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公开(公告)号:US10243123B2
公开(公告)日:2019-03-26
申请号:US15705069
申请日:2017-09-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
IPC: H01L25/075 , H01L33/00 , H01L33/60 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/50 , H01L33/38 , H01L33/44
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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公开(公告)号:US20190221730A1
公开(公告)日:2019-07-18
申请号:US16361823
申请日:2019-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/50 , H01L33/502 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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公开(公告)号:US20180166424A1
公开(公告)日:2018-06-14
申请号:US15833495
申请日:2017-12-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung-hyun Sim , Yong-il Kim , Wan-tae Lim , Ji-hye Yeon , Ha-nul Yoo
CPC classification number: H01L25/0753 , H01L33/0079 , H01L33/22 , H01L33/44 , H01L33/483 , H01L33/504 , H01L33/505 , H01L33/54 , H01L33/60 , H01L33/62 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A light-emitting diode (LED) device includes a plurality of light-emitting structures spaced apart from each other; a plurality of electrode layers on first surfaces of the plurality of light-emitting structures, respectively; a protection layer on second surfaces of each of the plurality of light-emitting structures, respectively; a separation layer to electrically insulate the plurality of light-emitting structures from each other and electrically insulate the plurality of electrode layers from each other; a plurality of phosphor layers on second surfaces of the plurality of light-emitting structures, respectively, each of the plurality of the phosphor layers each to output a different color of light; and a partitioning layer between the phosphor layers and separating the plurality of phosphor layers from each other, the partitioning layer including a substrate structure, an insulation structure, or a metal structure.
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公开(公告)号:US10403608B2
公开(公告)日:2019-09-03
申请号:US15833495
申请日:2017-12-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung-hyun Sim , Yong-il Kim , Wan-tae Lim , Ji-hye Yeon , Ha-nul Yoo
IPC: H01L33/00 , H01L33/22 , H01L33/44 , H01L33/48 , H01L33/50 , H01L33/54 , H01L33/60 , H01L33/62 , H01L25/075
Abstract: A light-emitting diode (LED) device includes a plurality of light-emitting structures spaced apart from each other; a plurality of electrode layers on first surfaces of the plurality of light-emitting structures, respectively; a protection layer on second surfaces of each of the plurality of light-emitting structures, respectively; a separation layer to electrically insulate the plurality of light-emitting structures from each other and electrically insulate the plurality of electrode layers from each other; a plurality of phosphor layers on second surfaces of the plurality of light-emitting structures, respectively, each of the plurality of the phosphor layers each to output a different color of light; and a partitioning layer between the phosphor layers and separating the plurality of phosphor layers from each other, the partitioning layer including a substrate structure, an insulation structure, or a metal structure.
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公开(公告)号:US10734559B2
公开(公告)日:2020-08-04
申请号:US16361823
申请日:2019-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
IPC: H01L33/00 , H01L25/075 , H01L33/60 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/50 , H01L33/38 , H01L33/44
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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公开(公告)号:US09799809B2
公开(公告)日:2017-10-24
申请号:US15201384
申请日:2016-07-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
IPC: H01L33/00 , H01L25/00 , H01L33/60 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/50 , H01L33/38 , H01L25/075
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/50 , H01L33/502 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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