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公开(公告)号：US11239385B2
公开(公告)日：2022-02-01
申请号：US16844616
申请日：2020-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeonghwan Jang , Jae-Yoon Kim , Sungwon Ko , Junghee Kwak , Sangseok Lee , Suyeol Lee , Seungwan Chae , Pun Jae Choi
Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.
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Patent Agency Ranking
公开(公告)号：US10199551B2
公开(公告)日：2019-02-05
申请号：US15636084
申请日：2017-06-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taehun Kim , Jae-Yoon Kim , Youngkyu Sung , Gamham Yong , Dongyeoul Lee , Suyeol Lee
Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked. A connection electrode is positioned above the light-emitting structure. The connection electrode includes a connection metal layer electrically connected to at least one of the first and second semiconductor layers. A UBM pattern is on the connection electrode. A connection terminal is on the UBM pattern. The connection metal layer includes a first metal element. A heat conductivity of the first metal element is higher than that of gold (Au). The connection terminal includes a second metal element. A first reactivity of the first metal element with the second metal element is lower than a second reactivity of gold (Au) with the second metal element.
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公开(公告)号：US11658259B2
公开(公告)日：2023-05-23
申请号：US17589192
申请日：2022-01-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeonghwan Jang , Jae-Yoon Kim , Sungwon Ko , Junghee Kwak , Sangseok Lee , Suyeol Lee , Seungwan Chae , Pun Jae Choi
CPC classification number: H01L33/0016 , H01L33/24 , H01L33/405 , H01L33/62
Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.
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公开(公告)号：US12040349B2
公开(公告)日：2024-07-16
申请号：US17575088
申请日：2022-01-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiwon Park , Hyunsoo Kim , Jinsu Park , Suyeol Lee , Shiyoung Lee , Chiyoon Lee
CPC classification number: H01L27/156 , H01L24/02 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L2224/02381 , H01L2224/0239 , H01L2224/05554 , H01L2224/05569 , H01L2224/05573 , H01L2224/06153 , H01L2224/06155 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48105 , H01L2224/48228 , H01L2924/182
Abstract: A light emitting device includes a printed circuit board (PCB) including a connection pad, a base substrate mounted on the PCB and including a pixel region and a pad region, light emitting structures arranged on the pixel region, a barrier rib structure disposed on the pixel region and disposed at a vertical level different from the light emitting structures, the barrier rib structure including barrier ribs connected with each other to define each of pixel spaces, a phosphor layer filling each pixel space, a dam structure surrounding the barrier rib structure, a pad disposed on the pad region and adjacent to at least one side of an outer boundary of the light emitting structures, a bonding wire connecting the connection pad to the pad, and a molding structure covering the pad, the connection pad, the bonding wire, and at least a portion of the dam structure.
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公开(公告)号：US20220310694A1
公开(公告)日：2022-09-29
申请号：US17575088
申请日：2022-01-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiwon Park , Hyunsoo Kim , Jinsu Park , Suyeol Lee , Shiyoung Lee , Chiyoon Lee
IPC: H01L27/15
Abstract: A light emitting device includes a printed circuit board (PCB) including a connection pad, a base substrate mounted on the PCB and including a pixel region and a pad region, light emitting structures arranged on the pixel region, a barrier rib structure disposed on the pixel region and disposed at a vertical level different from the light emitting structures, the barrier rib structure including barrier ribs connected with each other to define each of pixel spaces, a phosphor layer filling each pixel space, a dam structure surrounding the barrier rib structure, a pad disposed on the pad region and adjacent to at least one side of an outer boundary of the light emitting structures, a bonding wire connecting the connection pad to the pad, and a molding structure covering the pad, the connection pad, the bonding wire, and at least a portion of the dam structure.
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公开(公告)号：US20180166618A1
公开(公告)日：2018-06-14
申请号：US15636084
申请日：2017-06-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： TAEHUN KIM , Jae-Yoon Kim , Youngkyu Sung , Gamham Yong , Dongyeoul Lee , Suyeol Lee
CPC classification number: H01L33/62 , H01L24/02 , H01L24/04 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L33/46 , H01L2224/02331 , H01L2224/02375 , H01L2224/02381 , H01L2224/0239 , H01L2224/0345 , H01L2224/0346 , H01L2224/03472 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05016 , H01L2224/05017 , H01L2224/0508 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05556 , H01L2224/05557 , H01L2224/05569 , H01L2224/05611 , H01L2224/05647 , H01L2224/05666 , H01L2224/05671 , H01L2224/05687 , H01L2224/06051 , H01L2224/10126 , H01L2224/11849 , H01L2224/13006 , H01L2224/13024 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/16227 , H01L2224/16245 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/12041 , H01L2933/0066 , H01L2924/00012 , H01L2924/00014 , H01L2924/01029 , H01L2924/054 , H01L2924/01028 , H01L2924/0536 , H01L2924/01024 , H01L2924/05341 , H01L2924/0544 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/0103 , H01L2924/01047 , H01L2924/01083 , H01L2924/01058 , H01L2924/01022 , H01L2924/01078 , H01L2924/01013
Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked. A connection electrode is positioned above the light-emitting structure. The connection electrode includes a connection metal layer electrically connected to at least one of the first and second semiconductor layers. A UBM pattern is on the connection electrode. A connection terminal is on the UBM pattern. The connection metal layer includes a first metal element. A heat conductivity of the first metal element is higher than that of gold (Au). The connection terminal includes a second metal element. A first reactivity of the first metal element with the second metal element is lower than a second reactivity of gold (Au) with the second metal element.
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