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公开(公告)号：US20200083330A1
公开(公告)日：2020-03-12
申请号：US16616780
申请日：2018-04-19
发明人： Keisuke FUKADA , Naoto ISHIBASHI , Akira BANDO , Masahiko ITO , Isaho KAMATA , Hidekazu TSUCHIDA , Kazukuni HARA , Masami NAITO , Hideyuki UEHIGASHI , Hiroaki FUJIBAYASHI , Hirofumi AOKI , Toshikazu SUGIURA , Katsumi SUZUKI
摘要： A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.
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公开(公告)号：US20170345658A1
公开(公告)日：2017-11-30
申请号：US15534317
申请日：2015-12-08
发明人： Keisuke FUKADA , Masahiko ITO , Isaho KAMATA , Hidekazu TSUCHIDA , Hideyuki UEHIGASHI , Hiroaki FUJIBAYASHI , Masami NAITO , Kazukuni HARA , Takahiro KOZAWA , Hirofumi AOKI
IPC分类号： H01L21/205 , C30B25/20 , C30B25/18 , C30B25/14 , C23C16/455 , C30B29/36 , C23C16/42
CPC分类号： H01L21/205 , C23C16/325 , C23C16/42 , C23C16/455 , C23C16/4557 , C23C16/45574 , C30B25/14 , C30B25/186 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/0262
摘要： A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.
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3.发明公开公开(公告)号：US20240191392A1
公开(公告)日：2024-06-13
申请号：US18588308
申请日：2024-02-27
申请人： DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Akiyoshi HORIAI , Takeshi OKAMOTO , Takahiro KANDA , Norihiro HOSHINO , Kiyoshi BETSUYAKU , Isaho KAMATA , Hidekazu TSUCHIDA , Takashi KANEMURA
摘要： A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ΔT in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ΔT≤10° ° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.
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公开(公告)号：US20130152853A1
公开(公告)日：2013-06-20
申请号：US13714918
申请日：2012-12-14
申请人： NuFlare Technology, Inc. , Central Research Institute of Electric Power Industry , Denso Corporation , Ayumu ADACHI , Koichi NISHIKAWA
发明人： Kunihiko SUZUKI , Yuusuke SATO , Hideki ITO , Hidekazu TSUCHIDA , Isaho KAMATA , Masahiko ITO , Masami NAITO , Hiroaki FUJIBAYASHI , Ayumu ADACHI , Koichi NISHIKAWA
CPC分类号： C30B25/165 , C30B25/14
摘要： A film-forming apparatus 100 supplies a plurality of gases toward a substrate 101 in a chamber 103 using a shower plate 124. The shower plate 124 has a plurality of gas flow paths 121 extending within the shower plate along a first face of the substrate 101 side and connected to gas pipes 131 supplying a plurality of gases, and a plurality of gas jetting holes 129 bored such that the plurality of gas flow paths 121 and the chamber 103 communicate with each other on the first face side. In the film-forming apparatus 100, the plurality of gases supplied from the gas pipes 131 to the plurality of gas flow paths 121 of the shower plate 124 are supplied from the gas jetting holes 129 to the substrate 101 without being mixed inside of and vicinity of the shower plate 124.
摘要翻译： 成膜装置100使用淋浴板124向腔室103内的基板101供给多个气体。淋浴板124具有沿着基板101的第一面在喷淋板内延伸的多个气体流路121 并且连接到供应多个气体的气体管道131，以及多个气体喷射孔129，其多个气体流路121和腔室103在第一面侧相互连通。 在成膜装置100中，从气体管131供给到淋浴板124的多个气体流路121的多个气体从气体喷射孔129供给到基板101而不混入内部 的淋浴板124。
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5.发明公开公开(公告)号：US20240110309A1
公开(公告)日：2024-04-04
申请号：US18478203
申请日：2023-09-29
申请人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY , MIRISE Technologies Corporation , DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Kiyoshi BETSUYAKU , Norihiro HOSHINO , Isaho KAMATA , Hidekazu TSUCHIDA , Akiyoshi HORIAI , Takeshi OKAMOTO
摘要： Provided are a method for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot which ensure a high crystal growth rate and increase the ratio of conversion from basal plane dislocations to threading edge dislocations. The method prepares a seed substrate composed of silicon carbide having an off-angle in a [1-100] direction with respect to a {0001} plane; and grows a silicon carbide single crystal layer on the seed substrate by an HTCVD method, thereby converting basal plane dislocations contained in the seed substrate to threading edge dislocations during crystal growth.
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6.发明公开公开(公告)号：US20240110308A1
公开(公告)日：2024-04-04
申请号：US18468030
申请日：2023-09-15
申请人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY , MIRISE Technologies Corporation , DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Kiyoshi BETSUYAKU , Norihiro HOSHINO , Isaho KAMATA , Hidekazu TSUCHIDA , Takeshi OKAMOTO , Takahiro KANDA
摘要： Provided are a method for manufacturing a silicon carbide single crystal, which can suppress conversion of threading edge dislocations into prismatic plane dislocations and conversion of the prismatic plane dislocations into basal plane dislocations; and a silicon carbide single crystal ingot and a silicon carbide wafer, in which conversion from threading edge dislocations into prismatic plane dislocations and conversion from the prismatic plane dislocations into basal plane dislocations have been suppressed. A silicon carbide single crystal is grown on the surface of a seed substrate by a gas method so that a temperature gradient in the radial direction of the seed substrate takes a predetermined value or lower during the growth. The area of regions T1 to T4, where regions R1 to R3 of a basal plane whose shear stresses exceed critical resolved shear stress, and regions S1 to S4 of a prismatic plane whose shear stresses exceed critical resolved shear stress overlap, is less than a half of the area of a crystal growth surface. Furthermore, the area of the regions T1 to T4 is smaller than the area of regions V1 to V4 where a region R4 of the basal plane whose shear stress does not exceed the critical resolved shear stress overlaps the regions S1 to S4.
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公开(公告)号：US20220112623A1
公开(公告)日：2022-04-14
申请号：US17498964
申请日：2021-10-12
摘要： A method and an apparatus for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot, obtaining a silicon carbide single crystal reduced in defects such as threading dislocations, are provided. The method manufactures a silicon carbide single crystal by supplying a raw material gas into a reaction vessel with a seed substrate, and heats the interior to grow a silicon carbide single crystal on the surface of the seed substrate. The method includes growing the silicon carbide single crystal on the seed substrate surface, while controlling the temperature, to perform pair annihilation of threading dislocations or synthesis of the threading dislocations; and a second step of maintaining the temperature inside the reaction vessel in the state of the first predetermined temperature after execution of the first step, to bring the leading ends of the threading dislocations close to the surface of the seed substrate.
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公开(公告)号：US20210102311A1
公开(公告)日：2021-04-08
申请号：US17123338
申请日：2020-12-16
摘要： A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×1015 cm−3 or more.
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9.发明申请公开(公告)号：US20160138190A1
公开(公告)日：2016-05-19
申请号：US14899273
申请日：2014-06-19
申请人： DENSO CORPORATION , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY , NUFLARE TECHNOLOGY, INC. , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Hiroaki FUJIBAYASHI , Masami NAITO , Masahiko ITO , Isaho KAMATA , Hidekazu TSUCHIDA , Hideki ITO , Ayumu ADACHI , Koichi NISHIKAWA
IPC分类号： C30B25/14 , C30B29/36 , C23C16/458 , C30B25/16 , H01L21/02 , C23C16/455
CPC分类号： C30B25/14 , C23C16/325 , C23C16/45519 , C23C16/45548 , C23C16/45553 , C23C16/45574 , C23C16/45587 , C23C16/4584 , C23C16/4586 , C30B25/165 , C30B29/36 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262
摘要： In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.
摘要翻译： 在碳化硅半导体膜形成装置中，第一至第三气体分别通过第一至第三入口引入第一至第三分离室。 第一和第二气体是包括气体和碳原料的硅原料，包括气体，第三气体不包括硅和碳。 第一和第二气体分别通过从第一和第二分离室延伸的第一和第二供应路径独立地供应到生长空间。 第三气体通过第三供给路径从第一和第二气体之间的第三分离室引入。
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10.发明申请METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL WAFER, HEXAGONAL SINGLE CRYSTAL WAFER, AND HEXAGONAL SINGLE CRYSTAL ELEMENT 审中-公开用于生产六角单晶的方法，用于生产六角形单晶的方法，六角形单晶和六角形单晶公开(公告)号：US20150376813A1
公开(公告)日：2015-12-31
申请号：US14765092
申请日：2014-01-31
摘要： When growing a hexagonal single crystal, an off angle is set, in a first direction [11-20] with respect to a basal plane {0001} serving as a main crystal growth plane, in a hexagonal single crystal for use as a foundation in performing crystal growth; and a cross-sectional shape which is decreased in crystal thickness in a stair-step manner from a reference line AA′ parallel to the first direction [11-20] toward second directions [−1100], [1-100] on both sides of the reference line and orthogonal to the first direction [11-20]. Dislocations threading in a c-axis direction, contained in the hexagonal single crystal, are converted into defects inclined ≧40° from the c-axis direction toward the basal plane during crystal growth, and the direction of propagation of the defects is controlled to a direction between a direction [−1-120] opposite to the first direction [11-20] and the second directions [−1100], [1-100], to discharge defects.
摘要翻译： 当生长六边形单晶时，在作为主晶体生长平面的基底面{0001}的第一方向[11-20]上设置偏角，以六角形单晶作为基础 进行晶体生长; 以及从平行于第一方向[11-20]的基准线AA'朝向第二方向[-1100]，[1-100]两侧的阶梯式的晶体厚度减小的截面形状 的参考线并与第一个方向正交[11-20]。 包含在六边形单晶中的沿c轴方向的位错在晶体生长期间被转换成从c轴方向向基面倾斜≥40°的缺陷，并且将缺陷的传播方向控制为 在与第一方向[11-20]相反的方向[-1-120]和第二方向[-1100]之间的方向[1-100]，以排出缺陷。
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