Abstract:
A phosphonium compound, an epoxy resin composition including the same, a semiconductor device encapsulated with the same, and a method of encapsulating a semiconductor device, the phosphonium compound being represented by Formula 1:
Abstract:
A phosphonium compound, a method of preparing the same, an epoxy resin composition including the same, and a semiconductor device encapsulated with the same, the compound being represented by Formula 1:
Abstract:
A phosphonium compound, an epoxy resin composition, a method of preparing a phosphonium compound, and a semiconductor device encapsulated with the epoxy resin composition, the compound being represented by Formula 1:
Abstract:
The present invention relates to a phosphonium-based compound represented by chemical formula 1, an epoxy resin composition containing the same, and a semiconductor device manufactured by using the same.
Abstract:
An epoxy resin composition and a semiconductor device, the composition including an epoxy resin; a curing agent; an inorganic filler; a curing catalyst; and a silicon compound, wherein the curing catalyst includes a phosphonium compound represented by the following Formula 4 and the silicon compound comprises a silicon compound represented by the following Formula 7:
Abstract:
An epoxy resin composition for encapsulation of a semiconductor device and a semiconductor device encapsulated with the epoxy resin composition, the composition including an epoxy resin; a curing agent; an inorganic filler; a curing catalyst; and a compound containing at least one hydroxyl group, wherein the curing catalyst includes a phosphonium compound represented by Formula 4: