公开(公告)号：US07342364B2

公开(公告)日：2008-03-11

申请号：US11226373

申请日：2005-09-15

申请人： Satoru Kato ,  Tetsu Kachi ,  Kazuyoshi Tomita ,  Hiroshi Ito ,  Masanori Kojima

发明人： Satoru Kato ,  Tetsu Kachi ,  Kazuyoshi Tomita ,  Hiroshi Ito ,  Masanori Kojima

IPC分类号： H05B37/00

CPC分类号： H05B33/0845 ,  B82Y20/00 ,  H01S5/34333 ,  H05B33/0818 ,  Y02B20/346

摘要： A light source comprising a light emitting diode comprising a GaN-based compound and having a single quantum well structure, and a driving voltage source for applying a pulse voltage to the light emitting diode, wherein a voltage at a low level of the pulse voltage is set to a voltage lower than a voltage at which a fall time of the light emitting diode is made the longest.

摘要翻译： 一种光源，包括包含GaN基化合物并且具有单量子阱结构的发光二极管，以及用于向所述发光二极管施加脉冲电压的驱动电压源，其中所述脉冲电压为低电平的电压为 设定为低于发光二极管的下降时间最长的电压的电压。

公开(公告)号：US20060061302A1

公开(公告)日：2006-03-23

申请号：US11226373

申请日：2005-09-15

申请人： Satoru Kato ,  Tetsu Kachi ,  Kazuyoshi Tomita ,  Hiroshi Ito ,  Masanori Kojima

发明人： Satoru Kato ,  Tetsu Kachi ,  Kazuyoshi Tomita ,  Hiroshi Ito ,  Masanori Kojima

IPC分类号： H05B41/36

CPC分类号： H05B33/0845 ,  B82Y20/00 ,  H01S5/34333 ,  H05B33/0818 ,  Y02B20/346

摘要： A light source comprising a light emitting diode comprising a GaN-based compound and having a single quantum well structure, and a driving voltage source for applying a pulse voltage to the light emitting diode, wherein a voltage at a low level of the pulse voltage is set to a voltage lower than a voltage at which a fall time of the light emitting diode is made the longest.

摘要翻译： 一种光源，包括包含GaN基化合物并且具有单量子阱结构的发光二极管，以及用于向所述发光二极管施加脉冲电压的驱动电压源，其中所述脉冲电压为低电平的电压为 设定为低于发光二极管的下降时间最长的电压的电压。

公开(公告)号：US06649943B2

公开(公告)日：2003-11-18

申请号：US10163088

申请日：2002-06-06

申请人： Naoki Shibata ,  Takahiro Kozawa ,  Kazuyoshi Tomita ,  Tetsu Kachi

发明人： Naoki Shibata ,  Takahiro Kozawa ,  Kazuyoshi Tomita ,  Tetsu Kachi

IPC分类号： H01L310328

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014

摘要： Disclosed is a Group III nitride compound semiconductor light-emitting element formed of Group III nitride compound semiconductor layers, including a multi-layer containing light-emitting layers; a p-type semiconductor layer; and an n-type semiconductor layer, wherein the multi-layer includes a multiple quantum barrier-well layer containing quantum-barrier-formation barrier layers formed from a Group III nitride compound semiconductor and quantum-barrier-formation well layers formed from a Group III nitride compound semiconductor, the barrier layers and the well layers being laminated alternately and cyclically, and a plurality of low-energy-band-gap layers which emit light of different wavelengths; and the multiple quantum barrier-well layer is provided between the low-energy-band-gap layers.

摘要翻译： 公开了由包含多层含有发光层的III族氮化物化合物半导体层形成的III族氮化物化合物半导体发光元件; p型半导体层; 和n型半导体层，其中所述多层包括由III族氮化物化合物半导体形成的量子势垒形成阻挡层和由III族形成的量子势垒形成阱层的多量子势垒阱层 氮化物化合物半导体，阻挡层和阱层交替地和循环地层叠，以及发射不同波长的光的多个低能带隙层; 并且在低能带隙层之间设置多量子势阱层。

公开(公告)号：US5889806A

公开(公告)日：1999-03-30

申请号：US908938

申请日：1997-08-08

申请人： Seiji Nagai ,  Shiro Yamasaki ,  Masayoshi Koike ,  Kazuyoshi Tomita ,  Tetsu Kachi ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Seiji Nagai ,  Shiro Yamasaki ,  Masayoshi Koike ,  Kazuyoshi Tomita ,  Tetsu Kachi ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/343 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/34333

摘要： A laser diode using Group III nitride compound semiconductor consists of In.sub.0.2 Ga.sub.0.8 N/GaN SQW active layer 5, a pair of GaN guide layers 41 and 62, sandwiching the active layer with wider forbidden band than the active layer, and a pair of Al.sub.0.08 Ga.sub.0.92 N cladding layer 4 and 71, sandwiching a pair of the guide layers, and the LD confines carriers and light separately. Al.sub.0.15 Ga.sub.0.75 N stopper layers 41 and 62 with wider forbidden band than the guide layers are formed in some portion of each of the guide layers 41 and 62 in parallel to the active layer. As a result, carriers are confined in the active layer and the laser output of the LD is improved.

摘要翻译： 使用III族氮化物化合物半导体的激光二极管由In0.2Ga0.8N / GaN SQW有源层5，一对GaN引导层41和62组成，其中活性层具有比有源层更宽的禁带，以及一对 Al0.08Ga0.92N包覆层4和71夹着一对引导层，LD分别限制载流子和光。 每个引导层41和62的一部分平行于有源层形成具有比引导层更宽的禁带宽度的Al 0.15 Ga 0.75 N阻挡层41和62。 结果，载流子被限制在有源层中，并且LD的激光输出被改善。

公开(公告)号：US07897987B2

公开(公告)日：2011-03-01

申请号：US12382040

申请日：2009-03-06

申请人： Mitsuhiro Inoue ,  Kenji Ito ,  Kazuyohi Tomita ,  Tetsu Kachi ,  Takahiro Kozawa ,  Satoru Kato ,  Tadashi Ichikawa

发明人： Mitsuhiro Inoue ,  Kenji Ito ,  Kazuyohi Tomita ,  Tetsu Kachi ,  Takahiro Kozawa ,  Satoru Kato ,  Tadashi Ichikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/504 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light-emitting device includes a light-emitting diode, a red light-emitting phosphor layer, a yellow light-emitting phosphor layer, and a blue light-emitting phosphor layer. These layers are stacked in the stacking sequence of the yellow, blue, and red phosphor layers in order of increasing distance from the LED. The stacking sequence of the yellow and blue phosphor layers is first determined in such a manner that these layers do not interact with each other. The stacking sequence of the red and yellow phosphor layers and the stacking sequence of the red and blue phosphor layers are determined by the discriminant D. This determination of the stacking sequence suppresses a reduction in the conversion efficiency of the phosphors due to concentration quenching, improving the emission efficiency of the light-emitting device.

摘要翻译： 发光装置包括发光二极管，红色发光荧光体层，黄色发光荧光体层和蓝色发光荧光体层。 这些层按照与LED的距离增加的顺序堆叠在黄色，蓝色和红色荧光体层的堆叠顺序中。 首先以这样的方式确定黄色和蓝色磷光体层的堆叠顺序，使得这些层彼此不相互作用。 红色和黄色荧光体层的堆叠顺序和红色和蓝色荧光体层的堆叠序列由判别式D确定。堆积顺序的确定抑制了由于浓度淬灭引起的荧光体的转换效率的降低，改进 发光装置的发光效率。

公开(公告)号：US20090242917A1

公开(公告)日：2009-10-01

申请号：US12382040

申请日：2009-03-06

申请人： Mitsuhiro Inoue ,  Kenji Ito ,  Kazuyohi Tomita ,  Tetsu Kachi ,  Takahiro Kozawa ,  Satoru Kato ,  Tadashi Ichikawa

发明人： Mitsuhiro Inoue ,  Kenji Ito ,  Kazuyohi Tomita ,  Tetsu Kachi ,  Takahiro Kozawa ,  Satoru Kato ,  Tadashi Ichikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/504 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light-emitting device includes a light-emitting diode, a red light-emitting phosphor layer, a yellow light-emitting phosphor layer, and a blue light-emitting phosphor layer. These layers are stacked in the stacking sequence of the yellow, blue, and red phosphor layers in order of increasing distance from the LED. The stacking sequence of the yellow and blue phosphor layers is first determined in such a manner that these layers do not interact with each other. The stacking sequence of the red and yellow phosphor layers and the stacking sequence of the red and blue phosphor layers are determined by the discriminant D. This determination of the stacking sequence suppresses a reduction in the conversion efficiency of the phosphors due to concentration quenching, improving the emission efficiency of the light-emitting device.

摘要翻译： 发光装置包括发光二极管，红色发光荧光体层，黄色发光荧光体层和蓝色发光荧光体层。 这些层按照与LED的距离增加的顺序堆叠在黄色，蓝色和红色荧光体层的堆叠顺序中。 首先以这样的方式确定黄色和蓝色磷光体层的堆叠顺序，使得这些层彼此不相互作用。 红色和黄色荧光体层的堆叠顺序和红色和蓝色荧光体层的堆叠序列由判别式D确定。堆积顺序的确定抑制了由于浓度淬灭引起的荧光体的转换效率的降低，改进 发光装置的发光效率。

公开(公告)号：US07084432B2

公开(公告)日：2006-08-01

申请号：US10617655

申请日：2003-07-14

申请人： Tetsu Kachi ,  Satoru Kato

发明人： Tetsu Kachi ,  Satoru Kato

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/20 ,  H01L33/32

摘要： An increased proportion of light projected from a nitride semiconductor light emitting diode enters the area within a specified angle.The nitride semiconductor light emitting diode is provided with an active layer 32 consisting of a nitride semiconductor, and a light projecting face 21. A reflecting mirror 38 is formed only on a side of the active layer 32 opposite the light projecting face 21. The reflecting mirror 38 is formed at a location from the center of the active layer 32 approximately (k·λ/2+λ/4)/n (where λ is the wavelength of light projected from the active layer 32, n is the mean refractive index of an area between the active layer 32 and the reflecting mirror 38, and k is an integer). This light emitting diode allows directivity to be increased sufficiently, and the coupling efficiency thereof with optical fiber consisting of POF or the like can be improved.

摘要翻译： 从氮化物半导体发光二极管投射的光的增加的比例在特定角度内进入该区域。 氮化物半导体发光二极管设置有由氮化物半导体和光投射面21组成的有源层32.反射镜38仅形成在与光投射面21相对的有源层32的一侧。反射镜 反射镜38形成在距离有源层32的中心大约（kλ/ 2 +λ/ 4）/ n的位置处（其中λ是从有源层32投影的光的波长，n是平均折射率 是活性层32和反射镜38之间的区域，k是整数）。 该发光二极管可以使指向性得到充分的提高，并且可以提高由POF等构成的光纤的耦合效率。

公开(公告)号：US20080090395A1

公开(公告)日：2008-04-17

申请号：US11902087

申请日：2007-09-19

申请人： Masahiro Sugimoto ,  Masakazu Kanechika ,  Daigo Kikuta ,  Osamu Ishiguro ,  Tsutomu Uesugi ,  Tetsu Kachi

发明人： Masahiro Sugimoto ,  Masakazu Kanechika ,  Daigo Kikuta ,  Osamu Ishiguro ,  Tsutomu Uesugi ,  Tetsu Kachi

IPC分类号： H01L21/225

CPC分类号： H01L21/2258 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/7828 ,  H01L29/808 ,  H01L29/861 ,  H01L33/325

摘要： The present invention provides a p-type group III nitride semiconductor production method which is excellent in terms of reliability and reproducibility. A photoresist mask is formed on a surface of an n−-GaN layer. Subsequently, an Mg film is formed so as to cover the n−-GaN layer and the photoresist mask, and an Ni/Pt metal film is formed on the Mg film. Thereafter, the photoresist mask is removed, whereby the Mg film and the metal film remain only on a portion of the n−-GaN layer where a p-type region is formed. Subsequently, when thermal treatment is performed in an ammonia atmosphere at 900° C. for three hours, Mg is diffused in the n−-GaN layer while being activated. Therefore, a p-type region is formed. Thereafter, the Mg film and the metal film are removed by use of aqua regia.

摘要翻译： 本发明提供了可靠性和再现性优异的p型III族氮化物半导体制造方法。 光刻胶掩模形成在n + O-GaN层的表面上。 随后，形成Mg膜，以覆盖n + SUP-GaN层和光致抗蚀剂掩模，并且在Mg膜上形成Ni / Pt金属膜。 此后，除去光致抗蚀剂掩模，由此Mg膜和金属膜仅保留在形成p型区域的n + O - GaN层的一部分上。 随后，当在900℃的氨气氛中进行3小时的热处理时，Mg在被激活的同时在n + SUP-GaN层中扩散。 因此，形成p型区域。 此后，通过使用王水去除Mg膜和金属膜。

公开(公告)号：US20050133799A1

公开(公告)日：2005-06-23

申请号：US11034261

申请日：2005-01-13

申请人： Toshiya Uemura ,  Naohisa Nagasaka ,  Masaki Hashimura ,  Atsuo Hirano ,  Hiroshi Tadano ,  Tetsu Kachi ,  Hideki Hosokawa

发明人： Toshiya Uemura ,  Naohisa Nagasaka ,  Masaki Hashimura ,  Atsuo Hirano ,  Hiroshi Tadano ,  Tetsu Kachi ,  Hideki Hosokawa

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L33/60 ,  H01L21/00 ,  H01L27/10 ,  H01L27/15 ,  H01L29/26 ,  H01L29/74 ,  H01L31/12

CPC分类号： H01L33/46 ,  H01L33/0095 ,  H01L33/32

摘要： A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

公开(公告)号：US08188514B2

公开(公告)日：2012-05-29

申请号：US12540230

申请日：2009-08-12

申请人： Masahiro Sugimoto ,  Tat-Sing Paul Chow ,  Zhongda Li ,  Tetsu Kachi ,  Tsutomu Uesugi

发明人： Masahiro Sugimoto ,  Tat-Sing Paul Chow ,  Zhongda Li ,  Tetsu Kachi ,  Tsutomu Uesugi

IPC分类号： H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/0642 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/4232 ,  H01L29/42368 ,  H01L29/66462 ,  H01L29/7788

摘要： An HEMT type transistor is disclosed that is a normally off type, and in which variations in the gate threshold voltage are small. A transistor is provided with a p-type region, a barrier region, an insulation film, a gate electrode. The channel region is connected to an upper surface of the p-type region. The channel region is n-type or i-type and provided with a first channel region and a second channel region. The barrier region is forming a hetero-junction with an upper surface of the first channel region. The insulation film is connected to an upper surface of the second channel region and an upper surface of the barrier region. The gate electrode faces the second channel region and the barrier region via the insulation film. The first channel region and the second channel region are arranged in series in a current pathway.

摘要翻译： 公开了一种HEMT型晶体管，其是常闭型，栅极阈值电压的变化小。 晶体管设置有p型区域，势垒区域，绝缘膜，栅极电极。 沟道区域连接到p型区域的上表面。 通道区域是n型或i型，并且设置有第一通道区域和第二通道区域。 阻挡区域与第一通道区域的上表面形成异质结。 绝缘膜连接到第二通道区域的上表面和阻挡区域的上表面。 栅电极经由绝缘膜面向第二沟道区和阻挡区。 第一通道区域和第二通道区域在电流通路中串联布置。