公开(公告)号：US20170345658A1

公开(公告)日：2017-11-30

申请号：US15534317

申请日：2015-12-08

申请人： SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry

发明人： Keisuke FUKADA ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Hideyuki UEHIGASHI ,  Hiroaki FUJIBAYASHI ,  Masami NAITO ,  Kazukuni HARA ,  Takahiro KOZAWA ,  Hirofumi AOKI

IPC分类号： H01L21/205 ,  C30B25/20 ,  C30B25/18 ,  C30B25/14 ,  C23C16/455 ,  C30B29/36 ,  C23C16/42

CPC分类号： H01L21/205 ,  C23C16/325 ,  C23C16/42 ,  C23C16/455 ,  C23C16/4557 ,  C23C16/45574 ,  C30B25/14 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

摘要： A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.

公开(公告)号：US20200083330A1

公开(公告)日：2020-03-12

申请号：US16616780

申请日：2018-04-19

申请人： SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

发明人： Keisuke FUKADA ,  Naoto ISHIBASHI ,  Akira BANDO ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Kazukuni HARA ,  Masami NAITO ,  Hideyuki UEHIGASHI ,  Hiroaki FUJIBAYASHI ,  Hirofumi AOKI ,  Toshikazu SUGIURA ,  Katsumi SUZUKI

IPC分类号： H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

摘要： A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

公开(公告)号：US20210102311A1

公开(公告)日：2021-04-08

申请号：US17123338

申请日：2020-12-16

申请人： DENSO CORPORATION ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Yuichiro TOKUDA ,  Hideyuki UEHIGASHI ,  Norihiro HOSHINO ,  Hidekazu TSUCHIDA ,  Isaho KAMATA

IPC分类号： C30B29/36 ,  C30B25/20

摘要： A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×1015 cm−3 or more.

公开(公告)号：US20200087815A1

公开(公告)日：2020-03-19

申请号：US16466369

申请日：2017-12-22

申请人： SHOWA DENKO K.K.

发明人： Yohei FUJIKAWA ,  Hideyuki UEHIGASHI

IPC分类号： C30B23/06 ,  C30B29/36 ,  C30B33/10

摘要： A manufacturing method of a SiC ingot includes a crystal growth step of growing a crystal on a principal plane having an offset angle with respect to a {0001} plane, in which, at least in a latter half growth step of the crystal growth step, after the crystal in the crystal growth step grows 7 mm or more from the principal plane, and in which, the crystal is grown by setting an acute angle, between the {0001} plane and an inclined plane which is perpendicular to a cut section cut along an offset direction and passes through both a center of a crystal growth surface and an offset downstream end portion of the crystal growth surface, to be equal to or more than an angle smaller than an offset angle by 2° and equal to or less than 8.6°.