公开(公告)号：US20170062435A1

公开(公告)日：2017-03-02

申请号：US15162912

申请日：2016-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyun IM ,  Han-Jin LIM ,  Jin-Won MA ,  Kong-Soo LEE ,  Ki-Vin IM

IPC: H01L27/108 ,  H01L29/06 ,  H01L23/532 ,  H01L23/522 ,  H01L23/535 ,  H01L23/528

CPC classification number: H01L27/10814 ,  B82Y10/00 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/53271 ,  H01L23/535 ,  H01L27/10823 ,  H01L27/10852 ,  H01L28/90 ,  H01L29/0676 ,  H01L29/66439 ,  H01L29/775

Abstract: Semiconductor devices and fabricating methods thereof are provided. A semiconductor device may include a substrate, a metal layer on the substrate, a seed layer on the metal layer, a nanowire including a pillar shape on the seed layer, a dielectric film conformally covering the nanowire, and an electrode film on the dielectric film.

Abstract translation: 提供半导体器件及其制造方法。 半导体装置可以包括基板，基板上的金属层，金属层上的种子层，种子层上的柱状的纳米线，保形地覆盖纳米线的电介质膜，以及电介质膜上的电极膜 。

公开(公告)号：US20130178070A1

公开(公告)日：2013-07-11

申请号：US13780560

申请日：2013-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Hyun KIM ,  Ki-Vin IM ,  Hoon-Sang CHOI ,  Moon-Hyeong HAN

IPC: H01L21/30

CPC classification number: H01L21/30 ,  C23C16/45546 ,  C23C16/45551 ,  C23C16/45578

Abstract: An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.

公开(公告)号：US20150311297A1

公开(公告)日：2015-10-29

申请号：US14556870

申请日：2014-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Badro IM ,  Ki-Vin IM ,  Young-kuk KIM ,  Han-jin LIM ,  In-Seak HWANG

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/4236 ,  H01L21/76224 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/78

Abstract: Provided are a semiconductor device and a method of forming thereof. The semiconductor device includes a substrate having an isolating trench defining active areas, gate structures formed in the active area and crossing the isolating trench, a first protection layer formed on the active area of the substrate, and a second protection layer formed on the first protection layer, wherein, in a first isolating area in which the gate structure and the isolating trench cross, the first protection layer is conformally formed on an inner wall and bottom of the isolating trench, and the second protection layer is formed on the first protection layer formed on the bottom of the isolating trench.

Abstract translation: 提供一种半导体器件及其形成方法。 半导体器件包括具有限定有源区的隔离沟槽的衬底，形成在有源区中并与隔离沟交叉的栅极结构，形成在衬底的有源区上的第一保护层和形成在第一保护层上的第二保护层 其中，在所述栅极结构和所述隔离沟槽交叉的第一隔离区域中，所述第一保护层保形地形成在所述隔离沟槽的内壁和底部上，并且所述第二保护层形成在所述第一保护层上 形成在隔离沟槽的底部。

公开(公告)号：US20150091133A1

公开(公告)日：2015-04-02

申请号：US14315770

申请日：2014-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Ho Cho ,  Hyun-Jeong Yang ,  Se-Hoon Oh ,  Yong-Jae Lee ,  Ki-Vin IM ,  Jae-Soon Lim ,  Han-Jin Lim ,  Jae-Wan Chang ,  Chang-Hwa Jung

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L27/10855 ,  H01L28/65 ,  H01L28/91

Abstract: In a semiconductor device and in methods of formation thereof, a semiconductor device comprises a substrate, a lower electrode on the substrate, and a dielectric layer on the lower electrode. An adhesion layer is positioned on the dielectric layer and an upper electrode is positioned on the adhesion layer. The adhesion layer contacts the dielectric layer and the upper electrode, and comprises a conductive material.

Abstract translation: 在半导体器件及其形成方法中，半导体器件包括衬底，衬底上的下电极和下电极上的电介质层。 粘合层位于介电层上，上电极位于粘合层上。 粘合层接触电介质层和上电极，并且包括导电材料。