FABRICATING METHOD OF SEMICONDUCTOR DEVICE
    1.
    发明申请
    FABRICATING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件制造方法

    公开(公告)号:US20170047309A1

    公开(公告)日:2017-02-16

    申请号:US15158921

    申请日:2016-05-19

    Abstract: A fabricating method of a semiconductor device, in which a first semiconductor chip having a desired first thickness and a semiconductor chip having a desired second thickness are used to fabricate a semiconductor device having a desired third thickness that is greater than the sum of the first and second thicknesses includes providing the first semiconductor chip, which has the first thickness, forming the second semiconductor chip, which is connected to the first semiconductor chip via through silicon vias (TSVs) and has the second thickness, on the first semiconductor chip, and providing a dummy semiconductor chip, which is not electrically connected to the semiconductor chip and has a fourth thickness, on the second semiconductor chip, wherein the fourth thickness is generated based on a difference between about the third thickness and about a sum of the first and second thicknesses.

    Abstract translation: 一种半导体器件的制造方法,其中使用具有期望的第一厚度的第一半导体芯片和具有期望的第二厚度的半导体芯片来制造具有期望的第三厚度的半导体器件,所述第三厚度大于第一和第二厚度之和的半导体器件, 第二厚度包括提供具有第一厚度的第一半导体芯片,形成第二半导体芯片,第二半导体芯片经由第一半导体芯片上的硅通孔(TSV)连接到第一半导体芯片并具有第二厚度,并且提供 在所述第二半导体芯片上未与所述半导体芯片电连接并具有第四厚度的虚设半导体芯片,其中所述第四厚度基于所述第三厚度和所述第一和第二厚度之和之间的差大小而产生 厚度

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