公开(公告)号：US20040136049A1

公开(公告)日：2004-07-15

申请号：US10690537

申请日：2003-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-ho Cho ,  Hyung-jae Shin ,  Woon-bae Kim

IPC: C23F001/00

CPC classification number: G02B26/0841 ,  B81B3/0005 ,  B81B2201/042 ,  B81C1/0096 ,  B81C2201/112

Abstract: The micro-mechanical structure includes an anti-stiction layer formed by plasma enhanced chemical vapor deposition and plasma etching. The anti-stiction layer is selectively formed on only the area of a substrate other than the top of a movable structure and a part of an electrode that is subsequently bonded to a wire.

Abstract translation: 微机械结构包括通过等离子体增强化学气相沉积和等离子体蚀刻形成的抗静电层。 抗静电层仅选择性地形成在除了可移动结构的顶部之外的基底的区域和随后结合到线的电极的一部分上。

公开(公告)号：US20030104651A1

公开(公告)日：2003-06-05

申请号：US10293933

申请日：2002-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woon-bae Kim ,  Hyung-jae Shin ,  Chang-ho Cho ,  Seung-goo Kang

IPC: H01L021/00 ,  H01L021/48 ,  H01L021/50 ,  H01L021/44 ,  H01L023/12

CPC classification number: B81C1/00269 ,  H01L21/50 ,  H01L23/10 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/163 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49789 ,  Y10T29/49794 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A hermetic sealing method, which is capable of preventing oxidation of a micro-electromechanical system (MEMS) and sealing the MEMS at a low temperature. A low temperature hermetic sealing method having a passivation layer includes depositing a junction layer, a wetting layer, and a solder layer on a prepared lid frame, depositing a first protection layer for preventing oxidation on the solder layer and forming a lid, preparing a package base on which a device is disposed, and in which a metal layer and a second protection layer are formed around the device, and assembling the lid and the package base, heating, and sealing them. The protection layer is laminated on the solder layer that is formed by the lid, thereby preventing oxidation without using a flux. The low temperature hermetic sealing method having a passivation layer is suitable for sealing a device, such as the MEMS, which is sensitive to heat, water and other by-products.

Abstract translation: 一种气密密封方法，其能够防止微机电系统（MEMS）的氧化并且在低温下密封MEMS。 具有钝化层的低温气密密封方法包括在准备的盖框架上沉积接合层，润湿层和焊料层，在焊料层上沉积防止氧化的第一保护层并形成盖子，制备封装 在其上设置器件，并且在器件周围形成金属层和第二保护层，并且组装盖子和封装基座，加热和密封它们。 保护层层压在由盖形成的焊料层上，从而防止氧化而不使用焊剂。 具有钝化层的低温气密密封方法适用于密封对热，水等副产物敏感的MEMS等装置。

公开(公告)号：US20030099028A1

公开(公告)日：2003-05-29

申请号：US10151011

申请日：2002-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-ho Cho ,  Hyung-jae Shin ,  Woon-bae Kim

IPC: G02F001/29 ,  G02B026/08

CPC classification number: G02B26/0841 ,  B81B3/0005 ,  B81B2201/042 ,  B81C1/0096 ,  B81C2201/112

Abstract: The micro-mechanical structure includes an anti-stiction layer formed by plasma enhanced chemical vapor deposition. The anti-stiction layer is formed on only the area of a substrate other than the top of a movable structure and a part of an electrode that is subsequently bonded to a wire.

Abstract translation: 微机械结构包括通过等离子体增强化学气相沉积形成的抗静电层。 抗静电层仅形成在除了可移动结构的顶部之外的基底的区域和随后结合到线的电极的一部分上。

公开(公告)号：US20020113296A1

公开(公告)日：2002-08-22

申请号：US09984734

申请日：2001-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-ho Cho ,  Hyung-jae Shin ,  Woon-bae Kim

IPC: H01L021/44 ,  H01L023/552

CPC classification number: H01L23/10 ,  B81B7/0077 ,  B81C1/00269 ,  B81C1/00357 ,  B81C2201/019 ,  H01L21/50 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48227 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/16235 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A device that is hermetically sealed at a wafer level or a method of hermetically sealing a device, which is sensitive to high temperatures or affected by heating cycles. Semiconductor devices are formed on a wafer. A lid wafer is formed. Adhesives are formed in a predetermined position over the wafer and/or the lid wafer. The wafer and the lid wafer are sealed by the adhesives at the wafer level. The sealing may be performed at a low temperature using a solder to protect the devices sensitive to heat. The sealed devices are diced into individual chips. In the wafer level hermetic sealing method, a sawing operation is performed after the devices are sealed. Therefore, the overall processing time is reduced, devices are protected from the effects of moisture or particles, and devices having a moving structure, such as MEMS devices, are more easily handled.

Abstract translation: 在晶片级气密密封的装置或密封装置的方法，其对高温敏感或受加热循环影响。 半导体器件形成在晶片上。 形成盖子晶片。 粘合剂形成在晶片和/或盖晶片上的预定位置。 晶片和盖晶片在晶片级被粘合剂密封。 可以使用焊料在低温下进行密封以保护对热敏感的装置。 将密封的装置切成单独的芯片。 在晶片级密封方法中，在密封装置之后进行锯切操作。 因此，总体处理时间减少，防止装置受潮湿或微粒的影响，并且具有诸如MEMS装置的移动结构的装置更容易处理。