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公开(公告)号：US11923195B2
公开(公告)日：2024-03-05
申请号：US17352851
申请日：2021-06-21
发明人： Junhee Choi , Vladmir Matias , Joohun Han
IPC分类号： H01L21/02
CPC分类号： H01L21/02502 , H01L21/02488 , H01L21/02491 , H01L21/02496 , H01L21/02505 , H01L21/02513 , H01L21/02516 , H01L21/02598 , H01L21/02192 , H01L21/02266 , H01L21/02422 , H01L21/02425 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02609 , H01L21/0262 , H01L21/02631
摘要： A single crystal semiconductor includes a strain compensation layer; an amorphous substrate disposed on the strain compensation layer; a lattice matching layer disposed on the amorphous substrate and including two or more single crystal layers; and a single crystal semiconductor layer disposed on the lattice matching layer, the lattice matching layer including a direction control film disposed on the amorphous substrate and including a single crystal structure, and a buffer layer including a material different from that of the direction control film, the buffer layer being disposed on the direction control film and including a single crystal structure.
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公开(公告)号：US11508820B2
公开(公告)日：2022-11-22
申请号：US17100340
申请日：2020-11-20
发明人： Junhee Choi , Joohun Han , Vladimir Matias
摘要： A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.
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公开(公告)号：US11916111B2
公开(公告)日：2024-02-27
申请号：US17969420
申请日：2022-10-19
发明人： Junhee Choi , Joohun Han , Vladimir Matias
CPC分类号： H01L29/1604 , H01L21/0254 , H01L21/0259 , H01L21/02428 , H01L21/02488 , H01L21/02546 , H01L21/02617 , H01L29/04
摘要： A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.
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公开(公告)号：US12034032B2
公开(公告)日：2024-07-09
申请号：US18308895
申请日：2023-04-28
发明人： Joohun Han , Junhee Choi , Kiho Kong , Jinjoo Park , Nakhyun Kim , Junghun Park
CPC分类号： H01L27/156 , H01L33/0093 , H01L33/0095 , H01L33/007
摘要： A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.
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公开(公告)号：US11776988B2
公开(公告)日：2023-10-03
申请号：US17227981
申请日：2021-04-12
发明人： Junhee Choi , Kiho Kong , Nakhyun Kim , Dongho Kim , Junghun Park , Jinjoo Park , Eunsung Lee , Joohun Han
IPC分类号： H01L27/15
CPC分类号： H01L27/156
摘要： A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.
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公开(公告)号：US11688827B2
公开(公告)日：2023-06-27
申请号：US17106515
申请日：2020-11-30
发明人： Nakhyun Kim , Junhee Choi , Jinjoo Park , Joohun Han
CPC分类号： H01L33/24 , H01L25/0753 , H01L25/167 , H01L29/0676 , H01L33/32 , H01L33/44
摘要： A nanorod semiconductor layer having a flat upper surface, a micro-LED including the nanorod semiconductor layer, a pixel plate including the micro-LED, a display device including the pixel plate, and an electronic device including the pixel plate are provided. The nanorod semiconductor layer includes: a main body; and an upper end formed from the main body, wherein the upper end includes: a first inclined surface; a second inclined surface facing the first inclined surface; and a flat upper surface between the first inclined surface and the second inclined surface, and a width of the upper end becomes narrower in an upward direction, and when a length of the upper end protruded from the main body (a thickness of the upper end) is L1, an inclination angle between a surface extending parallel to a surface selected from the first and second inclined surfaces and the flat upper surface is β, and a width of the main body is D, a width D1 of the flat upper surface satisfies Equation 1.
D1=D−(2×L1×tan β)-
7.发明申请公开(公告)号：US20220271210A1
公开(公告)日：2022-08-25
申请号：US17743028
申请日：2022-05-12
发明人： Kiho Kong , Junhee Choi , Jinjo Park , Joohun Han
摘要： A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.
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公开(公告)号：US20220109021A1
公开(公告)日：2022-04-07
申请号：US17207105
申请日：2021-03-19
发明人： Kiho Kong , Junhee Choi
摘要： A micro light emitting display apparatus and a method of manufacturing the micro light emitting display apparatus are disclosed. The micro light emitting display apparatus includes a micro light emitting element, a driving transistor connected to the micro light emitting element, a switching transistor connected to the driving transistor, and a first opening is provided to expose a source region or a drain region of the switching transistor, and a gate electrode of the driving transistor is provided in the first opening and in contact with the source region or the drain region of the switching transistor.
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9.发明授权公开(公告)号：US11056473B2
公开(公告)日：2021-07-06
申请号：US16670457
申请日：2019-10-31
发明人： Junhee Choi , Euijoon Yoon
摘要： Provided are a micro light source array for a display device, a display device including the micro light source array, and a method of manufacturing the display device. The micro light source array includes: a plurality of silicon sub-mounts provided on a substrate, each silicon sub-mount from among the plurality of silicon sub-mounts corresponding to a respective sub-pixel from among a plurality of sub-pixels of a display device, the plurality of silicon sub-mounts being separated from each other by a plurality of trenches; a plurality of light emitting device chips coupled to the plurality of silicon sub-mounts; and a plurality of driving circuits provided at the plurality of silicon sub-mounts.
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公开(公告)号：US20200168663A1
公开(公告)日：2020-05-28
申请号：US16589359
申请日：2019-10-01
发明人： Junhee Choi , Sungjin Kang , Kiho Kong , Junghun Park , Jinjoo Park , Joohun Han , Kyungwook Hwang
IPC分类号： H01L27/15 , H01L33/14 , H01L33/22 , H01L33/40 , H01L33/42 , H01L33/50 , H01L33/60 , H01L33/00
摘要： Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.
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