Golf putter
    1.
    发明授权
    Golf putter 有权
    高尔夫推杆

    公开(公告)号:US09272193B1

    公开(公告)日:2016-03-01

    申请号:US14471943

    申请日:2014-08-28

    Applicant: Hyung Jin Yim

    Inventor: Hyung Jin Yim

    Abstract: The golf putter is configured such that the stop step of the rotary linkage is formed outwardly in an extended length to cause the lock screws to stop the rotary linkage from being rotated with a large torque at a position remote from the center of the threaded axle hole, so that when a user does not desire to change the lie angle in use, the adjusted lie angle is not changed for a long period of time.

    Abstract translation: 高尔夫推杆构造成使得旋转连杆的停止步骤在延伸的长度上向外形成,以使得锁定螺钉停止旋转联动装置在远离螺纹轴孔的中心的位置以大的扭矩旋转 使得当用户不希望改变使用中的躺角时,调节后的角度长时间不变化。

    Method for fabricating through substrate vias in semiconductor substrate
    2.
    发明授权
    Method for fabricating through substrate vias in semiconductor substrate 有权
    在半导体衬底中通过衬底通孔制造的方法

    公开(公告)号:US08383460B1

    公开(公告)日:2013-02-26

    申请号:US13243502

    申请日:2011-09-23

    Applicant: Myung Jin Yim

    Inventor: Myung Jin Yim

    Abstract: Methods are provided for fabricating integrated circuit systems that include forming integrated circuits in and on a semiconductor substrate. Via holes are etched into a front surface of the semiconductor substrate and are filled with a conductive material. A carrier wafer having a layer of adhesive thereon is provided and an imprinted pattern is formed in the layer of adhesive. The front surface of the semiconductor substrate is bonded to the carrier wafer with the patterned layer of adhesive. A portion of a back surface of the semiconductor substrate is removed to expose a portion of the conductive material and the thinned back surface is attached to a second substrate. The semiconductor substrate is then de-bonded from the carrier wafer.

    Abstract translation: 提供了用于制造集成电路系统的方法,其包括在半导体衬底中以及半导体衬底上形成集成电路。 通孔蚀刻到半导体衬底的前表面并填充有导电材料。 提供其上具有粘合剂层的载体晶片,并且在粘合剂层中形成印刷图案。 半导体衬底的前表面与图案化的粘合剂层结合到载体晶片。 半导体衬底的后表面的一部分被去除以暴露导电材料的一部分,并且减薄的背表面附着到第二衬底。 然后将半导体衬底从载体晶片脱粘合。

    CMOS image sensor module with wafers
    5.
    发明授权
    CMOS image sensor module with wafers 有权
    具有晶圆的CMOS图像传感器模块

    公开(公告)号:US07446384B2

    公开(公告)日:2008-11-04

    申请号:US11395157

    申请日:2006-04-03

    Abstract: The present invention relates to an image sensor module and a manufacturing method thereof, especially to a wafer level chip size package (WL-CSP) realized by directly contacting an image sensor chip wafer to a glass wafer on which an IR filter coating layer is deposited, an electrode rearrangement and a dicing process, a miniaturized image sensor module using this wafer level chip size package (WL-CSP) and a method thereof. The CMOS image sensor module using a wafer level chip size package technology according to the present invention comprises: an image sensor chip wafer having a partition with a lattice structure formed at portions except an image sensing area; and a glass wafer with an IR filter coating layer and a metal electrode; and wherein the image sensor chip wafer and the glass wafer form an electric contact and a chip sealing by a flip-chip bonding; and wherein a solder bump and a non solder bump are formed after a metal wiring is rearranged on a lower surface of the glass wafer. According to the present invention, it is possible to realize a cheap wafer level chip size package (WL-CSP) using the existing wafer processing and the metal deposition processing equipments. Further, an image sensor module with smaller thickness and area than the existing CSP package can be realized. Moreover, an image sensor module with a smaller area than the existing COG package can be realized.

    Abstract translation: 图像传感器模块及其制造方法技术领域本发明涉及一种图像传感器模块及其制造方法,特别涉及通过将图像传感器芯片晶片直接接触到其上沉积有IR滤光器涂层的玻璃晶片实现的晶片级芯片尺寸封装(WL-CSP) ,电极重排和切割处理,使用该晶片级芯片尺寸封装(WL-CSP)的小型化图像传感器模块及其方法。 使用根据本发明的晶片级芯片尺寸封装技术的CMOS图像传感器模块包括:图像传感器芯片晶片,具有形成在除了图像感测区域之外的部分处的格子结构的分隔; 和具有IR滤光器涂层和金属电极的玻璃晶片; 并且其中所述图像传感器芯片晶片和所述玻璃晶片通过倒装芯片接合形成电接触和芯片密封; 并且其中在金属布线重新布置在玻璃晶片的下表面上之后形成焊料凸块和非焊料凸块。 根据本发明,可以使用现有的晶片处理和金属沉积处理设备来实现廉价的晶片级芯片尺寸封装(WL-CSP)。 此外,可以实现具有比现有CSP封装更小的厚度和面积的图像传感器模块。 此外,可以实现具有比现有COG封装小的面积的图像传感器模块。

    Porous low-dielectric constant (k) thin film with controlled solvent diffusion
    6.
    发明申请
    Porous low-dielectric constant (k) thin film with controlled solvent diffusion 审中-公开
    具有受控溶剂扩散的多孔低介电常数(k)薄膜

    公开(公告)号:US20060135633A1

    公开(公告)日:2006-06-22

    申请号:US11263867

    申请日:2005-11-02

    Applicant: Kwang Lee Jin Yim

    Inventor: Kwang Lee Jin Yim

    CPC classification number: C08J5/18 C08J2383/04 C08J2383/14 H01B3/441

    Abstract: A porous low-dielectric constant thin film with controlled solvent diffusion into pores of the porous thin film. The porous thin film i s formed from a composition including a porogen containing at least one π-π interacting functional group, a thermostable matrix precursor, and a solvent dissolving the porogen and the matrix precursor. The porous thin film thus formed has mesopores not smaller than 10 nm in size and has a solvent diffusion rate not higher than 30 μm2/sec. Due to the presence of the large pores, the porous thin film can greatly inhibit solvent diffusion into the pores of the thin film, which is encountered during wet processes, without substantial changes in dielectric constant, elastic modulus and hardness depending on the porosity of the thin film.

    Abstract translation: 多孔低介电常数薄膜,其具有控制的溶剂扩散到多孔薄膜的孔中。 由包含至少一个π-π相互作用官能团的致孔剂的组合物形成多孔薄膜,热稳定性基质前体和溶解致孔剂和基质前体的溶剂。 由此形成的多孔薄膜的中孔的尺寸不小于10nm,溶剂扩散速率不高于30μm2 / sec。 由于存在大的孔,多孔薄膜可以极大地抑制在湿法中遇到的溶剂扩散到薄膜的孔中,而介电常数,弹性模量和硬度几乎不变,这取决于 薄膜。

    Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer
    7.
    发明申请
    Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer 有权
    多官能直链硅氧烷化合物,由该化合物制备的硅氧烷聚合物,以及通过使用聚合物形成电介质膜的方法

    公开(公告)号:US20050131190A1

    公开(公告)日:2005-06-16

    申请号:US10868222

    申请日:2004-06-16

    CPC classification number: C08G77/50 C07F7/0838 C07F7/1804

    Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiO2 content, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.

    Abstract translation: 新型多功能直链硅氧烷化合物,由硅氧烷化合物制备的硅氧烷聚合物,以及通过使用硅氧烷聚合物形成电介质膜的方法。 线性硅氧烷聚合物具有增强的机械性能(例如模量),优异的热稳定性,低碳含量和低吸湿性,并且通过直链硅氧烷化合物的均聚或线性硅氧烷化合物与另一单体的共聚制备。 可以通过热固化含有高反应性的硅氧烷聚合物的涂布溶液来制造电介质膜。 由硅氧烷化合物制备的硅氧烷聚合物不仅具有令人满意的机械性能,热稳定性和抗裂性,而且具有低吸湿性和与成孔材料的优异相容性,导致低的介电常数。 此外,硅氧烷聚合物保持相对低的碳含量,但具有高的SiO 2含量,从而改善了对半导体器件的适用性。 因此,硅氧烷聚合物有利地用作半导体器件的介电膜的材料。

Patent Agency Ranking