H01G4/1254 , C04B35/497 , G11C11/221 , H01L28/60 , H10B53/00
Abstract: Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
(1−x)KaNabNbO3.xM(AcSbd)O3 [Formula 1]
wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0-
公开(公告)号：US11562857B2
公开(公告)日：2023-01-24
申请号：US17153371
申请日：2021-01-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Giyoung Jo , Hyeon Cheol Park , Daejin Yang , Doh Won Jung , Taewon Jeong
Abstract: A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.
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公开(公告)号：US10947126B2
公开(公告)日：2021-03-16
申请号：US16409096
申请日：2019-05-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doh Won Jung , Chan Kwak , Euncheol Do , Hyeon Cheol Park , Daejin Yang , Taewon Jeong , Giyoung Jo
Abstract: Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: AxByO3-δ wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.
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公开(公告)号：US09955577B2
公开(公告)日：2018-04-24
申请号：US15133352
申请日：2016-04-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngjin Cho , Hyeon Cheol Park , Kwanghee Kim , Weonho Shin , Daejin Yang
CPC classification number: H05K1/09 , G06F3/041 , G06F3/047 , G06F2203/04102 , H01B1/02 , H01B1/023 , H01B1/026 , H01B1/16 , H01L51/5206 , H01L51/5234 , H01L2251/301 , H01L2251/5338 , H05K1/0274 , H05K2201/0108 , H05K2201/0323 , H05K2201/0338 , H05K2201/0373 , H05K2201/0379 , H05K2201/0391 , H05K2201/09681 , H05K2201/10128
Abstract: A conductive component including: a substrate, a first layer comprising a plurality of island structures disposed on the substrate, wherein the island structures include graphene; and a second layer disposed on the first layer, wherein the second layer includes a plurality of conductive nanowires. Also, an electronic device including the conductive component.
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10.发明授权公开(公告)号：US12230444B2
公开(公告)日：2025-02-18
申请号：US17858552
申请日：2022-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon Cheol Park , Daejin Yang , Doh Won Jung , Taewon Jeong , Giyoung Jo
Abstract: Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.
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