METHOD FOR DEPOSITING FILM AND FILM DEPOSITION SYSTEM
    2.
    发明申请
    METHOD FOR DEPOSITING FILM AND FILM DEPOSITION SYSTEM 审中-公开
    沉积膜和膜沉积系统的方法

    公开(公告)号:US20140205762A1

    公开(公告)日:2014-07-24

    申请号:US13700527

    申请日:2011-09-30

    CPC classification number: B05D1/00 C23C14/022 C23C14/06 C23C14/22 C23C14/546

    Abstract: A method for depositing a film includes depositing an oil repellent film having an enhanced abrasion resistance properties and which is suitable for practical use. A film deposition system, wherein a substrate holder having a substrate holding surface for holding a plurality of substrates is provided rotatably to inside a vacuum container, can include an ion source provided to inside the vacuum container to have a configuration and in an arrangement and/or a direction, by which an ion beam can be irradiated only to a partial region of the substrate holding surface. A deposition source can be provided to inside the vacuum container such that a film deposition material of an oil repellent film can be supplied to the whole region of the substrate holding surface. An operation of the ion source can be stopped before starting operation of the deposition source.

    Abstract translation: 一种沉积薄膜的方法包括沉积具有增强的耐磨性能并适用于实际应用的拒油膜。 一种膜沉积系统,其中具有用于保持多个基板的基板保持表面的基板保持件可旋转地设置在真空容器内部,可以包括设置在真空容器内部的离子源,以具有结构和/ 或离子束仅能够照射到基板保持表面的部分区域的方向。 可以在真空容器内部设置沉积源,使得可以将斥油膜的成膜材料供应到基板保持表面的整个区域。 在开始沉积源的操作之前,可以停止离子源的操作。

    THIN FILM FORMATION APPARATUS, SPUTTERING CATHODE, AND METHOD OF FORMING THIN FILM
    4.
    发明申请
    THIN FILM FORMATION APPARATUS, SPUTTERING CATHODE, AND METHOD OF FORMING THIN FILM 审中-公开
    薄膜形成装置,溅射阴极和形成薄膜的方法

    公开(公告)号:US20150284842A1

    公开(公告)日:2015-10-08

    申请号:US14437708

    申请日:2012-10-23

    Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.

    Abstract translation: 本发明提供薄膜形成装置,溅射阴极以及能够在大尺寸基板上以高成膜速度形成多层光学薄膜的薄膜形成方法。 薄膜形成装置通过溅射在真空室中的基板上形成金属化合物的薄膜。 真空室在其内部设置有由金属或导电金属化合物构成的靶,以及用于产生活性气体的活性物质的活性物质源。 活性物质源具有用于供应反应性气体的气体源,以及用于向真空室供应能量以将反应气体激发至等离子体状态的能量源。 能量源在其与真空室之间设置有用于将能量供应到真空室中的介电窗口。

    FILM FORMATION METHOD AND FILM FORMATION APPARATUS FOR THIN FILM
    5.
    发明申请
    FILM FORMATION METHOD AND FILM FORMATION APPARATUS FOR THIN FILM 审中-公开
    薄膜成膜方法及薄膜成膜装置

    公开(公告)号:US20170072418A1

    公开(公告)日:2017-03-16

    申请号:US15102471

    申请日:2014-05-23

    Abstract: A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11 in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, and a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end. A solution including two or more kinds of materials is used as the coating agent 21. The solution is ejected to the substrate in an atmosphere at a pressure set based on vapor pressures of respective materials composing the solution.

    Abstract translation: 提供了一种以低成本形成耐久性的薄膜的方法。 在成膜方法中使用成膜装置1。 装置1包括其中底部100放置在下部的真空容器11,用于容器11内的排气的真空泵15,用于储存设置在容器11外部的涂料21的储存容器23和喷嘴 具有能够在其一端喷射涂布剂21的喷射部19。 使用包含两种或更多种材料的溶液作为涂布剂21.在基于构成溶液的各种材料的蒸气压设定的压力的气氛中将溶液喷射到基板。

    FILM FORMATION METHOD AND FILM FORMATION APPARATUS FOR THIN FILM
    6.
    发明申请
    FILM FORMATION METHOD AND FILM FORMATION APPARATUS FOR THIN FILM 审中-公开
    薄膜成膜方法及薄膜成膜装置

    公开(公告)号:US20170066001A1

    公开(公告)日:2017-03-09

    申请号:US15102499

    申请日:2015-05-01

    Abstract: A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11, in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end and a pressurizing means (a gas supply source 29, etc.) for pressurizing a liquid surface of a coating agent 21 stored in the storage container 23. A solution, which includes two or more kinds of materials including a first material (S1) and a second material (S2) having a higher vapor pressure (P2) than a vapor pressure (P1) of the S1 and has a concentration of the first material being 0.01 wt % or more, is used as the coating agent 21. The coating agent 21 is ejected to a substrate in an atmosphere with a pressure of P2 or higher (excepting pressures higher than P2 by one digit or more) and with an ejection pressure of 0.05 to 0.3 MPa.

    Abstract translation: 提供了一种以低成本形成耐久性的薄膜的方法。 在成膜方法中使用成膜装置1。 装置1包括:底部100放置在下部的真空容器11,容器11内部的排气用真空泵15,储存容器11内设置的涂布剂21的收纳容器23,喷嘴 具有能够在其一端喷射涂布剂21的喷射部19和用于对储存容器23中储存的涂布剂21的液面加压的加压装置(气体供给源29等) 其包括具有比S1的蒸气压(P1)高的蒸气压(P2)的第一材料(S1)和第二材料(S2)的两种或更多种材料,并且第一材料的浓度为0.01 使用重量%以上的涂料21作为涂布剂21.涂布剂21在压力为P2以上的气氛(除了高于P2的压力一位以上)喷射到基板上,喷射压力为 0.05〜0.3MPa。

    Method for Depositing Silicon Carbide Film
    7.
    发明申请
    Method for Depositing Silicon Carbide Film 有权
    沉积碳化硅膜的方法

    公开(公告)号:US20140205844A1

    公开(公告)日:2014-07-24

    申请号:US13700695

    申请日:2011-08-02

    Abstract: A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.

    Abstract translation: 提供了适用于光学用途的具有高透射率和高膜强度的碳化硅薄膜的成膜方法。 该膜可以在短时间内和低耐热性基材上安全有效地形成。 该方法可以包括通过使用成膜装置在移动的基板上沉积碳化硅薄膜,所述成膜装置被配置成使得反应处理区域和成膜处理区域在真空容器中彼此空间上分开布置。 硅靶可以在一个区域溅射,并且碳靶可以在另一个区域溅射。 由此,在基板上形成含有硅和碳的层间薄膜。 接下来,在另一区域中,层间薄膜可以暴露于在包含惰性气体和氢气的混合气体的气氛中产生的等离子体。

    Translucent Hard Thin Film
    8.
    发明申请
    Translucent Hard Thin Film 有权
    半透明硬薄膜

    公开(公告)号:US20140356601A1

    公开(公告)日:2014-12-04

    申请号:US13700686

    申请日:2012-02-16

    Abstract: A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO2 layer and SiC layers alternately and the entire film thickness is 3000 nm or more. A film thickness per layer is 5 to 30 nm in a SiC layer and 30% to 60% of that of the SiO2 layer in a SiC layer.

    Abstract translation: 提供透光性和膜强度高的半透明硬质薄膜。 半透明硬质薄膜可以由形成在基板表面上的层叠膜构成,其中层叠膜具有通过交替堆叠多个SiO 2层和SiC层而获得的超晶格结构,并且整个膜厚度为3000nm以上。 SiC层中的每层的膜厚度为5〜30nm,SiC层的SiO 2层的膜厚为30〜60%。

    Thin film forming apparatus
    9.
    发明授权
    Thin film forming apparatus 有权
    薄膜成型装置

    公开(公告)号:US09499897B2

    公开(公告)日:2016-11-22

    申请号:US13621337

    申请日:2012-09-17

    Abstract: Provided is a thin film forming apparatus for reducing operation time and cost by forming a film only on a specific portion on substrates. A substrate holding mechanism provided in the apparatus includes: substrate holding members holding substrates in a manner that a part of a non-film forming portion of a substrate overlaps the other substrate and a film forming portion is exposed, a support member supporting the substrate holding members, and a rotation member which rotates the support member. The substrate holding members include: holding surfaces holding the substrates and disposed between a film forming source and the substrates, step portions formed between the holding surfaces in a manner that ends of the substrates respectively contact with the step portions, and opening portions formed on the holding surfaces of the portion corresponding to the film forming portion when the ends of the substrates contact with the step portions.

    Abstract translation: 提供了一种通过仅在基板上的特定部分上形成膜来减少操作时间和成本的薄膜形成装置。 设置在该设备中的基板保持机构包括:基板保持部件,其以基板的非成膜部分的一部分与另一个基板重叠并且成膜部分露出的方式保持基板;支撑部件,其支撑基板保持 构件,以及使支撑构件旋转的旋转构件。 基板保持构件包括:保持基板并且配置在成膜源与基板之间的保持面,以与基板的端部分别接触的台阶部分之间形成在保持面之间的台阶部, 当基板的端部与台阶部分接触时,保持对应于成膜部分的部分的表面。

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