公开(公告)号：US09595498B2

公开(公告)日：2017-03-14

申请号：US14960716

申请日：2015-12-07

Applicant: SK hynix Inc.

Inventor： Chang Kun Park ,  Seong Hwi Song ,  Yong Ju Kim ,  Sung Woo Han ,  Hee Woong Song ,  Ic Su Oh ,  Hyung Soo Kim ,  Tae Jin Hwang ,  Hae Rang Choi ,  Ji Wang Lee ,  Jae Min Jang

IPC: H01L23/52 ,  H01L23/00 ,  H01L23/528 ,  H01L27/105

CPC classification number: H01L24/06 ,  H01L23/5286 ,  H01L24/09 ,  H01L27/1052 ,  H01L2224/061 ,  H01L2224/0612 ,  H01L2224/06515 ,  H01L2224/091 ,  H01L2224/09515 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/30101 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

Abstract translation: 半导体存储器件包括具有芯片焊盘形成区域的半导体电路基板。 在芯片焊盘区域一侧的半导体电路基板上形成一对数据线。 一对数据线沿着半导体电路基板的芯片焊盘区域延伸的方向延伸。 这对数据线被布置为彼此相邻并且接收一对差分数据信号。 电源线形成在芯片焊盘区域的另一侧的半导体电路基板上。 电源线沿着半导体电路基板的芯片焊盘区域延伸的方向延伸，并且电源线接收电力。

公开(公告)号：US09209145B2

公开(公告)日：2015-12-08

申请号：US14550445

申请日：2014-11-21

Applicant: SK hynix Inc.

Inventor： Chang Kun Park ,  Seong Hwi Song ,  Yong Ju Kim ,  Sung Woo Han ,  Hee Woong Song ,  Ic Su Oh ,  Hyung Soo Kim ,  Tae Jin Hwang ,  Hae Rang Choi ,  Ji Wang Lee ,  Jae Min Jang

IPC: H01L27/10 ,  H01L23/00 ,  H01L23/528 ,  H01L27/105

CPC classification number: H01L24/06 ,  H01L23/5286 ,  H01L24/09 ,  H01L27/1052 ,  H01L2224/061 ,  H01L2224/0612 ,  H01L2224/06515 ,  H01L2224/091 ,  H01L2224/09515 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/30101 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

公开(公告)号：US09124252B2

公开(公告)日：2015-09-01

申请号：US14581357

申请日：2014-12-23

Applicant: SK hynix Inc.

Inventor： Sung Woo Han ,  Ic Su Oh ,  Jun Ho Lee ,  Boo Ho Jung ,  Sun Ki Cho ,  Yang Hee Kim ,  Tae Hoon Kim

IPC: H04B3/32 ,  H04M3/34 ,  G06F17/50 ,  H03K3/013 ,  H03K5/12

CPC classification number: H03K3/013 ,  G06F17/5022 ,  H03K5/12

Abstract: Provided is a semiconductor apparatus which includes a plurality of output buffers configured to connect a plurality of power sources, and a data noise measuring unit configured to fix an output data of a selected output buffer among the plurality of output buffers to have a specific level, measure a noise of the output data using a capacitance and control a slew rate of the plurality of output buffers based on the noise.

Abstract translation: 提供了一种半导体装置，其包括多个输出缓冲器，其被配置为连接多个电源;以及数据噪声测量单元，被配置为将所述多个输出缓冲器中的所选输出缓冲器的输出数据固定为具有特定电平， 使用电容测量输出数据的噪声，并基于噪声控制多个输出缓冲器的转换速率。

公开(公告)号：US09190372B2

公开(公告)日：2015-11-17

申请号：US14550328

申请日：2014-11-21

Applicant: SK hynix Inc.

Inventor： Chang Kun Park ,  Seong Hwi Song ,  Yong Ju Kim ,  Sung Woo Han ,  Hee Woong Song ,  Ic Su Oh ,  Hyung Soo Kim ,  Tae Jin Hwang ,  Hae Rang Choi ,  Ji Wang Lee ,  Jae Min Jang

IPC: H01L27/10 ,  H01L23/00 ,  H01L23/528 ,  H01L27/105

CPC classification number: H01L24/06 ,  H01L23/5286 ,  H01L24/09 ,  H01L27/1052 ,  H01L2224/061 ,  H01L2224/0612 ,  H01L2224/06515 ,  H01L2224/091 ,  H01L2224/09515 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/30101 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

Abstract translation: 半导体存储器件包括具有芯片焊盘形成区域的半导体电路基板。 在芯片焊盘区域一侧的半导体电路基板上形成一对数据线。 一对数据线沿着半导体电路基板的芯片焊盘区域延伸的方向延伸。 这对数据线被布置为彼此相邻并且接收一对差分数据信号。 电源线形成在芯片焊盘区域的另一侧的半导体电路基板上。 电源线沿着半导体电路基板的芯片焊盘区域延伸的方向延伸，并且电源线接收电力。

公开(公告)号：US09609742B2

公开(公告)日：2017-03-28

申请号：US14014652

申请日：2013-08-30

Applicant: SK hynix Inc.

Inventor： Eul Chul Jang ,  Qwan Ho Chung ,  Sang Joon Lim ,  Sung Woo Han

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H05K1/02 ,  H01L23/498 ,  H01L23/552

CPC classification number: H05K1/0224 ,  H01L23/49838 ,  H01L23/552 ,  H01L2924/0002 ,  H05K1/0219 ,  H05K1/0253 ,  H05K2201/09236 ,  H05K2201/093 ,  H05K2201/09345 ,  H05K2201/09681 ,  H05K2201/097 ,  H05K2201/09727 ,  H01L2924/00

Abstract: Package substrates are provided. The package substrate may include a power line and a ground line on a first surface of a substrate body; a plurality of signal lines on the first surface between the power line and the ground line; and a lower ground pattern and a lower power pattern positioned on a second surface of the substrate body opposite to the first surface. The lower ground pattern may be disposed to be opposite to the power line and the lower power pattern may be disposed to be opposite to the ground line. Related semiconductor packages are also provided.

公开(公告)号：US08941406B2

公开(公告)日：2015-01-27

申请号：US13720992

申请日：2012-12-19

Applicant: SK Hynix Inc.

Inventor： Sung Woo Han ,  Ic Su Oh ,  Jun Ho Lee ,  Boo Ho Jung ,  Sun Ki Cho ,  Yang Hee Kim ,  Tae Hoon Kim

IPC: H04B3/32 ,  H04M3/34 ,  G06F17/50 ,  H03K5/12

CPC classification number: H03K3/013 ,  G06F17/5022 ,  H03K5/12

Abstract: Provided is a method for reducing output data noise of a semiconductor apparatus which includes a plurality of output buffers to output data. The method includes the steps of: driving low data to a specific output buffer among the plurality of output buffers, and driving data transiting from a high level to a low level to the other output buffers; and measuring the magnitude of data noise occurring in output data of the specific output buffer, and deciding slew rates of the plurality of output buffers based on the measurement result.

Abstract translation: 提供了一种减少包括多个输出缓冲器以输出数据的半导体装置的输出数据噪声的方法。 该方法包括以下步骤：将低数据驱动到多个输出缓冲器中的特定输出缓冲器，以及驱动数据从高电平转移到低电平到另一个输出缓冲器; 以及测量在特定输出缓冲器的输出数据中发生的数据噪声的大小，以及基于测量结果确定多个输出缓冲器的转换速率。