Abstract:
Disclosed is an encryption method and apparatus. The encryption method using homomorphic encryption may include generating a ciphertext by encrypting data, and bootstrapping the ciphertext by performing a modular reduction based on a selection of one or more target points for a modulus corresponding to the ciphertext.
Abstract:
A memory device includes memory cell array including a plurality of memory cells that store data, a first transmitter that transmits the data to an external device through a first data line, and a ZQ controller that performs a ZQ calibration operation to generate a first ZQ code for impedance matching of the first data line. The first transmitter encodes the first ZQ code and the first data based on a first clock and drives the first data line based on the encoded result based on a second clock.
Abstract:
Provided is a method of detecting a concentrated address of a semiconductor device using an n-bit address. The method includes dividing the n-bit address into k groups, wherein each of n and k is an integer equal to or greater than 2, for each group of the k groups, detecting one or more concentrated sub addresses corresponding to the group, and generating at least one concentrated address by combining the one or more concentrated sub addresses for the k groups.
Abstract:
An encryption method and apparatus based on homomorphic encryption using an odd function property. The encryption method includes generating a ciphertext by encrypting data, and bootstrapping the ciphertext by performing a modular reduction based on an odd function property for a modulus corresponding to the ciphertext.
Abstract:
An aligning guide, a semiconductor package comprising an aligning guide, and a method of manufacturing a semiconductor package comprising an aligning guide are provided. The semiconductor package may comprise a circuit board and an aligning guide mounted on the circuit board. The aligning guide may have a plurality of stepped portions. A plurality of semiconductor chips may be stacked on the circuit board and engage with the stepped portions of the aligning guide. According to the disclosed semiconductor package, a large number of semiconductor chips may be stacked with high accuracy and sufficient margin. Therefore, the rate of failure and defects in the chip stacking process may be reduced and the reliability and stability of the semiconductor package may be enhanced.
Abstract:
A processor-implemented method with homomorphic encryption includes: receiving a first ciphertext corresponding to a first modulus; generating a second ciphertext corresponding to a second modulus by performing modulus raising on the first ciphertext; and performing bootstrapping by encoding the second ciphertext using a commutative property and an associative property of operations included in a rotation operation.
Abstract:
A processor-implemented method with homomorphic encryption includes: receiving a first ciphertext corresponding to a first modulus; generating a second ciphertext corresponding to a second modulus by performing modulus raising on the first ciphertext; and performing bootstrapping by encoding the second ciphertext using a commutative property and an associative property of operations included in a rotation operation.
Abstract:
An error detection code generation circuit of a semiconductor device includes a first cyclic redundancy check (CRC) engine, a second CRC engine and an output selection engine. The first CRC engine generates first error detection code bits using a first generation matrix, based on a plurality of first unit data and first DBI bits in response to a mode signal. The second CRC engine generates second error detection code bits using a second generation matrix, based on a plurality second unit data and second DBI bits, in response to the mode signal. The output selection engine generates final error detection code bits by merging the first error detection code bits and the second error detection code bits in response to the mode signal. The first generation matrix is the same as the second generation matrix.
Abstract:
A memory system for performing a recovery operation is provided. A memory system includes a memory device including a plurality of memory cells constituting a plurality of sub-sets, and a memory controller for controlling the memory device. The memory controller controls the memory device to manage a read count indicating a number of read operations performed by the memory device for each of the plurality of sub-sets, and to perform a recovery operation on a sub-set, among the plurality of sub-sets, based on the read count corresponding to the read count. Each of a plurality of sub-sets includes a plurality of pages. Each of the plurality of pages is a unit in which a read operation is performed in the plurality of memory cells.
Abstract:
An error detection code generation circuit of a semiconductor device includes a first cyclic redundancy check (CRC) engine, a second CRC engine and an output selection engine. The first CRC engine generates first error detection code bits using a first generation matrix, based on a plurality of first unit data and first DBI bits in response to a mode signal. The second CRC engine generates second error detection code bits using a second generation matrix, based on a plurality second unit data and second DBI bits, in response to the mode signal. The output selection engine generates final error detection code bits by merging the first error detection code bits and the second error detection code bits in response to the mode signal. The first generation matrix is the same as the second generation matrix.