Abstract:
A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
Abstract:
A reset signal generation apparatus includes a reset signal generation unit and a reset signal expansion unit. The reset signal generation unit enables a reset signal and an enable signal in response to a reset input signal, and disables the reset signal in response to a pulse width extension signal. The reset signal expansion unit generates the pulse width extension signal that is enabled for a predetermined time, in response to the enable signal.
Abstract:
A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
Abstract:
A phase mixing circuit includes a first mixing unit configured to mix phases of first and second clocks at a predetermined ratio, and generate a first mixed signal; a second mixing unit configured to mix phases of an inverted signal of the first clock and an inverted signal of the second clock at the predetermined ratio, and generate a second mixed signal; and an output unit configured to generate an output signal based on of the first and second mixed signals.
Abstract:
A clock generation circuit includes a delay line, a delay modeling block, a phase detection block, a multi-update signal generation block, and a delay line. The delay line delays an input clock and generates a delayed clock. The delay modeling block delays the delayed clock by a modeled delay value and generates a feedback clock. The phase detection block compares phases of the input clock and the feedback clock and generates phase information, and quantizes a phase difference between the input clock and the feedback clock and generates phase codes. The multi-update signal generation block generates a multi-update signal in response to the phase codes. The delay line control block changes a delay amount of the delay line in response to the multi-update signal and the phase information.
Abstract:
A memory controller includes a plurality of processors, a memory device and a memory manager. The memory device includes a plurality of segments, which are divided into a plurality of segment groups, to which group identifiers are respectively assigned. The memory manager is configured to map a first buffer identifier to a first group identifier from among the group identifiers, select one or more segments only from a first segment group, to which the first group identifier is assigned among the plurality of segment groups, map the first buffer identifier to the one or more segments, and allocate, to a first processor from among the plurality of processors, the first buffer identifier and the one or more segments.
Abstract:
A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
Abstract:
A delay circuit includes a clock delay line, a command delay line, a delay line control block, and a shared shift register block. The clock delay line delays an input clock and generates a delayed clock. The command delay line delays a command signal and generates a delayed command signal. The delay line control block generates a control signal according to a result of comparing phases of a feedback clock which is generated as the delayed clock is delayed by a modeled delay value and the input clock. The shared shift register block sets delay amounts of the clock delay line and the command delay line to be substantially the same with each other, in response to the control signal.
Abstract:
A clock generation circuit includes a delay line, which delays an input clock and generates a delayed clock, a delay modeling unit, which delays the delayed clock by a modeled delay value and generates a feedback clock, a phase detection unit, which compares phases of the input clock and the feedback clock and generates a phase detection signal, a filter unit, which receives the phase detection signal and generates phase information, generates an update signal when a difference between the numbers of phase detection signals with a first and a second level generated is greater than or equal to a threshold value, and generates the update signal after a lapse of a predetermined time when the difference is less than the threshold value, and a delay line control unit, which sets a delay value of the delay line in response to the update signal and the phase information.