公开(公告)号：US11563089B2

公开(公告)日：2023-01-24

申请号：US17471244

申请日：2021-09-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seojin Jeong ,  Jinyeong Joe ,  Seokhoon Kim ,  Jeongho Yoo ,  Seung Hun Lee ,  Sihyung Lee

IPC分类号： H01L21/82 ,  H01L21/76 ,  H01L29/16 ,  H01L29/10 ,  H01L29/04 ,  H01L29/167 ,  H01L29/36 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8238 ,  H01L21/762 ,  H01L29/66 ,  H01L29/08 ,  H01L21/02

摘要： A semiconductor device includes a substrate, a device isolation layer on the substrate, the device isolation layer defining a first active pattern, a pair of first source/drain patterns on the first active pattern, the pair of first source/drain patterns being spaced apart from each other in a first direction, and each of the pair of first source/drain patterns having a maximum first width in the first direction, a first channel pattern between the pair of first source/drain patterns, a gate electrode on the first channel pattern and extends in a second direction intersecting the first direction, and a first amorphous region in the first active pattern, the first amorphous region being below at least one of the pair of first source/drain patterns, and having a maximum second width in the first direction that is less than the maximum first width.

公开(公告)号：US11616144B2

公开(公告)日：2023-03-28

申请号：US16412796

申请日：2019-05-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sunguk Jang ,  Sujin Jung ,  Jinyeong Joe ,  Jeongho Yoo ,  Seung Hun Lee ,  Jongryeol Yoo

IPC分类号： H01L29/786 ,  H01L29/78 ,  H01L29/417 ,  H01L27/088 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

摘要： A semiconductor device includes a first active fin protruding from a substrate, a first gate pattern covering a side surface and a top surface of the first active fin, and first source/drain patterns at opposite sides of the first gate pattern, each of the first source/drain patterns including a first lower side and a second lower side spaced apart from each other, a first upper side extended from the first lower side, a second upper side extended from the second lower side. The first lower side may be inclined at a first angle relative to a top surface of the substrate, the second upper side may be inclined at a second angle relative to the top surface of the substrate, and the first angle may be greater than the second angle.

公开(公告)号：US11145723B2

公开(公告)日：2021-10-12

申请号：US16720363

申请日：2019-12-19

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seojin Jeong ,  Jinyeong Joe ,  Seokhoon Kim ,  Jeongho Yoo ,  Seung Hun Lee ,  Sihyung Lee

IPC分类号： H01L29/16 ,  H01L29/10 ,  H01L29/04 ,  H01L29/167 ,  H01L29/36 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8238 ,  H01L21/762 ,  H01L29/66 ,  H01L29/08 ,  H01L21/02

摘要： A semiconductor device includes a substrate, a device isolation layer on the substrate, the device isolation layer defining a first active pattern, a pair of first source/drain patterns on the first active pattern, the pair of first source/drain patterns being spaced apart from each other in a first direction, and each of the pair of first source/drain patterns having a maximum first width in the first direction, a first channel pattern between the pair of first source/drain patterns, a gate electrode on the first channel pattern and extends in a second direction intersecting the first direction, and a first amorphous region in the first active pattern, the first amorphous region being below at least one of the pair of first source/drain patterns, and having a maximum second width in the first direction that is less than the maximum first width.

公开(公告)号：US10756211B2

公开(公告)日：2020-08-25

申请号：US15379190

申请日：2016-12-14

申请人： Samsung Electronics Co., Ltd.

发明人： Keum Seok Park ,  Jungho Yoo ,  Jinyeong Joe ,  Bonyoung Koo ,  Dongsuk Shin ,  Hongsik Yoon ,  Byeongchan Lee

IPC分类号： H01L29/78 ,  H01L29/165 ,  H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/45

摘要： A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.

公开(公告)号：US09837500B2

公开(公告)日：2017-12-05

申请号：US15002379

申请日：2016-01-20

申请人： Samsung Electronics Co., Ltd.

发明人： Hyunjung Lee ,  Keumseok Park ,  Jinyeong Joe ,  Yong-Suk Tak

IPC分类号： H01L29/417 ,  H01L23/535 ,  H01L29/78

CPC分类号： H01L29/41791 ,  H01L29/785

摘要： Provided is a semiconductor device. In some examples, the semiconductor device includes an fin active region protruding from a substrate, gate patterns disposed on the fin active region, a source/drain region disposed on the fin active region between the gate patterns, and contact patterns disposed on the source/drain region. The source/drain region may have a protruding middle section, which may form a wave-shaped upper surface of the source/drain region.

公开(公告)号：US09553190B2

公开(公告)日：2017-01-24

申请号：US14673519

申请日：2015-03-30

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Keum Seok Park ,  Jungho Yoo ,  Jinyeong Joe ,  Bonyoung Koo ,  Dongsuk Shin ,  Hongsik Yoon ,  Byeongchan Lee

IPC分类号： H01L29/772 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66 ,  H01L29/165

CPC分类号： H01L29/7848 ,  H01L21/02532 ,  H01L21/02636 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/785

摘要： A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.

摘要翻译： 半导体器件包括从衬底突出的有源图案，在有源图案上交叉的栅极结构以及设置在栅极结构的相对侧上的有源图案上的源极/漏极区域。 源极/漏极区域中的每一个包括接触有源图案的第一外延图案和第一外延图案上的第二外延图案。 第一外延图案包括具有与衬底相同的晶格常数的材料，并且第二外延图案包括具有大于第一外延图案的晶格常数的晶格常数的材料。

公开(公告)号：US20240258230A1

公开(公告)日：2024-08-01

申请号：US18515463

申请日：2023-11-21

申请人： Samsung Electronics Co., Ltd.

发明人： Sungkeun Lim ,  Dohyun Go ,  Unki Kim ,  Hyohoon Byeon ,  Yuyeong Jo ,  Jinyeong Joe

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/5226 ,  H01L21/76898 ,  H01L23/291 ,  H01L23/3171

摘要： A semiconductor device includes a substrate; an active region extending on the substrate in a first direction; a protective layer on a lower surface of the substrate; an etch stop layer on a lower surface of the protective layer; a device isolation layer defining the active region; a gate structure on the active region and extending in a second direction, intersecting the first direction; a source/drain region on the active region on both lateral sides of the gate structure; a contact structure connected to the source/drain region; and a power transmission structure electrically connected to the contact structure.

公开(公告)号：US20230402458A1

公开(公告)日：2023-12-14

申请号：US18196191

申请日：2023-05-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jinyeong Joe ,  Hyohoon Byeon ,  Namhyun Lee ,  Sungkeun Lim ,  Yuyeong Jo

IPC分类号： H01L27/092 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L21/822 ,  H01L21/8238 ,  H01L29/66

CPC分类号： H01L27/0922 ,  H01L29/0673 ,  H01L29/1037 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/775 ,  H01L21/8221 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66439 ,  H01L29/66545

摘要： A semiconductor device includes a first transistor structure on a substrate, the first transistor structure including first channel layers spaced apart from each other, a first gate electrode surrounding the first channel layers, a first source/drain region connected to the first channel layers on a first side of the first gate electrode, and a second source/drain region connected to the first channel layers on a second side of the first gate electrode that is opposite to the first side of the first gate electrode, and a second transistor structure on the first transistor structure, the second transistor structure including second channel layers spaced apart from each other, a second gate electrode surrounding the second channel layers, and a third source/drain region connected to the second channel layers on a first side of the second gate electrode.

公开(公告)号：US20230387234A1

公开(公告)日：2023-11-30

申请号：US18189538

申请日：2023-03-24

申请人： Samsung Electronics Co., Ltd.

发明人： Hyohoon Byeon ,  Sungkeun Lim ,  Dohyun Go ,  Unki Kim ,  Yuyeong Jo ,  Jinyeong Joe

IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L29/775 ,  H01L29/06

CPC分类号： H01L29/42392 ,  H01L29/66545 ,  H01L29/78696 ,  H01L29/775 ,  H01L29/0673 ,  H01L29/66553

摘要： A semiconductor device includes a substrate including an active region extending in a first direction, a gate structure intersecting the active region on the substrate and extending in a second direction, a plurality of channel layers spaced apart from each other in a third direction, perpendicular to an upper surface of the substrate, on the active region and surrounded by the gate structure, and source/drain regions in recess regions of the active region, on opposite sides adjacent to the gate structure and electrically connected to the plurality of channel layers. Each of the plurality of channel layers includes first to third semiconductor layers sequentially stacked in the third direction, the first and third semiconductor layers include silicon (Si), and the second semiconductor layer includes silicon-germanium (SiGe). Side surfaces of the first to third semiconductor layers in the second direction are in contact with the gate structure.